线性调频信号模糊函数仿真

自学是门手艺(整理)-源自GitHub李笑来,在GitHub上阅读感觉不是很方便,所以整理成了PDF文件,可以打印下载,整理时间(2019-4-1),如果不想花费积分,也可以自行去GitHub上观看,学习

【实例简介】在Matlab中输入上标、下标、希腊字母，特殊符号或字体 很好用

模拟退火法 ，蚁群算法，遗传算法，深度搜索，matlab工具箱，神经网络，最全面的讲解与分析。

微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221

用到了stm329个io口同步输出pwm信号，无论输出多少路，都可以进行很好的参考。

华为FusionInsight HD 2.7 技术白皮书，详细介绍了华为版Hadoop的各个组件功能。华为FusionInsight是华为企业级大数据存储、查询、分析的统一平台。华为 Fusionlnsight hd27技术白皮书日录目录1简介…1.1 Fusionlnsight hD概述1.2 FusionInsight HD组件介绍.2重点组件介绍52.集群管理 Manager622分布式文件系统HDFS23统一资源管理和调度框架YARN24分布式批处理引擎 Mapreduce.25分布式数据库 HBase2.6数据仓库组件Hive27分布式内存计算引擎 Spark28全文检索组件Solr.29批量数据集成 Loader( Scoop)….122.10实时数据采集 Flume142.11流式事件处理( Storn)…2.11.1 Storm2.11.2 StreamCQL…2.11.3 Flink2.12分布式高速缓存 Redis2.|3分布式消息队列 Kafka2.14作业编排与调度 Oozie...........212.15数据继承入凵Hue文档版本01(2017-07-30)华为专有和保密信息版权所有c华为技术有限公司华为 Fusionlnsight hd27技术白皮书1简介简介1.1 FusionInsight HD概述1.2 FusionInsight hD组件介绍文档版本01(2017-07-30)华为专有和保密信息版权所有c华为技术有限公司华为 FusionInsight hd27技术白皮书1简介11 FusionInsight hD概述FusionInsight是华为仝业级大数据存储、查询、分析的统一平台,能够帮助全业快速构建海量数据信息处理系统,通过对巨量信恳数据实吋与非实时的分析挖掘,发现全新价值点和企业商机应用层REST API数据服务明细影像推荐/伪控关系轨迹Data世像ServiceREST API/SQL/SDKloaderMe知认FormerManager数据分析Data Farm数据集成信数据挖识、服务框智慧配置管理性能管理告警管理数据处理发全管理DataoS hadoop Spark2 STORM(Flink LibrA租户管理灾备管理FusionInsigh解决方案由5个子产品 FusionInsight hD、 Fusioninsight libra、FusionInsight miner、 FusionInsight Farmer和1个操作运维系统 FusionInsight manager构成FusionInsight HD:企业级的大数据处理环境,是一个分布式数据处理系统,对外提供大容量的数据存储、分析查询和实时流式数据处理分析能力。usionInsight HD包括 Zookeeper、 Hadoop、 HBase、 Loader、 HBase、Hive、Hue、 Oozie、 Phoenix、Solr、 Redis、 Spark、 Streaming、 Kafka、E、 Flink等组件。FusionInsight miner:个业级的数据分析平台,基于华为 FusionInsight hd的分布式存储和并行计算技术,提供从海量数据中挖掘出价值信息的平台。FusionInsight Farmer:企业级的大数据应用容器,为企业业务提供统一开发、运行和管埋的平台。Fusionlnsight Manager:企业级大数据的操作运维提供,提供高可靠、安全、容错、易用的集群管理能力,支持大规模集群的安装部署、监控、告警、用户管理、权限管理、审计、服务管理、健康检査、问题定位、升级和补丁等功能FusionInsight librA:企业级的MPP关系型数据库,基于列存储和MPP架构,是为面向结构化数据分析而设计开发的,能够有效处理PB级别的数据量。 