segymat地震matlab

信号的估计与检测理论 判决门限 判决概率 贝叶斯准则 平均代价

该项目使用Eclipse等软件，使用SQLserver数据库。要求用BS架构的javaWeb语言完成相关功能的实现。前台要求用jsp和javascript完成，后台的业务处理用servlet。该系统要能够完成小区日常事务的基本管理。包括用户等级，水电费的录入，房屋户型的的管理，小区物业人员及其他工作人员的管理（考勤记录，工资发放等）等

车载LFMCW雷达系统仿真代码，详细，已通过实际测试。

在工程应用中，若采用长短基线配对使用的多基线干涉仪系统，由于基线一般比较小，尤其在高频段辐射源测向时，首先天线架设和安装比较困难，其次天线阵元太近可能会带来天线互耦现象。若采用多长基线系统，主要问题集中在解模糊的问题上。所以构造了一种非对称三元直线阵，采用虚拟阵元的办法来构造虚拟短基线，达到解模糊，从而实现测向

描编程序实现磁盘调度算法，并求出每种算法的平均寻道长度。设计要求：（1）能够输入程序要访问的磁道序列或系统自动生成程序要访问的磁道序列和磁头当前所在的磁道数。（2）可以选择某磁盘调度算法（先来先服务算法、最短寻道时间优先算法、扫描算法和循环扫描算法）。（3）能够以图表形式显示磁盘调度顺序和平均寻道长度。

微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221

小波分析，《小波分析理论与Matlab R2007实现》源代码

电能表的软件系统包括程序数据结构模块、程序初始化与电表运行处理模块、事件分配查询管理处理模块及显示处理模块、通讯处理模块、电量处理模块、时间与时段管理处量模块、电表最大需量处理模块八大部分组成，各个部分都有其特殊的任务，在电表系统中完成它们相应的功能。●●●●程序数据结构部分●●●●●●●●●程序数据结构部分程序数据结构模块是对程序中的数据进行分析,合理的分配数据内存,定义程序涉及的变量。它是根据整个程序的算法来制定的,同时一个好的数据结构对整个程序的编写有非常重要的作用,因此根据电能表软件系列实现的功能及其算法制定合理的数据结构。电能表的数据结构包括两个部分:内存数据结构和数据结构与常量结构。●这个是与常量的数据结构,在显小与数据通讯都会使用这个结构●●●●●●●●●程序常量数据结构部分●●●●数据标示项数据标示表示的正反数据存放的格式数据值的长度数据在与的偏移量数据显示的符号通过此结构可以把所要显示、通讯的数据在或者在存放的位置长度以极标志等内睿取出供所需要的函数使用●●●●程序数据结构部分●●●●●●●●●合相有功功率合相有功瞬时功率电压有校值合电流有校值当前的线频率合功率因数合相电压与电流的夹角当前的电能此结构可以对的计量参数寄存器一次可以全读出,并同时也可以分别取出对应所需要的参数●●●●●●●●●程序初始化与电表运行处理●●●●程序初始化与电表运行处理●程序初始化与电表运行处理模块是对整个程序进行初始化,并对电表运行的六种状态进行转换。程序初始化包括两个部分:初始化和电表各部件初始化。初始化是对各部件进行初始化,为各部件在程序工作时提供合适的初始状态,它包括配置口工作模式、看门狗初始化、定时器初始化、键盘中断初始化、串口中断初始化、初始化等等。电表各部件初始化是对电能表系统各部件进行配置工作状态,初始化它们的工作方式,为程序工作提供电表部件初始状态,它包括指示灯初始化显示初始化、实时时钟初始化、电量恢复、通讯信道、历史电量处理等等部件的初始化。●●●●口工作模式●●●●●●●●●口工作模式如果有没有用到的口,作输入时要通过电阻与或者与连接,作输出时要输出置与置因为设备输入端未连接将会产生工作枚障,如果输入未连接,则由于噪音等原因可能会产生内部输入电平,从而导致故障。如果在上电时口为输入,但电池供电时口的电平为不确定状态时,也应对口作相应的处理●当主时钟切换到副时钟时,应将主时钟的口设为输出置看门狗初始化●●●●●●●●可选字节设定地址:080H/Ls0HrWINDOW1F工NDOWWDCSWDCS1WDCSLSROSC看门狗的开了NDCW1VINDOMO看门狗定封器窗口打开周期窗时间设定为1C5WDTCN看门狗定时器计数器的操作控制/非法汸问检测琹止计数器操怍复位后停止计数),禁止非法访问检测操作允许计数器橾作;愆位后始计敏),氘许非法访闻枱测橾作看门狗定时器HD,FDCS1HDCEO昋门狗定时器溢出吋间0z°/faL(3.88ms)时间间隔设置n/f!(7.76ms):25/土R(3L.03ms0CTL (62, OG sD0125fsL(124.12mE)fL(496.4LSROSC内部低速振蓠器操作看门狗设为不可由软件停1(出将1写入C寄存器的第0红 SESTOP)时停l操作不能停止(即使将1写入 SRSTOP位也不停止操作)能停止单片机内部的看门狗把设为不能停止时为硬看门狗,必须在窗口打开才能清狗否则单片机会复位,●●●●串口中断初始化●●●●●●●●●●由于多功能表有二个供通讯的口,一个供红外通讯口。但单片机只有二个哪么就需要模拟其中一个的分频时钟信号不能得到此时应选的分分频时钟信号模拟红外通讯,需要个外部中断(接收接收管上的电平信号并每要检测屮断口的信号),二个定时器(输出载波与的时间间隔)串口中断初始化有关UART0的寄存器波特率发生控制寄存器0( BRGCO)真出:F? iH Aher reset: 1Fh民WEymarBRGCOTPE01TP90O0 MDLO4MPLSMDLDe MDLoTBLOm(TPS01,TPS00)=(0,0)选择定时器TM50的输出作为TPSDTP500Base cock (IxeLKol selection"fPRs=2 MHz fFRE-5 MHz fFRs-B MHz1FFG-10MH基本时钟TM50 DutpfEgli1 H25 H4 HT5 MHz250kF2H25 kHz1 MH26H2625kH15625kH2250H3125k因为如果选择外围硬件时钟fprs作为基本时钟,那么就不可能产生出1200bps的波特率。MDLO4MDLOS MDLO2 MDLOT MDLOG k Selectian of 5-titcounterx Selng Erchbiled0acLM/B0(MDLO4, MDL03, MDLO2MDL01,ML00)=(0,1,1,0,1),k=13028 fruTa2a scLk/?31t/3

【实例简介】在sinmulink中仿真三相逆变器，利用的控制是SPWM

自1987年Kass提出Snakes模型以来，各种基于主动轮廓线的图像分割理解和识别方法如雨后春笋般蓬勃发展起来。Snakes模型的基本思想很简单，它以构成一定形状的一些控制点为模板（轮廓线），通过模板自身的弹性形变，与图像局部特征相匹配达到调和，即某种能量函数极小化，完成对图像的分割。再通过对模板的进一步分析而实现图像的理解和识别。