电子噪声与低噪声设计
本书致力于利用随机噪声理论分析和解释电子系统中噪声的产生和传播问题，介绍各种噪声源相关的机制和模型，说明不同噪声的特性和传播方式，以及线性电路中的噪声分析方法和噪声特性测量方法，并详细介。。。内容简介电子噪声包括内部固有噪声和外部干扰噪声。电子噪声是影响检测系统性能的主要因素之一。在通信系统中,噪声可能导致信息传输错误本书致力于利用随机噪声理论分析和解释电子系统中噪声的产生和传播冋题,介绍各种噪声源相关的机制和模型,说明不同噪声的特性和传播方式,以及线性电路中的噪声分析方法和噪声特性测量方法,并详细介绍各种不同噪声的抑制方法,给出大量实例,总结出低噪声设计的规则和要点。木书可用作电子工程、自动化、测试技术与仪器等专业的本科生或研究生教材,也可供涉及电子噪声和电磁兼容性的工程技术人员参考。本书封面贴有清华大学出版社防伪标签,无标签者不得销售版权所有,侵权必究。侵权举报电话:010-6278298913701121933图书在版编目(CIP)数据电子噪声与低噪声设计/高晋占编著.一北京:清华大学出版社,2016ISBN978-7302-43559-4I.①电…Ⅱ.①高…Ⅲ.①电子系统一噪声②电子系统一低噪声一设计ⅣN.①TN911.4②TN722.3中国版本图书馆CIP数据核字(2016)第081960号责任编辑:王一玲封面设计:常雪影责任校对:梁毅责任印制:沈露出版发行:清华大学出版社pogtlt:http://www.tup.com.cn,http://www.wqbook.com地址:北京清华大学学研大厦A座邮编:100084社总机:010-62770175邮购:010-62786544投稿与读者服务:010-62776969,c-service(@tup.tsinghua.edu.cn质量反馈:010-62772015, zhiliang tup. tsinghua.edu.cn印装者:清华大学印刷厂经销:全国新华书店开本:185mm×260mm印张:21字数:522千字版次:2016年6月第1版印次:2016年6月第1次印刷印数:1~1500定价:59.00元产品编号:06269401在电子电路和系统中,噪声是个重要问题。噪声污染有用信号,并使信号包含的信息增加了不确定性。电子噪声是影响检测系统性能的主要因素之一。在通信系统中,噪声可能导致信息传输错误。即使在噪声阈值较高的数字电路和计算机系统中,严重的噪声可能造成存储位的变化和程序运行混乱噪声包括内部固有噪声和外部干扰噪声。内部固有噪声是由载流子的随机运动引起的,有些固有噪声源可以通过在制造过程中提高加工质量加以控制,但其中大多数是基础噪声,不取决于技术。而外部干扰噪声是由外部噪声源发岀,经过某种耦合渠道对电路污染的结果。这两种噪声具有不同原因,它们需要不同的处理方法,在多数书籍和文献中,这两种噪声都是分别对待的,外部干扰噪声通常是电磁兼容性(EMC)相关书籍的主题。但是,这两种噪声引起的问题是类似的,应该综合在一起考虑。在处理其中的一种噪声时,有理由必须把另一种噪声也考虑在内。例如,当处理弱信号的电路无法正常工作时,污染了有用信号的噪声是源自于该电路本身还是从外部拾取的,从用户的角度来看都是无关紧要的。在这两种情况下噪声都会掩盖信号,在最坏的情况下则不能恢复信息内容。因此,只努力抑制电路的固有噪声,但缺乏抵御干扰噪声的保护手段,电路的噪声特性就会大打折扣。另外,在设计屏蔽措施时,努力把干扰噪声降低到固有噪声幅度之下,往往没有多大意义。本书涵盖上述两种噪声,致力于分析和解释电子系统中各种噪声的来源和性质,介绍各种噪声源的机制和模型,说明不同噪声的特性和耦合方式,以及线性电路中的噪声分析方法和噪声特性测量方法,介绍各种噪声的抑制措施,给出低噪声设计的规则和方法。许多种噪声具有随机性,其描述方式和分析方法不同于确定性信号,不太容易理解,本书第1章首先介绍随机噪声的基本原理和特性,这是后续各章及延续阅读的理论基础。第2~5章致力于固有噪声,这种噪声取决于电子器件和电路设计。第2章介绍各种固有噪声源的特性和描述方法;第3章介绍各种噪声参数和噪声分析方法;第4章介绍电子系统中常见的电子器件的噪声源、噪声模型和噪声特性;第5章介绍常用的噪声性能测量方法。前言第6~8章致力于外部干扰噪声,这种噪声受设备的物理结构和电路布局的影响很大。第6章介绍各种干扰噪声源和干扰耦合途径,除电磁噪声外,还特别介绍机械原因或温度扰动引起的噪声;第7章介绍干扰噪声抑制方法,重点是屏蔽和接地;第8章介绍常见干扰噪声源的噪声产生机制和预防措施。