FusionInsightLibrA在核心技术上跟传统数据库有巨大差别,可以解决很多行业用户的数据处理性能问题,可以为超大规模数据管理提供高性价比的通用计算平台,并可用于支撑各类数据仓库系统、BⅠ( Business intelligence)系统和决策支持系统,统一为上层应用的决策分析等提供服务。文档版本01(2017-07-30)华为专有和保密信息版权所有c华为技术有限公司华为 FusionInsight hd27技术白皮书1简介12 FusionInsight hD组件介绍数招外析数据集成菜群理款据挖握数据挖掘处理Mahout(on MRMI I ib(on Spark)ahx款什理作业调应DSL领域描述语U。2e枇处互询KV面流式杏诈HiveparksQLRedisStreamcQL批量分市式计算引Loade故障管卫七处理流处理附件处理MapReduceFlinkstorm实时采性能管理分布式资源管Y消思队列安仝售翅Kalka分布式存储雪NOSQL数招库按素引≤QL行惴格式租户管理上传下载FtnonHDFSOROPalyueLCai bun De莫分布式文件系统备份曾理HDFSFusionInsight hd需要对廾源组件进行封裝和增强,对外提供稳定的大容量的数据存储、查询和分析能力。各自组件提供功能如下Manager:作为运维系统,为 I FusionInsight hD提供高可靠、安全、容错、易用的集群管理能力,支持大规模集群的安装/级/补丁、配置管理、监控管理、告警管理、用户管理、租户管理等。HDFS: Hadoop分布式文件系统( Hadoop Distributed File System),提供高吞吐量的数据访问,适合大规模数据集方面的应用。HBase:提供海量数据存储功能,是一种构建在HDFS之上的分布式、面向列的存储系统。Oozie:提供了对开源 Hadoop组件的任务编排、执行的功能。以 Java Web应用程序的形式运行在 Java servlet容器(如: Tomcat)中,并使用数据库来存储工作流定义、当前运行的工作流实例(含实例的状态和变量)。Zookeeper:提供分布式、高可用性的协调服务能力。帮助系统遷免单点故障,从而建立可靠的应用程序Redis:提供基于内存的高性能分布式KV缓存系统。Yarn: Hadoop2.0中的資源管理系统,它是一个通用的资源模块,可以为各类应用程序进行资源管理和调度。Mapreduce:提供快速并行处理大量数据的能力,是一种分布式数据处理模式和执行环境。Spark:基于内存进行计算的分布式计算架Hive:建立在 Hadoop基础上的井源的数据仓库,提供类似SQL的HⅤeQL语言操作结构化数据存储服务和基本的数据分析服务。Loader:基 J Apache Scoop实巩 FusionInsight hD与关系型数据库、p/sp文件服务器之间数据批量导入导出工具:同时提供 Java api/ shell!务调度接口,供第三方调度平台调用。●Hue:提供了开源 Hadoop绀件的 WebUI,可以通过浏览器操作HDFS的目录和文件,调用 Oozie米创建、监控和编排工作流,可操作 Loader组件,査看Zo< eeper集群情况。文档版本01(2017-07-30)华为专有和保密信息版权所有c华为技术有限公司华为 FusionInsight hd27技术白皮书1简介Flume:一个分布式、可靠和高可用的海量日志聚合系统,支持在系统中定制各类数据发送方,用于收集数据;同时,Fume提供对数据进行简单处理,并写入各种数据接受方(可定制)的能力。●Solr:一个髙性能,基于 Lucene的全文检索服务器。Solr对 Lucene进行了扩展,提供比 Lucene更为肀富的查询语言,同时实现」可配置、可扩展,并对查询性能进行了优化,并且提供了一个完善的功能管理界面,是一款非常优秀的全文检索引擎Kafka:一个分布式的、分区的、多副本的实时消息发布-订阅系统。提供可护展、扃吞吐、低延迟、高可靠的消息分发服务Storm:一个分布式、可靠、容错的实时流式数据处理的系统,并提供类SQLtreaInCQL)的查询语言Fink:分布式的、高可用的、能保证 Exactly Once语义的针对流数据和批数据的处理引擎SparkSQL:基于 Spark引擎的高性能SQL引擎,可与Hive实现元数据共享。