draw_partition

说明：  对未来的人口数量进行一定的预测，采用的是阻滞增长模型(Predict the future population)

瞬时混合盲信号分离问题的自适应算法比较。 有论文，有程序，自己写的，有输入波形，有输出结果，适合完成学习盲分离。(Instantaneous Blind Signal Separation Mixed Adaptive Algorithm for comparison. A paper, a procedure that he wrote with input waveforms, the results are output for the completion of learning blind source separation.)

电力系统的潮流计算 用牛顿拉夫孙法进行matlab潮流计算(Power flow calculation method matlab Newton Musharraf flow calculation Sun)

包含了各种matlab数字图像处理的小程序 (Contains a variety of digital image processing matlab applet)

在基于核的meanshift算法框架下，利用kalman算法实现目标模型更新，从而有效的实现运动目标跟踪(In core based meanshift algorithm framework, using Kalman algorithm to achieve the target model update, so as to effectively realize the moving target tracking)

说明：  MATLAB的300个应用实例，对初学者极有帮助，有益于掌握MATLAB的各种工具。(MATLAB Application of 300, very helpful for beginners, good for a variety of tools to master MATLAB.)

这个程序主要针对信号的调制与解调进行的编程，感觉很实用。(This program targeted signal modulation and demodulation for the program, feeling very practical.)

支持4到16bit 的m序列的MATLAB源码。输入寄存器长度M_Len，输出2.^M_Len-1长度的寄存器状态值向量(4 to 16bit support of the MATLAB m sequence source. M_Len input register length, the output 2. ^ M_Len-1 length of the state vector register)

nine mode prediction used in intra prediction compression.

说明：  若锗中含有一定数量的杂质元素Sb，试根据要求分析杂质浓度与电离度以及电离温度之间的关系： （1）当Sb浓度分别为 和 时，计算杂质99％，90％和50％电离时的温度各为多少？ （2）根据一定杂质类型和杂质浓度，画出电离度和温度的关系图线，并确定半导体处于强电离区（电离度>90％）的温度范围。 设计要求：（1）具有友好输入输出界面； （2）调整输入数据，得出相应结果，并进行分析。 (If the germanium containing a certain number of impurity elements Sb, test analysis in accordance with the requirements of impurity concentration and ionization degree, as well as the relationship between the ionization temperature: (1) When the Sb concentration and time were calculated 99 percent of impurities, 90 and 50 ionization When the temperature of each number? (2) according to certain types of impurities and impurity concentration, ionization degree and temperature to draw the relationship between the graph lines, and to determine the semiconductor in a strong ionization zone (ionization degree)