第9章介绍低噪声电路设计的方法和技术,包括选择低噪声有源器件,确定电路组态和工作点,噪声匹配的实现等,特别分析了反馈对噪声性能的影响。本书可用作电子、通信、自动化、测试技术与仪器等专业的高年级本科生或研究生教材,也可供涉及电子噪声和电磁兼容性的工程技术人员参考。由于作者水平所限,书中难免存在缺点和错误,恳请广大读者批评指正高晋占2015年10月于清华园符号說明1.基本符号X电抗的通用符号,单位为Ω频率通用符号,单位为Hz导纳的通用符号,单位为Sfo中心频率,单位为Hz阻抗的通用符号,单位为Ω截止频率,单位为Hz角频率通用符号,单位为rad/s电流通用符号,单位为A2.线性系统符号距离或长度,单位为mA(t)幅度函数电压通用符号,单位为V)相位函数器件内部的等效电阻,单位为9G(a)幅频特性函数B系统频带宽度,单位为Hz相频特性函数B电纳的通用符号,单位为Sh(t)冲激响应函数C电容的通用符号,单位为FH(j)频率响应函数E数学期望运算子H()传递函数电导的通用符号,单位为SH(x1)离散传递函数电流的有效值,单位为A3.随机噪声符号平均直流电流,单位为A噪声电压L电感的通用符号,单位为H噪声电流互感的通用符号,单位为H噪声电压的均方值P功率的通用符号,单位为W噪声电流的均方值R电阻或等效电阻,单位为ΩE电路的输入电阻,单位为Ω噪声电压的有效值,En=√eR电路的输出电阻,单位为噪声电流的有效值,n=√R负载电阻,单位为Ω噪声电压的平方根谱密度,单位R信号源内阻,单位为Ω为V/√Hz电压的有效值,单位为V噪声电流的平方根谱密度,单位热力学温度(旧称绝对温度),单为A/√Hz位为K热噪声电压符号说明热噪声电流共射接法下集射极之间的微变电散弹噪声电压阻散弹噪声电流场效应管漏源之间的等效电阻1/f噪声电压导通电阻1/f噪声电流二极管,场效应管的漏极F噪声系数( noise factor)场效应管的栅极噪声因数( noise figure),单位为dBS场效应管的源极S信噪比二极管电流,漏极电流B等效噪声带宽共射接法下的基极电流△f窄带宽度共射接法下的集电极电流p(x)x的概率密度函数共射接法下的发射极电流x的均值共基接法下的电流放大倍数,a=x的方差△Ic/△Ix的标准差共射接法下的电流放大倍数,B=x的均方值△Ic/△IBC2(x)x的自协方差函数共射接法下的直流电流放大倍Cx(x)x的归一化自协方差函数数,B=Ic/IBCx(z)x和y的互协方差函数5.其他符号Cx(x)x和y的归一化互协方差函数电磁辐射速度,c=2.998×10m/sR2(r)x的自相关函数h普朗克( Planck)常数,h=6.62R2(x)x和y的互相关函数1034JsS(f)噪声的功率谱密度函数k玻耳兹曼( Boltzmann)常数,k=S2(f)噪声电压的功率谱密度函数1.38×1023J/K(f)噪声电流的功率谱密度函数电子电荷,q=1.602×10-°C2(f)x的功率谱密度函数波长,mS2(f)x和y的互功率谱密度函数介质的介电常数p(x)x的归一化自相关函数自由空间的介电常数,Eo=8.85×(x)x和y的归一化互相关函数10 pF/mmJ|雅可比( Jacobi)行列式对自由空间的相对介电常数,En=4.半导体器件参数符号基极介质的磁导率C集电极自由空间的磁导率,A0=4x发射极10Hm1=4x×10pH/mmfr晶体管的特征频率,即共射接法对自由空间的相对磁导率,=下电流放大倍数为1的频率,单/0位为Hz介质的电导g跨导铜的电导,=5.82×107S/m基区体电阻对铜的相对电导,01=a/0rb’e发射结的微变等效电阻CMRR共模抑制比第1章随机噪声基础1.1随机噪声概述…………1.1.1噪声定义与分类1111.1.2内部固有噪声和外部干扰噪声比较1.1.3噪声的影响1.2随机噪声的概率分析方法…3471.3随机噪声的统计特征…1.3.1均值、方差与均方值········,····,·,,··,,,,,,······,·······,·,,1.3.2相关函数与协方差函数…1.3.3功率谱密度函数151.4常见随机噪声171.4.1白噪声与有色噪声171.4.2窄带噪声………………………………………………………191.5随机噪声通过电路系统的响应…211.5.1随机噪声通过线性系统的响应……………………………211.5.2随机噪声通过非线性系统的响应24第2章电子系统中的固有噪声源……………………………………………………292.1热噪声302.1.1热噪声的起源…302.1.2热噪声的特性……………………302.2扩散噪声……………………………………352.3散弹噪声362.4量子噪声………………………………………………………………………………39Ⅵ目录2.5产生-复合噪声(G-R噪声)…………………………………………………………402.61/f噪声…422.7爆裂噪声……………………………………………………………………452.8雪崩噪声…第3章噪声参数与噪声分析503.1.