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Visual C++ +SQL Server数据库应用实例完全解析首先详尽介绍了使用Visual C++和SQL Server开发数据库应用程序应具备的各项技术,然后详细介绍了7个流行的系统的开发实例。在本书光盘中还为每个实例制作了PPT文件,详细介绍和演示实例所需的实用技术和开发过程,方便读者学习使用。本书案例贴近实际,内容精炼,适合大中专院校的学生和软件开发人员参考使用。图书目录：第1章 数据库编程实用技术 11.1 SQL Server数据库管理 11.1.1 企业管理器 11.1.2 创建数据库 21.1.3 创建表 21.1.4 创建视图 51.1.5 备份和

Inside_NAND_Flash_Memories.pdfRino micheloni· Luca Crippa· Alessia marelliInside nand flashMemoriesSpringerRino micheloniLuca CrippaIntegrated Device TechnologyForward InsightsAgrate BrianzaNorth yorkItalCanadarino. micheloni@ieee. orgluca.crippa @ieee.orgAlessia marelliIntegrated Device Technologyagrate brianzaItalylessiamarelli@gmail.comISBN97890-481-9430-8e-ISBN97890-481-9431-5DOI10.1007/978-90-481-9431-5Springer Dordrecht Heidelberg London New YorkLibrary of Congress Control Number: 2010931597O Springer Science+Business Media B.V. 2010No part of this work may be reproduced, stored in a retrieval system, or transmitted in any form or byany means, electronic, mechanical, photocopying, microfilming, recording or otherwise, without writtenbeing entered and executed on a computer system, for exclusive use by the purchaser of the wor Ose ofpermission from the Publisher, with the exception of any material supplied specifically for the purpoCover design: eStudio Calamar SLPrinted on acid-free paperSpringerispartofSpringerScience+businessMedia(www.springer.com)PrefaceIn the last decade Flash cards became the most important digital storage supportIt is difficult to identify a single killer application(digital photography, MP3digital video, ...)or whether the success of this media support is due to itsusability in different applications. It is also difficult to state whether the recentlution in the infotainment area has been triggered by the availability of high-performance NAND Flash memories or if the extraordinary success of Flash cardsis a consequence of the establishment of new applicationsIn any case, independently of the cause-effect relationship linking new digitalapplications and Flash cards, to realize how NANd Flash memories entered in ourdaily life, it is sufficient to imagine as they would change our recent habits if theNAND memories disappeared suddenly. To take a picture it would be necessary tofind a film (as well as a traditional camera .), disks or even magnetic tapes wouldbe used to record a video or to listen a song, and a cellular phone would return tobe a simple mean of communication rather than a console for an extendedentertainmentThe development of nand Flash memories will not be set down on the mereevolution of these digital systems since a new killer application can trigger a furthersuccess for this memory support: the replacement of Hard Disk Drives(HDD)with Solid State Drives (SSD)The advantages of Ssd with respect to HDD are countless(higher read/writspeed, higher mechanical reliability, random access, silent operation, lower powerconsumption, lower weight, .. ) Nevertheless, the cost per gigabyte is stillsignificantly favorable to hDd and the success of ssd will depend only on theperformances that they will succeed in reachingThe present book, the fourth authored by rino micheloni and coworkers afterVLSI-Design of Non-volatiles Memories, Memories in Wireless Systems and ErrorCorrection Codes for Non-volatile Memories, all published by Springer, tacklesall the main aspects related to NANd Flash memories, from the physicaltechnological, and circuit issues to their use in Flash cards and SsdsAfter an extended market overview(Chap. 1), Chap 2 has been conceived as aguide for the entire book, so that the reader can directly reach the heart of theproblems that interest himThe following chapters deepen physical and technological aspects. In particularChaps. 3 and 4 tackle technological and reliability issues of traditional FloatingGate NAND memories, respectively, while the state-of-the-art of charge trappingtechnologies is effectively summarized in Chap 5Ⅴ i PrefaceThe central part of the book is dedicated to circuit issues: logic( Chap. 6),sensing circuits(Chaps. 8 and 9)and high voltage blocks( Chaps. 1l and 12)Other basic topics related to circuit aspects are also analyzed, such as theimplementation of Double Data Rate interfaces( Chap. 7), while multilevel storage(2 bits per cell) is presented in Chap. 10Techniques adopted to increase memory reliability and yield are discussedin Chaps. 13 and 14, the former dealing with redundancy, the latter with ErrorCorrection Codes. The test flux used by nand memories manufactures is describedin Chap 15Chapter 16 focus on nand devices storing 3 and 4 bits per cell that allowreaching the lower cost per gigabyte and that will conquer, in the next few years,the market of consumer applicationsThe last chapters are dedicated to the two most popular systems based onNAND memories: Flash cards( Chap. 17)and SsD(Chap. 18). The relationshipbetween Nand memories and system performances are highlightedFinally, Chap. 19 describes the effects of ionizing radiations on non-volatilememories, to understand whether NaNd memories can be safely used in spaceand military applicationsProf. Piero olivoDean of the Engineering FacultyUniversity of ferrara, ItalyAcknowledgementsAfter completing a project like a technical book, it is very hard to acknowledgeall the people who have contributed directly or indirectly with their work anddedicationFirst of all, we wish to thank all the authors of the contributed chaptersWe have to thank mark de Jongh for giving us the possibility of publishing thiswork and cindy zitter for her continuous supportLast but not least, we keep in mind all our present and past colleagues for theirsuggestions and fruitful discussionsRino. Luca and alessiaTable of contentsPrefaceAcknowledgementsvIII Market and applications for nand Flash memoriesGregory Wong2 NAND overview: from memory to systemsR. Micheloni, A Marelli and S. Commodaro3 Program and erase of Nand memory arrays55Cristoph Friederich4 Reliability issues of NAND Flash memoriesC. Zambelli. a. Chimenton and p. olivo5 Charge trap nand technologies115Alessandro grossi6 Control logic131A Marelli.R Micheloni andR. ravasio7 NAND DDR interface161Andrea silvagni8 Sensing circuits197L. Crippa and R. micheloni9 Parasitic effects and verify circuits235L. Crippa and R. michelonO MLC Storage261L Crippa and R Micheloni11 Charge pumps, voltage regulators and HV switchesR Micheloni and L Crippa

