ETAP的仿真实例，非常有用

512*512的矩阵，实现并行算法分行，分列，分块的做法以及串行算法的实现

KF接线端子封装（三维PCB封装库）AD用PCB封装库，作者主页下有全套的三维PCB封装库，欢迎大家下载使用。文件为作者千辛万苦整理的，请大家自用，不要随意传播，谢谢！～

【实例简介】利用ni采集卡和Labview的DAQMX模块实现信息的采集、处理、反馈。在传感器、采集卡连接正确的情况下可以实现以下几个功能：外部光线较暗时点亮灯泡和蜂鸣器；温度过高时打开小风扇；根据用户数据输入绘制光照与手机亮度百分比的各种模式的拟合曲线、方程。注意：程序可供做ni采集程序的参考，其中的各项常数可以自行调整以确保精确度。

void USART3_IRQHandler(void) //串口数据处理{ u8 temp; //定义接受数据变量 if(USART_GetITStatus(USART3,USART_IT_RXNE)) { temp = USART_ReceiveData(USART3); if (temp==0x55)GPIO_ResetBits(GPIOC,GPIO_Pin_11); //串口收到十六进制55，输出为0

SMTP邮件发送（MFC、VC++）耿网出品.用户可以发送或接收一个或多个带附件的邮件，也可以使用不同的SMTP或POP3服务器。

微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221

这是一本非常经典的控制方面的书，值得控制专业的人看看。3.2闭环系绕的方块图(58)333开环传递函数和前向传熄函数59)3,3,4闭环传递函数…""r5935扰动作用下的闭环系统……(59)336画方块图的步骤……………………………………………………………(60)3.3.7方块图的简化……………61)34.状态空间棋型………633.4.1现代控制理论P曾中■■■曾晋■冒■t曾4冒留634.2现代控制理论与传统控制理论的比较…………·■會t■曾■1曾■曾··曾?(6334.3状态"■量■■…………………(63)3.4.4状态变量加■鲁■p■b…(63)3.4.5状态向量…………""…"”TT………………(64)34.6状态空间∵……………………………………"…r………………………(64)34.7状态空间方程…………………………………………………………(64)34.8传递函数与状态空间方程之间的关系……""………{67)34.9传递矩阵………………………………………(69)35动态系统的状态空间表达式………〔69)3.5.1线性徽分方程作用函数中不包含导数项的n阶系统的状态空间表达式693.5,2线性徽分方程作用两数中包含导数项的n阶桑统的状态空阔表达式………………(71)3.6机减系统…幽幽■■……………………………(73)36.1质量…………………………………(74)36.2力中k■bd·tb■■。■hd昌h日b日■…(75)36.3说明………………………………………………………(75)3.64忧械系统(75)3.7电气系统(79)3.7.1LRG电路……………………(80)3.72复阻抗1『甲■■(803.73状态空闯表示…(81)3.74串联元件的传递函数…"…"……………"…"(823.75无负载效应串联元件的传递函数■4■p■p电动■■p●申自■电伽d■……………(83)3.8液位系统………………………(84)3.8.1液位系统的液阻和液容…,…,……,(8438.2液位系统B··d看+!F4日卓中中··■甲宁·日·早……………………(86)38.3相丘有影响的液位系统即B*自日·日·日■·■●·■■■。■。pdψbψhpdb晶■■■dbh■备■“■■■备(87)3.9热力系统………:(88)3.9.1热阻和热容893.92热力系统………………………………………………”…………(89)3.10非线性数学模型的线性化电t中自自■P■■唱■。■91)3.10.1非线性数学模型的线性近似………………………………………(91)Ⅷ3.10.2液压何服系统的线性化·.··.s:中命··。·咖■■要申中中血血··血唱自咖92)例题和解答………………………………………………(95)习题………………………………………………………………………(117)第4章瞬态响应分析4.1引言…■■·鲁■·■■……………………(124)4.1.]