Mahaut:提供基于 Mapreduce的数据挖掘算法库MLLib:提供基于 Spark的数据挖掘算法库phx:提供基于 Spark的图处理算法库文档版本01(2017-07-30)华为专有和保密信息版权所有c华为技术有限公司华为 Fusionlnsight hd27技术白皮书2重点组件介绍2重点组件介绍21集群管理 Manager22分布式文件系统HDFS2.3统一资源管理和调度框架YARN24分布式批处理引擎 MapReduce2.5分布式数据库 HBase2.6数据仓库组件Hive27分布式内存计算引擎 Spark28全文检索组件Solr2.9批量数据集成 Loader( Scoop)210实时数据采集 Flume2.ll流式事件处理( Storm)212分布式高速缓存 Redis213分布式消息队列 Kafka2.14作业编排与调度 Oozie2.15数据继承入口Hue文档版本01(2017-07-30)华为专有和保密信息版权所有c华为技术有限公司华为 Fusionlnsight hd27技术白皮书2重点组件介绍21集群管理 ManagerManager是 FusionInsight H的运维管理系统,为部署在集群内的服务提供统一的集群管理能力。 Manager支持大规模集群的安裝部署、性能监控、告警、用户管理、权限管理、审计、服务管理、健康检査、日志采集、升级和补丁等功能图2-1 Manager逻辑架构w已妇UP SereIAMCEPPMS匚就动aLdapOM M AgentNode AgentNTP ClerDHTLFusionInsight ManagerFusionInsight Manager由OMS和 NodeAgent组成:●OMS:操作维护系统的管理节点,OMS·般有两个,互为主备。NodeAgen:操作维护系统中的所有被管理节点,每个节点上一个。表2-1业务模块说明模块名称描述Web Service是一个部署在 Tomcat下的web服务,提供 Manager的htts:接口,用于通过浏览器访问 Manager。同时还提供基于 Syslog和SNMP协议的北向接入能力ControllerManager的控制中心,负责汇聚来自集群中所有节点的信息,统一问管理员展示,以及负责接收来自管理员的操作指令,并且依据操作指令所影响的范围,向集群的所有相关节点同步信息nodeAgent存在于每一个集群节点,是 Controller对部署在该节点上组件做切操作的代理。代表本节点上部署的所有组件与 Controller交互,实现整个集群多点到单点的汇聚IAM负责记录审计日志。在 Manager的U上每一个非查询类操作,都有对应的审计日志文档版本01(2017-07-30)华为专有和保密信息版权所有c华为技术有限公司华为 Fusionlnsight hd27技术白皮书2重点组件介绍模块名称描述PMS性能监控模块,搜集每一个OMA上的性能监控数据并提供査询CEP汇聚功能模块。比如将所有OMA上的磁盘已用空间汇总成一个性能指标FMS告警模块,搜集每一个OMA上的告警并提供查询OMMAgent各节点上面性能监控和告警的Agen,负责收集该 Agent Node上的性能监控数据和告警数据CAS统一认证中心,登录 Web service时需要在CAS进行脊录认证,浏览器通过URL自动跳转访问CASAOS权限管理模块,管理用户和用户组的权限OMS Kerberos提供单点登录及 Controller与 Nodc agent间认证的功能OMS Ldap在集群安装前为用广认证提供数据仔储,在集群安装后作为集群中Ldap的备份DatabaseManager的数据库,负责存储配置、监控、告警等信息NTP负责集群内部各节点与OMS节点之向的时钟同步和OMS节点与外部时钟源之间的时钟同步。22分布式文件系统HDFSHDFS是 Hadoop的分布式文件系统,实现大规模数据叮靠的分布式读写。HDFS针对的使用场景是数据读写具有“一次写,多次读”的特征,而数据“写”操作是顺序写,也就是在文件创建时的写入或者在现有文件之后的添加操作。HDHS保证一个文件在个时刻只被一个调用者执行写操作,而可以被多个调用者执行读操作。图2-2分布式文件系统HDFSHDFS ArchitectureMetadata(Name, re)Metadata. opsNamenode/home/foo/data. 3Black opsRead DatanodesDatanodesReplicationBlocksRack 1WriteRack 2文档版本01(2017-07-30)华为专有和保密信息版权所有c华为技术有限公司

文档是STM32F103VET6的最小系统板原理图，JTAG，FLASH等。

用QT写的五子棋AI，进攻和防守势力都不错，单机AI，界面美观。

此工具箱为 .m文件的Matlab源代码，直接拷贝toolbox根目录，添加路径即可使用，具体EMD,HHT下载安装步骤在我个人博客有介绍，祝好。 www.cnblogs.com/BrowserSnake

用来转换.json文件，不用手动的去操作，只需放在json文件目录下，运行即可