c++写的fcm算法程序

详细介绍了时间序列建模及预测过程，包括算法，也包括一些matlab工具箱中的代码计算结果表明,时,预测的标准误差较小,所以选取=。预测第月份的销售收入为计算的程序如卜为移动平均的项数由于的取值不同,的长度不一致,下面使用了细胞数组简单移动平均法只這合做近期预测,而且是预测目标的发展趋势变化不人的情况如果目标的发展趋势存在其它的变化,米用简单移动屮均法就会产生较大的预测偏差和滞后。加权移动平均法在简单栘动平均公式中,每期数据在求平均时的作用是等同的。但是,每期数据所包含的信息量不样,近期数据包含着更多关于未来情况的信息。因此,把各期数据等同看待是不尽合理的,应考虑各期数据的重要性,对近期数据给予较大的权重,这就是加权移动平均法的基本思想。设时间序列为加权移动平均公式为十·十∴+式中为期加权移动平均数;为的权数,它体现了相应的在加权平均数中的重要性。利用加权移动平均数来做预测,其预测公式为即以第期加权移动平均数作为第+期的预测值。例我国年原煤广量如表所示,试用加权移动平均法预测年的产量。表我国原煤产量统计数据及加权移动平均预测值表原煤产量三年加权移动平均预测值相对差(%)解取,按预测公式计算三年加权移动平均预测值,其结果列于表中。年我国原煤产量的预测值为(亿吨这个预测值偏低,可以修正。其方法是:先计算各年预测值与实际值的相对误差,例如年为将相对误差列于表中,再计算总的平均相对误差。由于总预测值的平均值比实际值低,所以可将年的预测值修正为计算的程序如下:在加权移动平均法中,的选择,同样具有一定的经验性。一般的原则是:近期数据的权效人,远期数据的权数小。至于人到什么稈度和小到什么程度,则需要按照预测者对序饥的了解和分析来确定。趋势移动平均法简单移动平均法和加权移动平均法,在时间序列没有明显的趋势变动时,能够准确反映实际情况。但当时间序列出现直线増加或减少的变动趋势时,用简单移动平均法和加权移动平均法来预测就会岀现滞后偏差。因此,需要进行修正,修正的方法是作二次移动平均,利用移动平均滞后偏差的规律米建立直线趋势的预测模型。这就是趋势移动平均法。次移动的平均数为+∴在一次移动平均的基础上再进行一次移动平均就是二次移动平均,其计算公式为D下面讨论如何利用移动平均的潛后偏差建立直线趋势预测模型。设时间序列从某时期开始具有直线趋势,且认为末来时期也按此直线趋势变化,则可设此直线趋势预测模型为其中为当前时期数;为由至预测期的时期数;为截距;为斜率。两者又称为平滑系数现在,我们根据移动平均值来确定平滑系数。由模型()可知所以+…十因此由式(),类似式()的推导,可得所以类似式()的推导,可得于是,由式()和式()可得平滑系数的计算公式为例我国年的发电总量如表所示,试预测和年的发电总量。表我国发电量及一、二次移动平均值计算表年份发电总量次移动平均二次移动平均,=解由散点图可以看出,发电总量基本呈直线上升趋势,可用趋势移动半均法来预测。图原始数据散点图取三,分别计算次和二次移动平均值并列于衣中。再由公式(),得于是,得时直线趋势预测模型为预测年和年的发电总量为计算的程序如下:把原始数据保存在纯文本文件中为移动平均的项数趋势移动平均法对于冋时存在直线趋势与厝期波动的序列,是种既能反映趋势变化,又可以有效地分离出来周期变动的方法。§指数半滑法次移动平均实际上认为最近期数据对未来值影响相同,都力权一;而期以前的数据对未来值没有影响,加权为。但是,二次及更高次移动平均数的权数却不是—,且次数越高,权数的结构越复杂,但永远保持对称的权数,即两端项权数小,中间项权薮大,不符合一般系统的动态性。一般说来历史数据对未来值的影响是随时间间隔的增长而递减的。所以,更切合实际的方法应是对各期观测值依时间顺序进行加权平均作为预测值。指数平滑法可满足这一要求,而且具有简单的递推形式指数平滑法根据平滑次数的不同,又分为一次指数平滑法、二次指数平滑法和三次指数平滑法等,分别介绍如下次指数平滑法.预测模型设时间序列为,a为加权系数,

[费曼物理学讲义].feynman_chinese_book_1.pdf

常见气象数据格式解析，NC数据的读取方法，代码相对比较全

自创程序，修改过，循迹小车比赛决赛用过的程序，超级稳定过连续弯，速度快，上一个程序发错了发的是测试版，这次是真正比赛时用的，效果非常好，感兴趣的可以下载学习一下，里面有不一样的思路，完全独创。可能会有一些注释不太准确，因为来不及修改，不过，不看注释应该也看得懂的。

【实例简介】

基于压缩感知信道估计算法，为IEEE已发文章代码，调试正确，可供大家参考！主要包括以下代码：channel.mLS_MSE_calc.mMMSE_MSE_calc.mMSE_com.momp.mseqnum_compare.m