典型试验信号.(124)4.【.2瞬态响庇和稳态响应(1244.13绝对稳定性、相对稳定性和稳态误差h■卜■■嚼P自↓h■■4■q『■申曾q鲁『吾P1【會鲁P中·PP曾早目·日·擊中124)本章要点(125)4.2一阶系统(125)4.2.1阶系统的单位阶跃响应·吾B备日吾号目备B■日吾日中吾日『目·即■电中會■·日电中中P■·中目p目■■(125)4.2,2一阶系统的单位斜坡啊应…■■■命■■■b■自命■■■……………………(l27)4.23一阶系统的单位脉冲响应“(128)4.24线性定常系统的重要特性……………………………………………(128)4.3二阶系统画■■■mpq甲b■4.3.1直流伺服马达…………………………(」31)4.3.2同服系统■■■↓■■■L■昌L■↓L■↓L■↓■■↓晶↓■郾↓■↓昌■唱■■↓■■看…(131)4,3,3负载对伺服马达动特性的影响■"44L.··°·4··p.4日·■(134)4.3.4二阶系统的阶跃响应……(134)4,3,5瞬态响应指标的定义(1374.3.6关于瞬态响应指标蚋几点说明……4(139)4.3.7阶系统及其瞬态响应指标:hdh==如如d吾■■亠如139)4.3.8带速度反愤的何服系统…↓亠↓L↓■↓■■LL■甲喜自■卩■司甲4●db■4,3,9二阶系统的酥冲响应4.4用 MATLAB进行瞬态响应分析…………………………………………(1474.1引言…………………………………………………………………(147)44.2线性系统的 MATLAB表示■即■…………………(147)4.4.3传递函数系统单位阶跃响应的求法…………(148)4.4.4在图形屏幕上书写文本…………………………咖■●■·■■●■■■■bdp■■■如k晶■晶司■■■冒h152)4.4.5脉冲响应■幽■·●■■口血■甲■甲……·(15244.6求脉冲响应然另一种方法■b山…………(155)4.4.7斜坡酝效■昌L■■■■■■■■■L■■■■冒?上……(157)4.4在状态空间中定义的系统的单位斜玻响应………………………………………(158)4.49对初始条件的响应(传递函数方法)■■■■■■■山■晶■b■晋b山4.4.10对初始条件的响应(状态空间方法情况1)…………(162)4.4.1l对初始条件的响应(状态空间方法,情况2)…………………………(16345用 MATLAB解题举例_警冒晋日P冒中吾冒q晋個…(165)4.5.1机械振动系统(165)4,5,2计算机仿真(连续时同方法}…t………………………………(168)M4.53计算机仿真《离散时间方法)·…例题和解答(73}习题………(192}第5章控制系统的甚本控制作用和南应L■………………(196)5.1引言(196)5.2基本控制作用p司■(196)52.11业控制器的分类“…+4L昌■■4b亠』L■↓“■■L■L■■■品昌↓■k↓昌■↓■昌522自动控制器,执行机构和传感器(测量元件)………■·■■■自自·血■(197)523自操作控制器……………195.2.4衩态或继电器型控跏作用(198)5.2,5比例控制作用……………………………(199)5.26只分控制作用……………(2005.27比例积分控制作用5,28比例徵分控制作用品日4日吾4品日4………(201)529比例-加积分加微分控制作用……………………!…,"!(2015.21传越器(测量元件〕紂系统性能的影啊……………………(202)53积分和微分控制作用对系统性能的影响…………(203)5.3.1积分控制作用(2035.3.2液位控制系统的积分控制(204)53,3对转矩扰动的响应(比钢控制)……n534利用MAAB求响应………………………………(2陌)535对转矩扰动的响应(比侧加积分控制)…………………………*(207)5.36分控制作用2095.37带惯性负裁系统的比例控制………………0095.38具有惯性负载系统的比例--徽分控制■■↓■晋h■■↓■昏b■h■■+■晋■■晋■昏·画;b(209)539二阶系统的比例加微分控制………………………………………………………(210)5.4高阶系统(211)4.1套阶系统的瞬态响应分析………………………………………………………(2ll54.2闭坏主导极点■中▲■■■↓·;■↓■k昌■■·■』■■■■q昌昌■■即■↓■口是即自↓■……………………(213)54.3复平面内的稳定性分析…(213