机载下视圆周SAR三维BP成像
机载下视圆周SAR三维BP成像，对学习CSAR成像算法的同学很有帮助庞守宝,等:机载下视圆周SAR三维BP成像匚发射信号]一世P点救射回波信号时间匹配滤波补偿相位因子DBP成像相十叠加0)0图5同一高度x平面内4点的能量图成像显示图3算法的成像流程图103仿真结果60仿真的场景是在三维平面上立方体的8个顶点,场景的原始三维仿真图如图4所示。仿真中的主要的303035系统参数如表1所示。表1仿真所用的主要系统参数10载波波长0.008m带宽750 MHz脉冲重复频率飞行高度0203040506070801000m/n角速度0.4rads载机飞行半径100m阵元数目阵元间距0.008m图6同一高度x平面内4点的等高线dB图10108口424044维/363436-10-6y/m原始场景图7BP成像之后的初始结果图图4原始场景图系统仿真的结果如图5~图8所示。图5为同高度4点的能量图,从图5中可以看出,有目标的区域能量积聚非常明显,没有目标的区域能量很小,几乎可以忽略,这正是BP算法相干累积的优点。图65为同一高度4点的等高线图,从图中可以得知,点目rim标存在处的能量较为集中,有目标的区域相对没有目y/m场景恢复标的区域的dB差较大,能量差异通过右边的色彩进度条来表示。图7为截取某一门限后BP成像的结果图8场景恢复之后的成像图图,根据图中8点位置可知,BP累积之后的初始成像4结束语相对于原始场景只是出现了坐标的平移,8个点的相对位置是正确的。图8为BP成像结果转换到原坐标分析了飞机圆周飞行时对地面场景目标的三维成系之后的成像结果。比较图4和图8,可以得知,圆像结构和成像机理,机载下视三维圆周SAR区别于周SAR三维BP成像的结果和原始场景吻合,即圆周普通的直线飞行的三维SAR在于回波信号距离压缩SAR可以精确的还原目标场景的三维信息。之后出现沿航向和切航向的耦合项,使得经典的RD16庞守宝,等:机载下视圆周SAR三维BP成像电炮是算法、CS算法和距离徙动算法等受限,BP算法通过(8):1252-1265二维搜索,避免了单独处理每一维的过程,之后通过[5] Wang Y P, Tan WX, Hong W,etal. Focusing Bistatic像素单元离散化、补偿每一距离门相位因子、相干累Circular SAR Data Using Polar Format Algorithm [C]. Syn-积等步骤构建场景目标函数,完成成像处理。三维场thetic Aperture Radar, APSAR2009, 2 Asian -PacificConferences on digital Objects Identifier, 2009: 989景仿真结果表明,圆周SAR能够精确的还原场景目992.标的三维信息。此结构在地质斯探和自然灾害救援等[6]Du Lei, Wang Yanping, Honf Wen, et al. Analytic Mod-有现实意义。eling and Three Dimensional Imaging of Downward- Loo-参考文献king Sar Using Bistatic Uniform Linear Array Antenna[C]. Ist Asian and Pacific Conference on Synthetic aper-[1] Hong W, Wang Y P, Tan WX, et al. Tomographic SARture Radar Proceedings, 2007: 49-53and Circular SAR Experiments in Anechoic Chamber [c]. [7] Jens Klare, Matthias Wei, Olaf Peters, et al. ARTINOGermany: EUSAR, 2008A New High Resolution 3D Imaging Radarsystem on an Au-[2] Cantalloube H, Colin E. Airbome SAR Imaging Along a Cirtonomous Airborne Platform [C]. Greeces: IGARSScular Trajectory [c]. Germany EUSAR, 2006: 16-182006:3842-3845[3] Riot H. Cantalloube, Circular SAR Imagery for Urban Re- [8] Wei M, Ender J, Peters 0, et al. An Air-bone Radarmote Sensing [c]. Germany: EUSAR, 2008: 2-5for Three Dimensional Imaging and Observation - Technical[4] Soumekh M. Reconnaissance with Slant Circular SAR ImaRealisation and Status of ARTINO [C]. Germany: EU-ging [J]. IEEE Trans. On Imaging Proccessing,1996,5SAR, Dresden,2006:5315-5318“→·“M“+“““M(上接第11页)[5]施韶华,李孝辉,刘阳.基于直接数字频率合成的高精参考文献度频率源设计[J].电子测量与仪器学报,2008(90):[1]周殿清.基础物理实验[M].北京:科学出版社,200385-389[2]杨刚,周群.电子系统设计与实践[M].北京:电子工[6]王军证,王建斌,陈仁伟.基于DDS的超声导波信号业出版社,2004源的设计[J.电子测量技术,2010,33(2):19-2.[3]刘海成.AVR单片机原理及测控工程应用[M].北京:[7]吴加政,苏新彦.基于DDs的信号模拟器设计J.国北京航空航天大学出版社,2008外电子测量技术,2009,28(10):67-70[4]柴媛媛,唐慧强,辛红伟.基于ARM和DS技术的信[8] ST Microelectronics Corporation,smFI03 XX Datasheet[EB/号源设计[J].通信技术,2009,42(10):54-56OL].(209-12-14)[2010-03-10]ww.st.com+一中““-(上接第13页)器的输出波形。图4所示为示波器测量仿真输出波形。真分析,在编辑电路、调整元件参数时十分方便,它可以进行各种电子电路的设计与仿真,并且仿真精度高。给电路设计测试带来方便,使电子线路的设计、性能参数的仿真等繁琐的任务变得轻而易举。参考文献[1]郑步生. Muhisim2001电路设计及仿真入门与应用[M]北京:电子工业出版社,2002.[2]张新喜. Multisim10电路仿真及应用[M].北京:机械图4示波器测量仿真输出波形工业出版社,20102结束语[3]美国国家仪器有限公司. NI Multisim1l简化教学和设计中的电路仿真[Z/OL].(2010-02-01)[2010-05-在时序逻辑电路设计中应用 Multisim软件进行仿11http://www.ipcm.com.cn机载下视圆周SAR三维B成像旧WANFANG DATA文献链接作者:庞守宝,张晓玲,吴堃, Pang Shoubao, Zhang Xiaoling, Wu Kun作者单位:电子科技大学,电子工程学院,四川,成都,610054刊名:电子科技英文刊名:ELECTRONIC SCIENCE AND TECHNOLOGY年,卷(期):2010,23(12)参考文献(8条)Wei M; Ender J; Peters 0 An Air-borne Radar for Three Dimensional Imaging and Observation-TechnicalRealisation and status of artin 20062. Jens Klare; Matthias Wei: Olaf Peters ARTINO: A New High Resolution 3D Imaging Radarsystem on anAutonomous airborne plat form 20063. Du Lei; Wang Yanping; Honf Wen Analytic Modeling and Three-Dimensional Imaging of Downward-LookingSAR USing Bistatic Uniform Linear Array Antennas 20074. Wang y P; Tan W X; Hong W Focusing Bistatic Circular SAR Data Using Polar Format Algorithm 2009oumekh M Reconnaissance with Slant Circular SAR Imaging 1996(08)6. Oriot H Cantalloube Circular SAR Imagery for Urban Remote Sensing 20087. Cantalloube H; Colin E Airborne Sar Imaging Along a Circular Trajectory 20068. Hong W; Wang y P; Tan W X Tomographic Sar and Circular Sar Experiments in Anechoic Chamber 2008本文链接http://d.g.wanfangdata.comcn/periodiCaldzkj201012005.aspx
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MicroElectronic Circuit Design
微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221
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