Inside_NAND_Flash_Memories.pdfRino micheloni· Luca Crippa· Alessia marelliInside nand flashMemoriesSpringerRino micheloniLuca CrippaIntegrated Device TechnologyForward InsightsAgrate BrianzaNorth yorkItalCanadarino. micheloni@ieee. orgluca.crippa @ieee.orgAlessia marelliIntegrated Device Technologyagrate brianzaItalylessiamarelli@gmail.comISBN97890-481-9430-8e-ISBN97890-481-9431-5DOI10.1007/978-90-481-9431-5Springer Dordrecht Heidelberg London New YorkLibrary of Congress Control Number: 2010931597O Springer Science+Business Media B.V. 2010No part of this work may be reproduced, stored in a retrieval system, or transmitted in any form or byany means, electronic, mechanical, photocopying, microfilming, recording or otherwise, without writtenbeing entered and executed on a computer system, for exclusive use by the purchaser of the wor Ose ofpermission from the Publisher, with the exception of any material supplied specifically for the purpoCover design: eStudio Calamar SLPrinted on acid-free paperSpringerispartofSpringerScience+businessMedia(www.springer.com)PrefaceIn the last decade Flash cards became the most important digital storage supportIt is difficult to identify a single killer application(digital photography, MP3digital video, ...)or whether the success of this media support is due to itsusability in different applications. It is also difficult to state whether the recentlution in the infotainment area has been triggered by the availability of high-performance NAND Flash memories or if the extraordinary success of Flash cardsis a consequence of the establishment of new applicationsIn any case, independently of the cause-effect relationship linking new digitalapplications and Flash cards, to realize how NANd Flash memories entered in ourdaily life, it is sufficient to imagine as they would change our recent habits if theNAND memories disappeared suddenly. To take a picture it would be necessary tofind a film (as well as a traditional camera .), disks or even magnetic tapes wouldbe used to record a video or to listen a song, and a cellular phone would return tobe a simple mean of communication rather than a console for an extendedentertainmentThe development of nand Flash memories will not be set down on the mereevolution of these digital systems since a new killer application can trigger a furthersuccess for this memory support: the replacement of Hard Disk Drives(HDD)with Solid State Drives (SSD)The advantages of Ssd with respect to HDD are countless(higher read/writspeed, higher mechanical reliability, random access, silent operation, lower powerconsumption, lower weight, .. ) Nevertheless, the cost per gigabyte is stillsignificantly favorable to hDd and the success of ssd will depend only on theperformances that they will succeed in reachingThe present book, the fourth authored by rino micheloni and coworkers afterVLSI-Design of Non-volatiles Memories, Memories in Wireless Systems and ErrorCorrection Codes for Non-volatile Memories, all published by Springer, tacklesall the main aspects related to NANd Flash memories, from the physicaltechnological, and circuit issues to their use in Flash cards and SsdsAfter an extended market overview(Chap. 1), Chap 2 has been conceived as aguide for the entire book, so that the reader can directly reach the heart of theproblems that interest himThe following chapters deepen physical and technological aspects. In particularChaps. 3 and 4 tackle technological and reliability issues of traditional FloatingGate NAND memories, respectively, while the state-of-the-art of charge trappingtechnologies is effectively summarized in Chap 5Ⅴ i PrefaceThe central part of the book is dedicated to circuit issues: logic( Chap. 6),sensing circuits(Chaps. 8 and 9)and high voltage blocks( Chaps. 1l and 12)Other basic topics related to circuit aspects are also analyzed, such as theimplementation of Double Data Rate interfaces( Chap. 7), while multilevel storage(2 bits per cell) is presented in Chap. 10Techniques adopted to increase memory reliability and yield are discussedin Chaps. 13 and 14, the former dealing with redundancy, the latter with ErrorCorrection Codes. The test flux used by nand memories manufactures is describedin Chap 15Chapter 16 focus on nand devices storing 3 and 4 bits per cell that allowreaching the lower cost per gigabyte and that will conquer, in the next few years,the market of consumer applicationsThe last chapters are dedicated to the two most popular systems based onNAND memories: Flash cards( Chap. 17)and SsD(Chap. 18). The relationshipbetween Nand memories and system performances are highlightedFinally, Chap. 19 describes the effects of ionizing radiations on non-volatilememories, to understand whether NaNd memories can be safely used in spaceand military applicationsProf. Piero olivoDean of the Engineering FacultyUniversity of ferrara, ItalyAcknowledgementsAfter completing a project like a technical book, it is very hard to acknowledgeall the people who have contributed directly or indirectly with their work anddedicationFirst of all, we wish to thank all the authors of the contributed chaptersWe have to thank mark de Jongh for giving us the possibility of publishing thiswork and cindy zitter for her continuous supportLast but not least, we keep in mind all our present and past colleagues for theirsuggestions and fruitful discussionsRino. Luca and alessiaTable of contentsPrefaceAcknowledgementsvIII Market and applications for nand Flash memoriesGregory Wong2 NAND overview: from memory to systemsR. Micheloni, A Marelli and S. Commodaro3 Program and erase of Nand memory arrays55Cristoph Friederich4 Reliability issues of NAND Flash memoriesC. Zambelli. a. Chimenton and p. olivo5 Charge trap nand technologies115Alessandro grossi6 Control logic131A Marelli.R Micheloni andR. ravasio7 NAND DDR interface161Andrea silvagni8 Sensing circuits197L. Crippa and R. micheloni9 Parasitic effects and verify circuits235L. Crippa and R. michelonO MLC Storage261L Crippa and R Micheloni11 Charge pumps, voltage regulators and HV switchesR Micheloni and L Crippa

Halcon机器视觉编程算子详解，对于新手入门和高手查询都很有帮助。资料中有常用的算子中文说明和算子用法，欢迎广大通道中人一起学习交流，提高机器视觉的技能，走向人生巅峰

内点法的机组组合程序，采用不可行内点启动的原对偶线性规划内点法，采用了稀疏技术

用matlab写的，用于孤立点提取的函数