毕业设计_在线产品即时比价系统

【实例简介】超宽带通信是近年来的研究热点，本文档给出了一种UWB通信系统直接序列产生的一种方法，并用通信常用的MATLAB仿真软件给出了结果。

对BPSK信号进行扩频和解扩，并在不同信噪比条件下对其误码率进行MATLAB仿真，并与理论的误码率曲线进行对比。

linux下的简单文件服务器和客户端程序

2018电工杯A题的完整版论文，论文获得2018年电工杯的二等奖

IEC 61970是国际电工委员会制定的《能量管理系统应用程序接口（EMS-API）》系列国际标准。对应国内的电力行业标准DL890。 　　IEC 61970系列标准定义了能量管理系统（EMS）的应用程序接口（API），目的在于便于集成来自不同厂家的EMS内部的各种应用，便于将EMS与调度中心内部其它系统互联，以及便于实现不同调度中心EMS之间的模型交换。 　　IEC 61970主要由接口参考模型、公共信息模型（CIM）和组件接口规范（CIS）三部分组成。接口参考模型说明了系统集成的方式，公共信息模型定义了信息交换的语义，组件接口规范明确了信息交换的语法。 　　虽然IEC 61970称为“能量

《Automatic Panoramic Image Stitching using Invariant Features》 MATTHEW BROWN∗ AND DAVID G. LOWE给出的全景自动拼接软件，和论文相配套，特别好用！！！