功率和增益3.1.1功率的各种常用定义513.1.2资用功率和资用功率增益…3.1.3可交换功率和可交换功率增益553.2等效噪声带宽…563.3线性一端口的噪声参数……603.3.1等效噪声电阻…………………………………613.3.2等效噪声温度623.3.3其他噪声参数……633.4线性二端口的噪声模型与噪声参数653.4.1E-Ⅰ噪声模型及等效输入噪声电阻…………………3.4.2等效输入噪声温度………693.4.3工作噪声温度……………723.4.4噪声系数……733.4.5噪声测度………………………………………………………………813.5二端口噪声分析………833.5.1二端口的噪声模型变换…………………………………………………833.5.2等效噪声源相关时二端口的噪声分析…………84第4章电子器件噪声884.1电阻噪声………884.1.1电阻的噪声机制与噪声指标…………………………894.1.2低噪声电阻的选择4.2电容、电感和电池噪声934.3半导体二极管的噪声特性…………………………………………………………954.4双极型晶体管(BJT)的噪声特性……994.4.1BJT的结构、等效电路和噪声源………………………………………994.4.2BJT的噪声参数1024.4.3BJT噪声的频率分布……………………………………………………1044.5场效应管(FET)的噪声特性1075.1FET的结构与噪声源…………1074.5.2FET的噪声等效电路与噪声参数1104.6运算放大器的噪声特性………………………………………………………113目录4.6.1运算放大器的等效输入噪声模型………………………………1134.6.2运算放大器噪声性能计算1164.7传感器电路噪声分析………………………………………………………122第5章噪声性能测量1335.1噪声测量常用方法……1335.2噪声测量中的检波器和平均器………………………………………………………1365.3噪声功率和有效值的测量误差1404噪声功率谱密度测量………………………………………………………1425.5二端口等效输人噪声测量1465.6噪声系数测量…………………………………………………………………1475.7噪声温度测量……1545.8其他噪声性能的测量和计算………………………………………………1575.9噪声发生器160第6章干扰噪声1666.1外部噪声源………………………………………1676.1.1自然噪声源…1686.1.2电磁噪声源1706.1.3静电噪声源…1736.1.4非电起源的干扰噪声源………………………………………………1746.1.5干扰噪声的频谱分布1766.2干扰噪声耦合途径……………………………………………………………1776.2.1传导耦合…1796.2.2电场耦合………………………………………………………1836.2.3磁场耦合………1866.2.4电磁辐射耦合………1916.2.5耦合模式……………………………193第7章干扰噪声抑制方法…1967.1电磁屏蔽………………………………………………………………………1967.1.1场传播与波阻抗1977.1.2屏蔽层的吸收损耗……………………………………………………2007.1.3屏蔽层的反射损耗2027.1.4屏蔽层中的多次反射…………………………………………2067.1.5屏蔽效能分析与综合2087.1.6影响屏蔽效能的其他因素…………………………………2117.1.7屏蔽总结2147.2电缆屏蔽层接地216
- 2020-12-04下载
- 积分：1
MicroElectronic Circuit Design
微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221
- 2020-12-10下载
- 积分：1
