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微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221

TensorFlow 1.x Deep Learning Cookbook 原版电子书+配套代码！

1stOpt最全中文教程，1stOpt内含多种优化算法，并带有全局优化算法，速度较一般算法具有质的飞跃，对于科研中的数据拟合等研究领域具有重要的应用；此中文教程全面，详细，是一份不可多得的好资料

瑞萨的can的资料CAN的入门书，很好的学习资料，RENESAS应用手册是什么?是的缩写(以下称为),是国际标准化的串行通信协议。在当前的汽车产业中,出于对安全性、舒适性、方便性、低公害、低成本的要求,各种各样的电子控制系统被开发了出来。巾于这些系统之间通信所用的数据类型及对可靠性的要求不尽相同,巾多条总线构成的情况很多,线束的数量也随之增加。为适应“诚少线束的数量”、“通过多个,进行大量数据的高速通信”的需要牛德国电气商博世公司开发出面向汽车的通信协议。此后,通过及行了标准化,现在在欢洲已是汽车网络的标准协议。现在,的高性能和可靠性已被认同,并被广泛地应用于工业自动化、船舶、医疗设备、工业设备等方面。图是车载网终的构想示意图。等通信协议的开发,使多种通过网关进行数据交换得以实现。马达马达。。马达开关开关。安全画乘客检测空调子网车门雷达且且且子网白线检测伙表级遥控车身部自逗应引爆管巡航前大灯窗电动组合灯网关囊控制发动机胎压部信息部MCcD音视频父通信电子防发动机转向制动子网碟盒息导航盗系统动变底盘部故障诊断部(规格)诊断工具图车载网络构想注】国际标准化组织为戴姆勒克莱斯勒公司注册商标。RENESAS应用手册的应用示例图为的应用示例图的应用示例ENESAS应用手册总线拓扑图控制器根据两根线上的电位差来判断总线电平。总线电平分为显性电平和隐性电平,者必居其一。发送方通过使总线电平发生变化,将消息发送给接收方。图是的连接小意图收发器收发器连接图R∈NEs∧s应用手册的特点协议只有以下特点多主控制在总线空闲吋,所有的单元都可开始发送消息(多主控制)最先访问总线的单元可获得发送权(方式)。多个单元同时开始发送时,发送高优先级消息的单元可获得发送权。消息的发送在协议中,所有的消息都以固定的柊式发送。总线空闲时,所有与总线相连的单元都可以开始发送新消息。两个以上的单元同时开始发送消息时,根据标识符(以下称为)决定优先级。并不是表示发送的目的地址,而是表示访问总线的消息的优先级。两个以上的单元同时开始发送消息时,对各消息的每个位进行逐个仲裁比较。仲裁获胜(被判定为优先级最扃)的单元可继续发送消息,仲裁失利的单元则立刻停止发送而进行接收工作。系统的柔软性与总线相连的单元没有类似于“地址”的信息。因此在总线上增加单元时,连接在总线上的其它单元的软硬件及应用层都不需要改变通信速度根据整个网络的规模,可设定适合的通信速度。在同一网络中,所冇单元必须改定成统一的通信速度。即使有一个单元的通信速度与其它的不一样,此单元也会输岀错误信号,妨碍整个网络的通信。不同网终间则可以有不同的通信速度。远程数据请求可通过发送“遥控帧”请求其他单元发送数据。错误检测功能·错误通知功能·错误恢复功能所有的单元都可以检测错误(错误检测功能)。检测出错误的单元会立即同时通知其他所有单元(错误通知功能)正在发送消息的单元一旦检测出错误,会强制结東当前的发送。强制结束发送的单元会不断反复地重新发送此消息直到成功发送为止(错误恢复功能)。故障封闭可以判断出错误的类型是总线上暂时的数据错误(如外部噪声等)还是持续的效据错误(如单元内部改障、驱动器故障、断线等)。由此功能,当总线上发生持续数据错误时,可将引起此故障的单元从总线上隔离出去。连接总线是可同时连接多个单元的总线。可连接的单元总数理论上是没有限制的。但实际上可连接的单元数受总线上的吋间延迟及电气负载的限制。降低通信速度,可连接的单元数增加;提扃通信速度,则可连接的单元数减少。【注】R∈NEs∧s应用手册错误错误状态的种类单元始终处于种状态之一。主动错误状态动错误状态是可以正常参加总线通信的状态处于主动错误状态的单元检测出错误时,输出主动错误标志被动错误状态被动错误状态是易引起错误的状态。