电磁场时域计算方法

PT100温度变送器的正温度系数补偿的计算方法、查找表。使用连接方式，补偿电路等。

C语言编写的腐蚀膨胀开闭运算算法，比较简单，适合入门

自己制作的数据集，用于无人机巡检环境下的目标检测与识别，数据集共1052张图片，一共分为四类（树木，电力塔架，四旋翼，房屋）。严格按照voc2007格式制作，直接用与深度学习目标检测与识别算法（faster rcnn，yolo等）的训练。这是第二部分，后552张，前一部分分开上传。

转子动力学分析相关的计算代码，附带学习教程，有软件，例子，值得学习。

GPRS通信模块和STM32，使用串口相连实现远程通信。

圆阵波束形成 包括时延，相移，频域波束形成相关知识

本人MIMO系统课程设计，不同信噪比，收发天线组合下信道容量仿真，全，简单，帮助你了解MIMO系统

在电力电子装置中的一个重要组成部分,输入连接到控制电路的PWM信号输出端，输出连接到装置各IGBT的门极和发射极，将装置中的控制电路产生的数字PWM信号进行隔离传输和电平转换和功率放大,实现控制电路对IGBT进行开通和关断动作的控制，从而实现装置的功率变换功能。InfineontechnologiesIGBT Gate Drive: Power Suppliesa Gate driving voltage for IGBT+15Vturn-on is normally +15VDriver>□1a Gate driving voltage for IGBTOVturn-off can be oV or negativeWith Single Power Supply5V to-15V)a Negative gate driving voltage+15Vhelps IGBt switch off fasterremain in off state but itDriverneeds dual power suppliesOVWhether to use oV or negativegate driving voltage depends15VWith Dual Power Supplieson the requirement on costZH Liang - Al APperformance05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: InterfaceOpto-couplers is commonly used as interfacingdevices for applications where both signaltransmission and potential isolation are requiredOpto-couplers offers reliable isolation between IGBT(high-potential)& micro-controller(low-potential)Opto-couplers has long signal delay(us)and isexpensiveIsolation +VDpCCMicroDrivercontrollerZH Liang - Al AP05Dec2003Page 6for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Half-bridge DriveStandard configuration: 2 drivers, 2 power supplies, 2 opto-couplersAdvantages: standard, reliableDisadvantages: using opto-couplers, higher system costIsolation +VDDlCC1DriverCC1MicrocontrollerDD2+VCC2DriverCC2ZH Liang - Al AP05Dec2003Page 7for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Half-bridge DriveIn half-bridge IGBT drive, opto-couplers offer two functions(1)safety isolation &(2) shifting the potential of the gatesignal from uc potential to high-side potentialIf safety isolation between IGBT& micro-controller is notneeded, then"Level Shift" can replace opto-coupling andrealize function(2)OptoHigh-sideHigh-sidecouplerDriverIGBTMicro-Opto-LoW-sideLow-sidecontrollercouplerDriverIGBTZH Liang - Al AP05Dec2003Page 8for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive Level shiftI FeaturesHVc(600V/1200V)沿PULSERFILTERShort Signal DelayPULSE■Cost- effectiveGEN■ No Safety Isolationevel Shift Half-bridge DriverI BenefitHigh-side““°IGBTO Saving Opto-couplersLevel(lower system costShiftMicro● Wider range ofcontrollerLevelLow-side■■■■■直■口m留■Switching FrequencyShiftIGBT(higher flexibility)ZH Liang - Al AP05Dec2003Page 9for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: CLTNEWO CLT-Coreless Transformer (for signal transmissionu Coils(Primary Secondary Side)realized on SiliconO Short Signal Delay (allowing high or low switching frequencyu Lower Cost(compared to 1200V level-shift driver日 Safety IsolationCLT Half-bridge DriverHigh-sideCLT Single DriverIGBTCLTMicro-controllerCLTIGBTMicro-controllerLoW-sideIGBTZH Liang - Al AP05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Boot-strapBoot-strap circuit includes only a diode and a capacitora In half-bridge drive, the boot-strap circuit can replace the high-sidepower supply and make single-supply operation possibleWhen the low-side IGBT (or FWD)is on, the diode is forwardbiased and the capacitor is charged by the low-side power supplyvia the low-side IGBT and stores the energyWhen the low-side IGBt(and FWD)is OFF, the diode is reversebiased and blocks the dc-bus voltage to protect the low-sidecircuit. Meanwhile, the capacitor supplies energy to the high-sidedriverThe boot-strap capacitance should be high enough to keep thesupply voltage stable Capacitance needed can be calculatedbased on the working conditions and device parametersZH Liang - Al AP05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Boot-strap circuitConventional2心菲*|■3 high-side power supplies■1|oW- side power supplyUsing boot-strap circuit心体心心●3 diodes& capacitorso 1 low-side power supplyFeaturesa Diode: ultra-fast recoverya Capacitor: general-purposed ITAa Dependent on low-side IGBTBenefitsSaving 3 PS(transformer cost)22ZH Liang - Al AP05Dec2003Reducing wiring connectionPage 12for internal use onlyInfineon Technologies Asia Pacific

ceemd分解，还是很不错的，先将数据精心ceemd分解，得到imf分量，然后通过相关系数帅选分量，在求出他们的样本熵的特征，完美运行，你值得拥有，可以的话，给一个好评，谢谢。

QT实现的可动态添加、删除控件的小项目；当添加控件达占满widget时，自动添加滚动条效果，并提供了一个删除功能，删除你添加到widget里的控件。控件可以是任何的大小的QWidget.