)55劳斯稳定判据……_p·…………………(215)5.5.1劳斯稳定判据简介…(215)5.5.2特殊慒祝………………………s…………………………(217)5.5.3相对稳定性分析…………(219)5.5.4劳斯稳定判据在控制系统分析中的应用……219)56气动控制器…即即上命聊(225.6.1气动系统和液压系统之间的比较(2205,6、2气动乐统·+4·(21}5,6,3压力系统的气阻和气容……………………s……(22l1)64压归系统(222)5.6.5气劲喷嘴-挡板放大器Lb可·+Lqb命(223)566气矿接续骺………(224)56.7气动比例控制器(力-距离型(225)568气动比例控制器(力平衡型)………甲中幽自司b电血■即…………(228)569气动执行……會■『冒冒口■斷『T■■P■骨■冒會TtP■…………………(229)5.6.10获得徽分控制作用时基本原理………………………………(230)56.11获得气动比例抓积分挽制作用的方法(232)56.12获得气动比倒如积分如微分控制作用的方法上■雪會曾·『中平曾會會會(234)5、7液压控制器(2355.7.1液压系统……(235)5.7.2液压系统的优缺点……………”…(235)5,73说明……-………………………(25)5.74液压积分控制番…(235)575液压比例控制器……………(237)5.76级冲器■L■■■I(238)57.7获得液压比倒加积分控制作用的方法………………(2405.78获得液压比例加黴分控制作用的方法(24158电子控制器(242)5.8.1运算放大器吩■ P Pk J即pbmm……(242)5.8.2反相放大器……………+……………………(243)58,3非反相放大器…………………………………(243)5.8.4求传递函嫩的阻抗法……2465.8.5利用运算放大器构成的超前或滞后网络………■鼻■■■昏昌■■■L■晷■(246)5.86采用运算放大器的PD挽制器……h口口■b口■■…(24859正弦响应中的相位超前和相位滞后……………(2495.10单位反馈控制系统中的稳态误差……(253)5.10.1控制系统的分类………………………………………………………(2535.10.2稳态误差……………………………(253)513静态位置误差常数K…254)5.104静态速度误差常数E……………………(255)5.10.5静态加速度误差常数K……………………(256)5,10,5小结…………(257)5.10.7开环控制系统与闭环控制系统中稳态误差的比较………………………(258)例题和解答(259)习题(285)第6章根轨迹分析294)6.Ⅰ引言中4L昌qb中↓昌↓↓d■↓■昌■■「昌品■■冒(294)6.1.]根教迹法294)6.1.2章要点■■冒冒↓矗■■■晋P■1P■·甲■↓昏冒甲甲11晋曾甲【■■·■■■『平甲口暑甲■冒(295)62根轨迹图■t血●…(295)6.2.1辐角和幅值系统q昌qp中▲L晶mdb4L(295}6,2.2示例………………………………297)6.3根轨迹作图的一般规则■·■■冒血■上■■"■口■1■『曾曾··P平俨中(305)6.3,1作根轨迹图的一般规死·…(306)6.32关于根轨迹图的说明30963,36(g)的极点与Hs)的等点的抵消-……(3106.3,4典型的极零点分布及其相应的根轨迹…■■■↓■■■■L■(311)6.3.5小结……(31264用 MATLAB作根凯迹图………(32)6.5特殊情况··b44如吾b4+吾=如6.5.1变量参数不以乘法因子形式出现时的作根护迹的方法(3226.5.2正反馈系统的板轨迹(326)6.6控制系统的根轨迹分析…30)66.】根轨迹与定常增益轨迹的亚交性……………………(306.6.2条件稳定系统晶■↓↓晶■■噌晷郾↓■■司鲁■即■■即330)663非最小相位系统…(332)具有传递延迟的系统的根轨迹∴……(332)68根轨迹族曲线……即司●中自q中■血↓自咖d·口司D即自■……(336)例题和解答…■q聊d■●■wφh哂看■■■■甲ψ画讠■晋■■■h■晶h■↓■冒h(340)题………-……4(370)第7章控制系统设计的根轨迹法…………………………………………(375)7.l引TP『4中自曾中l“■■■中■■…………:…41(375)7.1.1性能指标………(375)7.2系统的校正■凸■■■■■看■■曾■番↓■警b■h■冒鲁语■■昏鲁十画■P■375)7,1,3串联校正和反馈或并联)校正……………4(375)7.1.4校正装置………………………………………………"……(3767.15设计步骤……·(3777.16本章要点…………………………………………………(377)了2初步设计研究…如吾b4.