处于被动错误状态的单元虽能参加总线通信,但为不妨碍其它单元邇信,接收时不能秋极地发送错误通知。处于被动错误状态的单元即使检测出错误,而貫它处于主动错误状态的单元如果没发现错误,整个总线也被认为是没有错误的处于被动错误状态的单元检测出错误时,输出被动错误标志。另外,处于被动错误状态的单元在发送结束后不能马上再次开始发送。在开始下次发送前,在间隔帧期间内凶须插入“延迟传送个位的隐性位总线关闭态总线关闭态是不能参加总线上通信的状态信息的接收和发送均被禁止。这些状态依靠发送错误计数和接收错误计数来管理,根据计数值决定进入何种状态。错误状态和计数值的关系如表及图所小。表错误状态和计数值单元错误状态发送错误计数值()接收错误计数值()主动错误状态被动错误状态且或总线关闭态ENESAS应用手册初始状态主动错误状态或在总线上检测到次连续的个位的隐性位被动错误状态总线关闭态发送错误计数值接收错误计数值图单元的错误状态R∈NEs∧s应用手册错误计数值发送错误计数值和接收错误计数值根据一定的条件发生变化。错误计数值的变动条件如表所示。一次数据的接收和发送可能同时满足多个条件错误计数器在错误标志的第一个位出现的时间点上开始计数。表错误计数值的变动条件接受和发送错误计数值的变动条件发送错误计数值接收错误计数值接收单元检测出错误时例外:接收单元在发送错误标志或过载标志中检测出“位错误”时,接收错误计数值不增加接收单元在发送完错误标志后检测到的第一个位为显性电平时。发送单元在输出错误标志时发送单元在发送主动错误标志或过载标志时,检测出位错误接收单元在发送主动错误标志或过载标志时,检测出位错误各单元从主动错误标志、过载标志的最开始检测出连续发送时接收时个位的显性位时之后,每检测出连续的个位的显性位时。检测岀在被动错误标志后追加的连续个位的显性位时。发送时接收时发送单元正常发送数据结束时(返回且到帧结束也未检测出错误时)。时±接收单元正常接收数据结束时(到未检测出错误且正时常返回时)时设处于总线关闭态的单元,检测到连续个位的隐性位。R∈NEs∧s应用手册协议的基本概念协议如表所示涵盖了规定的基本参照模型中的传输层、数据链路层及物理层协议中关于基本参照模型中的传输层、数据链路层及物理层,具体有哪些定义如图所示。表基本参照模型基本参照模型各层定义的主要项目层:应用层由实际应用程序提供可利用的服务。层:表示层进行数据表现形式的转换。如:文字设定、数据压缩、加密等的控制指层:会话层为建立会话式的通信,控制数据正确地接收和发送。探层:传输层控制数据传输的顺序、传送错误的恢复等,保证通信的品质。如:错误修正、再传输控制。层:网络层进行数据传送的路由选择或中继如:单元间的数据交换、地址管理。层:数据链路层将物理层收到的信号(位序列)组成有意义的数据,提供传输错误控制等数据传输控制流程。如:访问的方法、数据的形式通信方式、连接控制方式、同步方式、检错方式一共应答方式、通信方式、包(帧)的构成。位的调制方式(包括位时序条件)。层:物理层规定了通信时使用的电缆、连接器等的媒体、电气信号规格等,以实现设备间的信号传送。如:信号电平、收发器、电缆、连接器等的形态【注】(开放式系统间互联)

独立信号解混代码，可以把混合的信号分离开来，可以用于图像处理和语音信号分离。

资源包含有DLL、LIB、H文件可根据需求程序调用函数接口来使用动态库其功能点有两个：生成QR-Code格式的二维码bool QR_Code(char *QR_text, char *bmpSavedPath, QRecLevel level, QRencodeMode hint);生成Data-Matrix格式的二维码bool Data_Matrix(char *DM_text, char *bmpSavedPath);资源包附赠（QR二维码开发组件—博客）和（二维码生成图片小软件）版权望断所有，下载请私用！

本设计采用单片机控制和RS485通信系统，包括一台主机和8台子机。主机采用图形液晶显示模块，能够显示子机传输过来的0～2V电压值、采集现场温度、实时时钟、电压超限报警等，同时可以使用键盘输入控制主机的工作状态。从机采用 位A/D，负责采集八路0～2V直流电压，采集精度可以达到0.1％以上，并且可以采集现场温度，同时应答主机发送的命令，将采集的数据上传，主机具有数据保存功能，并且掉电不丢失。在主机与从机的通讯中，采用RS485总线通信方式，有效传输距离超过100米。