一个AB PID 例子

微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221

本资源是利用Java语言编写，实现了基本的加减运算。可以选择每次做的题目的个数。

物联网是新一代信息技术的重要组成部分。物联网的英文名称叫“The Internet of things”。顾名思义，物联网就是“物物相连的互联网”。这有两层意思：第一，物联网的核心和基础仍然是互联网，是在互联网基础上的延伸和扩展的网络；第二，其用户端延伸和扩展到了任何物体与物体之间，进行信息交换和通信。因此，物联网的定义是：通过射频识别（RFID）、红外感应器、全球定位系统、激光扫描器等信息传感设备，按约定的协议，把任何物体与互联网相连接，进行信息交换和通信，以实现对物体的智能化识别、定位、跟踪、监控和管理的一种网络。

leach 改进算法 wsnmatlab编程 无线传感器网络，分簇算法

swmm5.dll的生成，以及C#程序调用swmm5.dll，可以进行模拟计算以及读取Output文件中的结果

VB画函数，能画一次函数、二次函数、三次函数、反比例函数和三角函数

本文档是根据传智播客C++学院视频教程，进行学习整理。吴英强专注于C/C++ Android, Linux,ARM技术博客http://blog.csdn.net/waldmer文档声明:版本说明:目录:0723.32位与64位调戏窗口程序.….2229993数据分离算法内存检索二分查找法myc90724堆栈简介、内存完成篇.静态区、内存完成篇…-25-多线程-280725-32-内存补码分析∴32补码原码实战.-33-打印整数二进制数据.34-静态库说明·利用 detours劫持-36072641cpplDe.................41级指针41指针数组函数指针/函数指针数组二级指针…0728数组与指针51数组与指针2··…··+·4······;.···44····+······-54-内存分配数据结构数组接口与封装∴,-610729.74字符串查找74语音识别.4Const关键字宇符串应用48内存分配以及处理海量数据.……………850730-89-网站以及后门.中,垂结构体对齐、结构体面试分析.-90-深拷贝与浅拷贝队列92字符串封装…-950801-105欢迎交流,互相学习。吴英强专注于C/C++ Android, Linux,ARM技术博客http://blog.csdn.net/waldmer重定向以及文件扫描.∴-105-进制加密解密-108简单加密按照密码加密…118动态库与静态斥-1220802,……,………125链式栈…链表队列以及优先队列.129-封装链表库135-0804-142C语言和设计模式(继承、封装、多态)-142-世界五百强真题训练∴146-0805...:..146面试题1-100146语音识别控制QQ.………………-146语音控制游戏-157-0813-164-C与CPP不同以及命名空间简介-164-函数重载与函数默认参数-166-泛型auto-168-Newdelete-1690814-173引用高级、引用高级增加.auto自动变量自动根据类型创建数据…Enum-178newdelete全局179大数据乘法与结构体-181函数模板与auto自动变量.-185-宽字符本地化inline内联函数188CCPP不同189-0815;。.∴……-193-函数包装器管理内嵌函数…∴…………-193-函数包装器管理外部函数.-195-函数模板根据类型覆盖.…….….-195CPP类型转换四种cast-199-函数模板重载调用规则-200-函数可变参数通用类型模板函数cpp新数组202高级数组 array. vector.-203欢迎交流,互相学习吴英强专注于C/C++ Android, Linux,ARM技术博客http://blog.csdn.net/waldmerLambda [ret]int x)XXX; I-206动态不规则数组以及增删查改-208-动态数组任意位置插入211多元数组 tuple212new限定区域分配内存的语法-213-函数模板重载-214引用包装器stde(变量)215-仿函数转义字符R”(-217-usng别名模板元编程比递归优化218智能指针∴-220多线程221静态断言以及调试技能的要求 assert-222-0817···-224-递归汉诺塔双层递归-224CPP结构体224面向过程与面向对象的编程模式··,··+···,-226类的常识共用体实现一个类的特征QT应用于类以及类的常识-2310819-234-类的成员函数与 const- mutable构造与析构-237-拷贝构造 deletedefault以及深浅拷贝.静态成员函数成员变量类在内存的存储默认参数..-243-友元类以及友元函数247画图-248-0820···*·;,一Nullptrconst对象类指针引用以及 mallocfree与 newdelete差别250-简单QT界面信号图形化输入输出…-253-类重载运算符-253-QT加法重载类的重载赋值运算复合赋值运算关系运算元重载.256自增在前在后差别···+······∴-261赋值重载深浅拷贝重载下标…∴-269-画图2700822类型转换函数与构造转换函数类的继承类的继承以及区别.-279欢迎交流,互相学习。吴英强专注于cC++ Android, Linux,ARM技术博客http://blog.csdn.net/waldmer继承静态成员与静态函数-280继承实现代码重用281单继承QT案例284多继承简介以及实战继承以及作业安排……,-289-画图.