结合工程应用的广泛性和集中性，将全书分为控制、通信、电力电子、结构、热、图像和逻辑七大部分，每一部分通过4～6个实例讲述MATLAB在某一个特定领域的工程应用。

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除掉封面，共446页，只有5.39M,但内容是最全面的，质量上也是非常清晰的。是学dsp算法的绝佳书籍，没有华丽的数学推导，简单明了，名曰数字信号处理C语言程序集，民间又称DSP算法大全C语言版本。第六章FIR数字滤波器的设计F■尋■■b■晷↓國■看↓■↓b日↓bb↓●■■22786.1窗函数方法…22?§6.2域最小误差平方设计.……238§6.3切比雪夫逼近方法…………42第三篇随机数字信号处理第一章经典谱佔计……6§11功率谱估计的周期图方法…····““甲早争·道者自自.264§1.2功率谱估计的相关方法T■冒■■■■■『曾■■詈『國昏日■■哥■订d·聊聊b■山如↓h“◆白ψp4q第二章现代谱估计………………………26821求解一般托布利兹方程组的莱文森算法■■■昏■■1冒■■看嚼司聊國司冒D■180§22求解对称正定方程组的乔里斯基算法q■ψ鲁鲁曾◆◆曾自自4鲁唱音昏鲁自■Z83§23求解尤利沃克广程的菜文森德宾算法…°P甲自287§2.4计算ARMA模型的功率谱密度§2.5尤利沃克谱佔计算法………………………………………292A2.6协力差谱估计算法…1亡■曾■■目■鲁會曾罪司罪鲁·命讠咖D■■■■b啁§2.7 Burg谱佔计算法……1■●33§2.8最大似然谱估计算法第三章时频分析·聊·即·D●b·■唱鲁·◆■申曾阜曾q俨俨■■中個◆314§3.1维格纳( Wigner)分布·“314§32离散小波变换r""t31第四章随机信号的数字滤波也“命甲甲即甲330§41维纳( Wiener)数字滤波330§4,2卡尔曼( Kalman)数宇滤波.吾小如山山甲·自甲§43最小均方(LMS)自适应数字滤波"…"…"∵"卜"r""r"s""341§4-4归一化LMS自适应数字滤波…………344§4.5递推最小二乘(RLS)自适应数字濃泼导↓↓晶3L8第四篇数字图像处理第一章图像雄本运算■■↓罪隱b■【b啁山b西血a导即·晶s咱■聊暴,M352§1.1图像读取、存储与显示…第一篇常用数字信号的产生第一章数字信号的产生§1.1均匀分布的随机数功能产生(a,b)区间上均匀分布的随机数。方法简介均匀分布的概率密度函数为f(r)共它2,方差为Qb通常用U(a,b)表示。均匀分布的均值为+b产生均匀分布随机数的方法下首先,由给定的初值x,用混合同余法a=(ai-1+c)(mod M)产生(,1)区间上的随机数y其中:a-2045,c=1,M=22;然后,通过变换x,=a(ba)y;产生{a,b)区间上的随机数z;三、使用说明1.子函数语句double urniform (a, b, seed>2.形参说明a——双精度实型变量。给定区间的下限。b—双糖度实型变量。给定区间的上限。seed-—长整型指针变量。*seed为随机数的种子。四、子函数程序(文件名: uniform.c)Double uniform (a, b, seed)double a, bilong int的sced;QubIc￥seed=2045兴(#seed)+1ccd=.Scd一(;gced/lC48576)两L18576t=(兴seed)/1048576.0;t=+a)苦trefute〔五、例题产生50个0到1之问均匀分布的随机数主函数程序(文件名: uniform.r):# inelude" stdio.h′include furiomaini)doble a,b,x; int i+Jg intdouble unifo r(double, double, long int xa=0.0;h=1.0;=13?9for(i=0

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含有方波、锯齿波、正弦波、三角波的低频信号发生器，以及keil编写的C程序

完整的智能电梯c语言程序打包。8层双电梯。主要解决双电梯运行最优化的问题。