+4备·"日b4日………………(37772.1控制系统设计的根轨迹法………………·(37872.2增加概点的影响…日日即·中(378)7.2.3增加零点的影响……………………………………"…………(378)7,3超前校正………………………………………………………(379)7.3.1超前网络(3797,32基于根靴迹法的超前校正技术…P自中■■■中(3807.3.3说明………■■↓b福h■■h■昏↓■4h■■4■冒PP■(3857.3.4校正与未校正系统阶联响应的比较……………(3857,4滞后校止………………………(387}74.1●采用运算放大器的电子滞后饺正装置…………,……………(387)74.2应用根轨迹法进行滞后校止……↓■ IJd·d●◆■q·甲·甲■晶■吾■■『·(387)7.4.3用根轨迹法进行带后校正设计的龙骤·即4·bdb■■■+日P中中自·b■……………(38875滞后超前校正……………T冒『·冒4(3957.5.1利用运算放大器构成的电子滞后-超前校正装置7.52基于根轨迹法的淠后超前校下方云……………………………(396例题和解答(405)习题…(433)第8章频率响应分析…看■■■■…(438)8.1小言女_备吾“···*".·""""··P+“8.1.1系统对正弦输入信号的稳态输出备如A如4吾日.甲甲.·昌………∴…(438)81.2用图形表示频率响应性■d■■↓■……,(439)8.13本章要点…………………(439)8.2伯德图甲山日古B4+日··日·日·自咱D中‘■日十F(40)8.2.1伯德图或对数坐标图↓■}■画▲■■晶■■■『P■『"4··▲■备■■4■昏(443)822G(})H(c)的基本因子……………………41(4408.2.3增益K……"………………………(440)积分和徽分因子(〕441)82.5一阶因子(1+7)…一↓■■↓■■∵……(442826二阶因子[L+2(/mn)+/ex)2]+1………………………*………827谐振频率u和谐振峰值Mb■b■督■■冒P冒q甲…·(448)82.8绘制伯德图的一般步骤士晋晋晋!p……………·(449)82.9最小相位泵统和非最小相位系统rp*4+·〓如山血■日■P自噜中·■■·日■唱···(451)8.2.10传递延迟………〔452)8.2.11系统类型与对数幅值曲线之间的关系…(4548,2,12静态位骱误兼常数的确定-……,,……(454)82.13静态速度误差常数的确定…………………4(455)8.2.14静态加速度误差常数的确定……………………………………(456)83用 MATLAR作伯德图……↓4晶昌■■备■司晷阜……,……(457)8.3.1在一定的類率点上增益变成无穷大时对伯德的影响…(464)8.3,2求状态空闸中的系统的伯德图…………"………¨……………(466)84极坐标图v·自司·■■·■■·■日■唱唱申申卓鲁日tb■……(468)8,4.1积分和微分因子(如)3…(468)842…阶因子(1+户T)↓pmu·卓■→·日·q4如■十■吾■■■■唱P…,(46943阶因子[1+26(/an)+(/mn)2]平(470)844传递延迟472)8.45极坐标图的一般形决(474)85用MAB作奈魁斯特图………:…(476)8.5,1注底…479)8.5.2定义在状杰空间的系统的奈魁斯特图画法……………………………(481)8.6对数幅-相图■P·昏P昏P曾■P■晋■■『q■晋■■■晋■昌晶■d……………………s(484)8.7奈魁斯特稳定判据會中号甲看P■(486)8.7.1预备知识………………………(487)87.2映射定理…甲P甲申……(490)8.73映射定理在闭环系统稳定性分析中的应用……,…:4(490)8.74奈魁斯特稳定判据早P日音卡吾日14‘44b4b自(491)875关于奈魁斯特稳定判据的几点说明(492)8.76G(s)H(s)含有位于轴上射极点和(或〕零点的殊情祝……………………………(493)88稳定性分析…『■『餐……………1(4958.8.1条件定系统■■晶■口■■■……(499)8.8.2多凹路系统↑·4中可中中!