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微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221

FPGA应用技术基础教程-刘岚-pdf-494页写的真的很详细, 对新手是很有用的讲义(494页)下载后就可以不用买书看了, 可以省去￥35.0元http://www.hxedu.com.cn/hxedu/bookDetail?bid=G0087020若是想要ppt档, 可以参考以下的网址FPGA应用技术基础教程-刘岚-9 ppthttp://download.csdn.net/source/226054101-FPGA概述02-FPGA设计基础03-FPGA开发平台04-仿真与设计工具安装05-ISE应用基础实验06-ChipScope应用基础实验07-SOP

完整python项目，可以自己运行。利用python爬虫 爬取今日头条后台数据。然后使用flask框架 实现自己的后台 ，通过爬虫获取 今日头条数据。html实现前端 显示数据。网站UI一级界面自己实现，仿照今日头条网站

基于51单片机射频密码锁设计门禁刷卡开锁系统射频卡IC卡电子制作，资料齐全,包含代码、PCB、论文、原理图等等，亲测可用

语音识别的dtw算法matlab实现 特定人识别

本资源利用MCGS组态软件来模拟实现四层电梯的控制，运行。PLC WORLD处理器为核心,综合了计算机控制、自动化、通讯网络等技术的一种通用的工业控制装置。PLC电梯控制系统有如下的特点:(1)、PLC是基于工业环境下设计的控制装置,环境适应性强,可靠性高;(2)、PLC最常用的编程语言是梯形图语言,编程语言形象、直观,编程筒单,便于广大现场工程技术人员掌握。(3)、門C控制系统的体积小,重量轻,便于安装,维修方便。(4)、PLC具有自诊断、故障报警、故种类显示等功能,可以方便的实时监视系统的运行状态。(5)、现代PLG具有传统控制系统无法比拟的远程数据传送、交换、控制和监枧的网络通讯功能。1.2系统结构和控制器选型电梯的PLC控制系统的结构如图1所示,主要硬件包括:可编控制器PL0、变频器、光电旋转编码器、轿厢操纵盘、厅外呼梯盘、门机及其他电气元件等。轿箱历外上位积操纵呼梯盘组态监控楼层显示申行接入部PLC部分串行接口2分门机编拽引机变频器码器图1系统结构图PLC WORLD1.3本次实习所选用的PLG机型?以及编程软件?S7-200可编程控制器是德国西门子公司研制的一种新型可编程控制器。它工作可靠,功能极其强大,存储容量大,编程方便,输出端可直接驱动2A的继电器或接触器的线圈,抗干扰能力强。因此,能够满足电梯对电气控制系统的要求。S7-200系列小型PG( MicroPL0)可应用于各种自动化系统。紧凑的结构,低廉的成本,强大的功能使得它成为各种小型控制任务的理想解决方案。在本次设计中,利用它编写控制一个四层楼电梯的控制系统分别完成轿厢内指令,厅外召唤指令,楼层位置指示,开门控制等任务STEP7WN32是S7-200系列的PLG编程软件,可以对S7-200的所有功能进行编程。该软件在 Windows平台上运行。其基本功能是协助用户完成应用软件任务。例如:创建用户程序,修改和编辑过程中编辑器具有简单的语法检查功能。还可以直接用软件设置PG的工作方式,参数和运行监控2.四层楼电梯模拟控制的设计控制要求(1)开始时,电梯处于任意一层。(2)当有外呼电梯信号到来是,轿厢响应该呼梯信号,达到该楼层时,轿厢停止运行,(轿厢门打开,延时3秒后自动关门)(3)当有内呼电梯信号到来是,轿厢响应该呼梯信号,达到该楼层时,轿厢停止运行,(轿厢门打开,延时3秒后自动关门)(4)在电梯轿厢运行过程中,即轿厢上升(或下降)途中,任何反PLC WORLD方向下降(或上升)的外呼信号均不响应,但如果反方向外呼梯信号前方再无其他内、外呼梯信号时,则电梯响应该外呼梯信号。例如,电梯轿厢在一楼,将要运行到三楼,在次过程中可以响应二层向上的外呼梯信号,但不响应二层向下的外哗梯信号。当到达三层,如果四层没有任何呼梯信号,则电梯可以响应三层向下外呼梯信号。否则,电梯将继续运行至四楼,然后向下运行响应三层向下外呼梯信号(5)电梯具有最远反向外呼梯功能。例如,电梯轿厢在一楼,而同时有二层向下呼梯,三层向下呼梯,四层向下外吇梯,则电梯轿厢先去四楼响应四层向下外呼梯信号。(6)电梯未平层或运行时,开门按钮和关门按钮均不起作用。平层且电梯轿厢停止运行后,按开门按钮轿厢开门,按关门按钮轿厢关门。3.I/0点的分配如下10.0S4四层内呼|10.7U1层上呼10.1S3层内呼11.0U2二层上呼10.2S2二层内呼11.1U3三次上呼10.3S1层内呼11.2SQ1层限位PLC WORLD10.4D4四层下呼11.3SQ2二层限位10.5D3层下呼11.4SQ3三层限位10.6D2二层下呼11.5SQ4四层限位Q0.0L4轿厢在四Q1.0SL2内呼二层层指示Q0.1L3轿厢在三Q1.1SL1内呼一层层指示Q0.2L2轿厢在二Q12外呼一层层上指示00.3L1轿厢在一Q1.3UP2外呼二层层上指示Q0.4DOWN轿厢上行Q1.4UP3外呼三层上指示Q0.5UP轿厢下行Q1.5DN2外呼二层下指示00.6sL4内呼四层Q1.6dn3呼三层指示下指示Q0.7内呼三层Q1.74外呼四层指示下指示4.PLC编程程序如下:4.1指令表:PLC WORLDsgLDsa22sq33sq1414Dsq0LD MO. 50MO. 4ALDLDSg2sq10MO. 5LDMO. 7M0. 6ALDOLDM2.0PLC WORLDsgdownLDMO. 7MO. 6ALDLD14sqdownM0. 6DMO. 5MO. 4ALDOLDM2.1MO. 2ANM3.0ownsq2sa3ANg4OLDPLC WORLDM3.3sg3sa2qAN MO. 5AMO. 7M2.0M3.3LDN MO. 2ANM2.7LDn sq 1AN213sqOLDM3.4g40sa3PLC WORLDsq200AAdownM0. 6MO. 3MO. 4LDM2.1M3.6OLDM3.4downd4sq4AL0ADd3sq3OLD20d22OLDusq

IQmath 中文手册、、德州仪器 (TI) TMS320C28x IQmath 库是一个高度优化和高精度的数学函数库集，供 C/C++ 程序员将浮点算法植入 TMS320C28x 器件上的定点代码。这些例程通常用于计算密集型实时应用，最佳执行速度和高精确度是这些应用的关键。通过使用这些例程，您可以获得比使用标准 ANSI C 语言编写的等效代码更快的执行速度。另外，通过提供即用型高精度函数，TI IQmath 库可以显著缩短 MCU 应用开发时间。

【实例简介】开关电源输入EMI滤波器设计与仿真pdf,

该系统可用于毕业设计，可以直接运行，分为学生登录和管理员登录两大模块，学生登录后即可以进行考试，结束考试以后便可以查看考试的分数。管理员登录后可以添加题库和设置考试的模式。功能比较实用，给需要帮助的朋友。

【实例简介】英文简历模板（毕业生）