-292-08233静态联合编译与动态联合编译293-类与类指针父类子类交错..-295-父类指针了类指针释放………-295虚函数∴-299-纯虚函数概念以及虚析构函数-303抽象类与纯虚数以及应用∴304虚函数原理-309虚函数分层以及异质链表310-类模板的概念以及应用0825.316类模板…··············4final override322类模板与旾通类的派生类模板虚函数抽象模板类..-323类模板友元………326-位运算算法以及类声明…327类模板与友元函数友元类-331类模板当作类模板参数333static与类模板-334-类嵌套以及类模板嵌套336Rttⅰ实时类型检测337高级new创建-340类以及函数包装器-341类成员函数指针-3430826文件重定向346键盘输入流.-347屏幕输岀流/实数整数输出/格式控制348字符串输入输出.-351-文件读写简单操作/文件读写按行读写扫描读写-355OSQT358字符文件读写二进制与文本差别.-358-get与 getline挖掘数据.….-359-二进制与文本差别-361-二进制文件读写-362-随机位置文本二进制读写…363多线程初级0828-371欢迎交流,互相学习吴英强专注于C/C++ Android, Linux,ARM技术博客http://blog.csdn.net/waldmersTL入门与简介371STL容器概念容器迭代器仿凶数算法STL概念例子.栈队列双端队列优先队列380数据结构堆的概念……∴386-红黑树容器386-0829394位容器 multimapmutisetstring…394-算法函数兰不达表达式以及类重载401GpU编程….…………-4020830∴-407-不达表达式7sπL算法-操作数据-409-0831类与对象的异常416血试100题1-100……………-4220901422各忘录模式.-422-策略模式.,…,,………………-424-抽象工∴-426-工厂方法模式.∴431简单工厂模式433代理模式-436-单例模式-438-迭代器模式-439-访问者模式观察者模式43建造者模式-446-解释器模式………-4148-命令模式-450-模板模式∴453-桥接模式.454适配器模式-456-外观模式.卓·:··4∴-459-亨元模式-460原型模式462责任链模式···+···········∴-464-中介者模式467装饰模式470状态模式471组合模式4740903...,…-478-数据结构与算法概念与学习方法boost模板库与线性表…478欢迎交流,互相学习。吴英强专注于C/C++ Android, Linux,ARM技术博客http://blog.csdn.net/waldmer线性表顺序存储.∴-479线性表链式存储-487索引存储-496-哈希存储.-4960904..-499-boost array bind_ fun ref………-499-boost智能指针-503-boost多线程锁定…509-哈希库.510正则表达式·················:··-511-0905boostsocketTcPUdp512虚数表的调用复杂表达式906.521递归转栈….…521二叉树实现5240907-533-象棋五子棋代码分析.∴-533-寻找算法以及排序算法537欢迎交流,互相学习。吴英强专注于C/C++ Android, Linux,ARM技术博客htt:// blog. csdn.net,/ waldner072332位与64位地址与内存的关系4G=4*1024M=4*1024*1024k=4*1024*1024*1024Byte字节=2~3232位,指针就是4个字节#include void mainont num = 10printf("%p",&num);t*p=&numprintf(p=%d sizeof(p));getchar(调戏窗口程序使用黑客工具,spy,找到/ Findwindow参数:窗口类名,标题#include #include#ⅰ nclude< Windows. h>欢迎交流,互相学习。吴英强专注于C/C++ Android, Linux,ARM技术博客http://blog.csdn.net/waldmer窗口隐藏的时候,可以从任务管理器中,看到此进程已经运行,使用cmd命令中的命令,把进程结束掉C: Userswuyingqiang>taskkill /f/im notepad.exe成功:已终止进程" notepad. exe",其PID为7556成功:已终止进程" notepad. exe",其PID为1384成功:已终止进程" notepad.exe",其PID为3572成功:已终止进程" notepad.exe",其PID为5272。成功:已终止进程" notepad.exe",其PID为6212void open Calco//int i=0/for(;i

图片尺寸批量调整,图片批处理,JPG图片大小批量调整非常好用的一个工具比如相片太大,可以用这个工具调整后再传到网上

【实例简介】WinEdt 是一个文本和程序编辑器,它 1. 是一个功能强大灵活广为使用的文本及程序编辑器 2. 为TEX和LATEX独身定做了一个交互式用户界面 3. 可任由你开发符合需要的界面,我们现在使用的R语言的编程调试环境就是一个优秀的例子! 4. 具有语法高亮显示功能,而且可以根据你的环境定制 5. 具有多语言的拼写检查功能

代码亲测可用，直接调用stoi函数，格式是stoi(x,y,fs)，分别是干净语音，带噪语音，采样频率