广曾?冒曾■『■?『■十D■自■血日自咖司即●p●中甲电甲m看·口电(499s.8.3应用于逆极坐标图上的奈魁斯特稳定判据(501)884利用改变的奈魁斯特轨迹分析相对稳定性■_會『會會■■■■會■■個■會■(504)8.9相对稳定性…:·+··=·+“+·4+“+日·中曾十◆·■日『『■■■…………………(506)891遁过保角变换进行相对稳定性分析………(5068.92相位裕量和增益裕量(588.93关于相位裕量和增益裕量的几点说明…………………………………………(51089.4谐振峰值幗值M和谐振蜂值版率n…512)895杯崔二阶系统中阶联瞬态啊应与频率啊应之间的关系5138.96一般系统中的阶跃瞬态响与频率响应之间的关系…………(515)897截止频率和带宽…………………………………………………………(516898剪切率…………………,……(517)8.10闭环频率响应……………………………(518)810.1单位反馈系统的闭坏频率响应4『F:-T自+卡…(518)8.10.2等幅值轨迹(M遴)………(519)8.103等相角轨迹(N)………………,……∵,……………(520)g.104尼枓尔斯图……………s522)810.5非单位反馈系统的闭不频率响应最↓bL(525)8.10.6增益的整…(525)8.11传递函数的实验确定法…………………………………-…………(5288.11.1正弦信号产生器528)8112由伯德图求最小相位传递函教……………(529)3113非最小相位传递函数……………………………*……………(530)8.114关于实验确定传递区数的儿点说明例题和解答■血■■b■盘血■口■■自■■■■■■■■■_■■口■■盘血■鲁■1●和中血D命申…………(533习题(56第章控制系统设计的频率垧应法(571)引肓咖●?控制系统设计的频率响应法…………………(5719.1.2从开不頻率响应可以获得的信息…唱卓幽■“●■◆■■如····Paqq↓·甲571)9.1.3对严环频率响应的要求………44572)91.4超前滞后和滞后超前校正的基本特性…………∵(53)915本幸要点…573)92超前校正……………………………………"………………(573)92!超前校正装置的特性…………(573)922基于频率响应法的超前校正………………………(574)9.3滞后校币…■山d■…………581)9.3,1滞后校正装量的特性w■!冒■■昏『■晋■冒+『晶………"……(581)93,2幕于频卒响应法的滞后校正…………………………………(582)9.3.3关于滞居校正的一些说明588)9.4滞后-超前校正…………(589)94.1溢后-超前校正装置的特性·■曾曾4·冒骨T中·「冒曾雪『『會自口t曾會4會■■『中曾平·目自曾會日·日幽(589)9.4.2基于频率响应法的滞后超前校正……………·(5919.5结论5959.5.1超前、滞后和滞后超前校正的比较(595)95.2图形对比……………………………………………(595)9.53反馈校正………(5969.5.4不希望极点的抵消……………"(596)9.5.5不希望的共轭复数极点的抵消……(597)56结束语…鲁自日·b中日即………………………………………(598)例题和解答■唱↓昌郾昌■■昌昌■↓■■■〖』』晶■晷晶L■↓口■■↓■■■■即中↓(598)习题622)第10章PID控制与鲁控制………(625)10.!引言………(62510,2PI控制器的调节律………………………………………………(625)10.2.1控制对象的PD控制…………(625)10.2.2用来调整P控制器的齐格勒尼柯尔斯法则(62610.3.3第一种方法…………………………………………………(626)10.24第二种方珐……(628)102.5说明……"…10.3PI控制方案的变形(634)10.3.1PID控制63510.3.2IP担齣…………………(63610.3.3从IPD控制方案推广到带状态反馈的积分控制方案367)10.3.4二由度PD托制↓4吾··B日k日(6380.4二自由度痉制………,………(638)

这是Xu在美国读博期间发表的论文中使用的斑点去噪滤波器的MATLAB文件

matlab读取txt数据，然后然后限幅+递推平均滤波，只需改变文件路径就可用

matlab 图像傅里叶变换 (源代码)