李航蓝皮书《统计学习方法》配套PPT，由清华大学深圳研究院袁春老师制作，特意分享出来供大家学习

微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221

实验 1 ：模拟AM调制解调系统幅度调制解调技术是一种最简单的模拟调制方法，而且通过幅度调制容易理解调制的概念。本实验通过 LabVIEW 编程产生信号频率、幅度等参数可变的基带信号和载波信号，实现 AM 调制和解调，观察参数变化对已调信号的影响。并通过仿真运行整个 AM 调制解调系统，学习掌握代码调试方法，验证程序的正确性。实验 2 ：模拟FM调制解调系统利用 LABVIEW 仿真，产生基带信号频率、载波频率及频偏等参数可变的 FM 调制解调系统，观察参数变化对被调制信号以及其 FFT 功率谱的影响。并通过仿真运行整个 FM 调制解调系统，学习掌握代码调试方法，验证程序代码的正确性。通信原狸与系统实验报告【程序设计】1、总体程序实验1:模拟AM调制解调系统AM信亏波形翌(时)波信号上边带下边带正弦波形(时域)载波幅值制信号湖形图(时域)调制值颗谱测量AM洞制信号波形因(罚信号「·(峰值100000实验2:模拟FM调制解调系统载波率f(Hz)仿真信号3网回區最大偏移量f(Hz仿真信号2信号基带率和b(HzPower SpectruA圆周信号域仿真信号FM调制信号弦10000001000000导数dxdt)Simulate正弦通信原理与系统实验报告2、部分函数图音分函数图Hilbert变换函数部至复数转换复数至极坐标转换交流和直流分量估计归一化波形【实验内容】实验1:模拟AM调制解调系统1、按(P2713)的实验步骤1完成AM调制2、按(P2)的AM解调原理的提示完成AM解调根据实验教程,仿真信号快速ⅥI与频谱测量快速Ⅵ发其最终对话框选项设置如下:信号关型O幅(均方慢)加后的辅轴入信号5.583643幅度(峰直盐r变谱功增密赏占空比5.5050450D2040.60B口加难声声型099999阳果览种子值验时识相对于更开时间吧对(日期与时于均数日100000仍真平集时轴更信号采枉盈重置相位,种子和时标识乐月连续生成生递每次环口整数需吗数信号名称实玩无样数10o信号名称取商在前面板中设置参数如卜:载波幅值调制幅值11.:1戴冷200m1……4006008001000020406080100120140160180200调制频率0250500750100012501500175020000204060801001201401601802004通信原理与系统实验报告设置好参数后,运行程序,结果如图所示载波信号波形(时域)弦M4M制信号波形(时域正弦20020015050-15020020000.020.040.060.080.100.020.040.060.080.1时间时间AM调制信号形图(数城)开F:(值)四4M解号形(时城)5002050150200-15010020030040050000.020.040.060.080.1频率时间分析:观察“AM调制信号波形图(时域)”图可知:经过AM调制将调制信号加载到载波信号上后,形成的包络恰好与基带信号一致。观察“ΔM调制信号波形图(频域)”图可知:最左边的频谱为基带信号的频谱,而右边的三个频谱从左到右依次为下边带fc-fb,载波fe,上边带fc+fb的频谱。观察“AM解调信号波形图(时域)”图可知:解调后的信号与基带信号基本重合,说明运用包络检波法解调信号成功。改变实验参数增大基带信号的幅度,其他参数不变分析:如下图所示,前两幅图分別为增大基带信号幅度前的调制信号的时域图和频域图,后面两幅图为增大基带信号幅度后的调制信号的吋域图和频域图。通过观察图像可发现:增大基带信号樞度,其他参数不变的情况下:调制信号在时域上的幅度随基带信号幅度的增大而増大,而频域上不发生变化。5通信原狸与系统实验报告AM调制信号波形图(时域)AM调制信号波形(频域)应(F·(值)3005020050100200150300200-00.020.040.060.080.1100200300400500时间AM调周制信号波形图(时城)AM调制信号波形图(频域)正弦(FT·(峰值)50200100-1001002003000.020.040.060.080.10100200300400500时间频率增大基带信号的频率,其他参数不变分析:如下图所示,前两幅图分别为增大基带信号频率前旳调訇信号的时域图和频域图,后面两幅图为增大基带信号频率后的调制信号的时域图和频域图。通过观察图像可发现:增大基带信号频率,其他参数不变的情况下:调制信号在时域上的频率随基带信号频率的增大而增大,而频域上也发生了右移。AM调制信号波形图(时域MAM调制信号波形图(城)F·(峰值))M5020010050100200150-30020000.020.040.060.080.10100200300400500时间频率通信原理与系统实验报告AM调制信号波形图(时域)AM调制信号波形图(颈域)正弦·(峰值)50-200100500100-10020030020000.020.040.060.080.10100200300400500时间增大载波信号的幅度,其他参数不变分析:如下图所示,前两幅图分别为增大载波幅度前的调制信号的时域图和频域图,后面两幅图为增大载波幅度后的调制信号的时域图和频域图。通过观察图像可发现:增大载波幅度,其他参数不变的情况下:调制信号在时域上的幅度随载波信号幅度的增大而增大,而频域上不发生变化。AM调制信号波形图(时域)正弦AM调制信号波形圈(频域)H·(峰值)30050200010-500-100-200-150300-20000.020.040.060.080.10100200300400500时间频率AM调制信号波形图(时域)正弦AM制号形(炫)芷奸:()人503000200100细10020015030040020000.020.040.060.080.110200时间频率通信原狸与系统实验报告增大载波信号的频率,其他参数不变分析:如下图所示,前两幅图分别为增大载波频率前的调制信号的时域图和频域图,后面两幅图为增大载波频率后的调制信号的时域图和频域图。通过观察图像可发现:增大载波频率,其他参数不变的情况下:调制信号频率在时域上的频率随载波信号频率的增大而增大,而频域上也发生了右移。AM调制信号波形图(时城正弦AM调制信号波形图(颁域)正弦任FT·(峰值)3002000100200-300-20000.020.040.060.080.10100200300400500时间频率AM调制信号波形图(时域)正凶M制儒号形图(域):(峰)300502001000-100-20030020000.020.040.060.080.10100200300400500时间实验2:模拟FM调制解调系统、按(322.3)实验内容完成FM的调制2、按(3223)的实验内容元成FM的解调根据实验教程,仿真信号快速Ⅵ与频谱测量快速ⅥI及其最终对话框选项设置如下通信原理与系统实验报告配雪仿真信号[真台号3]生造量结果预范所选到早3、02691幅度(蜂值位(D功幸造C线性O功率造移量占空比O092Hanning君果候嚣均方根对测经开始间保待O姆对(日期与时词)半均数目C仿真菜对钟申仨号·以可达到最速度运行里相位种了和时标日相位軍预100日)来用端牛应信号名称O当平均时用信号类型名偏学会称□开相位150200250300350400450500阳确定联群取篇□帮数在前面板中设置参数如下:基带频率fb(Hz)载波频率fe(Hz)20000400006000080000100000110000033000005000007000009000001E+6最大偏移量t(Hz)20000400006000080000100000120000140000160000180000205410设置好参数后,运行程序,结果如图所示基带信号(时域正弦A载反信号(时域)正弦0.5000.5-0.505E-50.00010000150.00025E-50.00010.000150.0002时间时间时城须域FM调制信号(时域正弦0.50.52E-6E-58E-50.00010.000120.000140.000160.000180.0002时司通信原理与系统实验报告时域频域FM调制信号(域)正弦(功率-1002000500000150000025000003500000450000055000006500000750000085000001E+7频率FM解调信号(时域)正弦2E-56E-58E-50.00010.000120000140.000160.000180.0002时间分析:观察“FM调制信号(时域)”图与“FM调制信号(频域)”图可知:经过FM调制后产生的波形与原理相符合;观察“AM解调信号波形图(时域)”图可知:解调后的信号与基带信号基本重合,说明运用非相关包络检波法解调信号成功。改变实验参数≯增大基带信号的频率,其他参数不变分析:如下图所示,前两幅图分别为增大基带信号频率前的调制信号的时域图和频域图,后面两幅图为增大基带信号频率后的调制信号的时域图和频域图。通过观察图像可发现:增大基带信号频率,其他参数不变的情况下:调制信号在时域上的频率随基带信号的频率的增大而增大。

【实例简介】Oracle官网下载的JDK，1.8最终版（Java SE Development Kit 8u231）。 MD5验证地址：www.oracle.com/webfolder/s/digest/8u231checksum.html