利用Matlab仿真平台设计单闭环直流调速系统。

微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221

这个压缩包里包含了Floyd算法，dijkstra算法，贪婪算法，遗传算法，搜索算法，蚁群算法，哈密顿环路等智能算法的MATLAB源代码，有助于研究智能算法的程序员使用。

这是基于OpenCV中一个例程进行相机标定，代码内部有我测试用的文件和图片，也可以看我的博客里的分析，必须好用。

针对轨迹序列 长度 不固 定 的特 点,计 算轨 迹 间的 距离。采用K均值算法对轨迹样本进行聚类。

基于matlab平台1、能对图像文件（bmp、 jpg、 tiff、 gif等）进行打开、保存、另存、打印、退出等功能操作；2、数字图像的统计信息功能：包括直方图的统计及绘制、区域图的面积、周长的统计、线条图中的距离测量等；3、数字图像的增强处理功能：（1）空域中的点运算、直方图的均衡化、各种空间域平滑算法（如局部平滑滤波法、中值滤波等）、锐化算法（如梯度锐化法、高通滤波等）（2）频域的各种增强方法：频域平滑、频域锐化、低通滤波、同态滤波等。（3）色彩增强：伪彩色增强、真彩色增强等4、图像分割：（1）点、线（hough变换检测直线）、及边缘检测（梯度算子、拉普拉斯算子等）；（

【实例简介】最近用到人脸识别技术，有个需求是多人脸图片的时候需要一个一个把人脸裁剪出来，以便获取人脸的图片，从而用其获取单人脸的特征

车载智能计算平台白皮书（自动驾驶）版权声明本白皮书版权属于中国软件评测中心,并受法律保护。转载、摘编或利用其它方式使用本白皮书文字或者观点的,应注明“来源:中国软件评测中心”。违反上述声明者,本单位将追究其相关法律责任目录、编制概要(一)编制背景二)编制目标三)编制方法四)特别声明车载智能计算平台内涵与范畴(一)自动驾驶技术目前存在三种发展路线二)汽车智能计算平台包括“车、云、网、库”三)车载智能计算平台是。级及以上自动驾驶的必要解决方案(四)车载智能计算平合的功能定位、车载智能计算平台关键技术发展现状(一)芯片由通用走向专用,类脑芯片提供全新架构二)车载智能计算平台操作系统功能需求不断细化成为主流软件架构三)车载以太网受到广泛关注和进入竞争关键期(四)实现实时动态高精度定位需多技术融合(五)安全需求不断拓展,预期功能安全备受关注(六)测试需求不断细化,车载智能计算平台测试标准尚未形成四、车载智能计算平台相关产业发展现状(一)国内外企业纷纷布局车载智能计算平台(二)互联网企业、整车厂与半导体企业积极布局芯片领域三)车控操作系统国外占据发展先机,开源操作系统或成最大赢家四)国内外汽车网络通信技术产业蓬勃发展(五)“集中众包”成为高精度地图制图新模式五、车载智能计算平台发展现状国内外对比)车载智能计算平台性能方面国外处于领先地位二)国外部分计算平台已实现量产、国内计算平台仍处于样机阶段三)忐片性能方面国内典型产品存在优势六、车载智能计算平台中长期发展趋势(一)自主式和网联式协同推进自动驾驶发展二)电子信息、通信技术与汽车多产业交叉愈加突显三)软硬件协同开发提高车载智能计算平合的综合效率(四)高度集成是未来车载智能计算平台的发展方向五)多种数据处理模式并存的现状仍将持续七、推动车载智能计算平台发展的措施建议(一)明确发展方向前瞻规划布局(二)建立专项基金培育创新能力(三)夯实产业基础完善产业结构四)对外开放交流加强国际合作附件:缩略语、编制概要(一)编制背景汽车工业是中国产业发展的重要驱动。中国汽车工业经过近年的发展,年汽车工业总产值占全国工业总产值的比重达到%,占全国的比重达%。中国汽车市场目前已是全球最大单体汽车市场,年产销量分别占世界汽车产销量的%和%,但千人汽车保有量仅为世界平均值的%,发展空间较大。随着汽车智能化、网联化、电动化和共享化的发展,汽车产业发展面临新一轮的变革机遇,我国应该加大投入,抓住机遇,加快推进汽车强国建设。智能网联汽车从交通运输工具日益转变为新型移动智能终端。汽车功能和属性的改变导致其电子电气架构随之改变,进而需要更强的计算、数据存储和通信能力作为基础,车载智能计算平台是满足上述要求的重要解决方案。作为汽车的“大脑”,车载智能计算平台是新型汽车电子电气架构的核心,也是新犁智能汽车电子产业竞争的主战场明确车载智能计算平合的定义和范畴、关键技术、产业现状以及发展路线,在此基础之上为车载智能计算平台关键技术进步和产业化应用推广提供措施建议,对推动我国智能网联汽车产业持续健康快速发展具有重要意义。《中国公路学报》编辑部口国汽车工稈学术研究综述中国公路学报(二)编制目标通过明确车载智能计算平台的内涵与范畴,界定汽车智能计算平台基本架构和车载智能计算平台功能定位。研究车载智能计算平台的技术框架,梳理车载智能计算平台的关键技术。探索车载智能计算平合相关产业组成,分析车载智能计算平合的产业链结构,研判产业发展趋势。旨在提出促进车载智能计算平台相关技术及产业发展的可行性措施建议,为行业主管部门提供决策参考,为行业健康有序发展提供指导依据(三)编制方法是研究学习国内外相关政策文献,充分借鉴参考国内外主要研究动态和成果。是调研国内外知名车载智能计算平台相关企业,汇集整理和分析来自实践应用的相关素材。三是邀请行业专家咨询评审。(四)特别声明研究范围聚焦技术和产业发展车载智能计算平台将涉及法律、道德、伦理、文化等诸多领域。本白皮书的编制主要是为了给相关行业主管部门和企业提供决策参考依据,集中在技术和产业两大层面展开研究,暂未涉及其他方面。研究内容仍有待进一步丰富完善本白皮书的主要观点和内容仅代表编制组目前对车载智能计算平台的研判和思考,欢迎各方专家学者和企业代表提出宝贵意见,共同推动白皮书的及时更新和纠偏。本白皮书为《车载智能计算平合白皮书(年)》,后续中国软件评测中心将会继续推出《汽车智能计算平台白皮书(系列)。二、车载智能计算平台内涵与范畴(一)自动驾驶技术目前存在三种发展路线年(国际汽车工程师协会)发布《标准道路机动车驾驶自动化系统分类和定义》,并于年月对标准进行了修订更新。标准将自动驾驶分为共个级别。人工驾驶(),即完全由驾驶员执行全部动态驾驶任务(),包括有主动安全系统介入的情况。辅助驾驶(),即由自动驾驶系统在连续的特定设计运行工况(下执行动态驾驶任务的横向或纵向车辆运动控制子任务(但不能同时),并由驾驶员负责完成动态驾驶任务的其余内容。部分自动驾驶(),即由自动驾驶系统在连续的特定设计运行工况下执行动态驾驶任务的横向和纵向车辆运动控制子任务,并由驾驶员负责完成驾驶环境监控,并对道路目标和状态做岀有效回应。条件自动驾驶(),即由自动驾驶系统在连续的特定设计运行工况下执行所有动态驾驶任务。但是要求驾驶员具备汽车功能保障意识,并随时可以对自动驾驶系统发布的干预请求,以及与动态驾驶任务相关的其他车辆系统的故障做出有效回应。高度自动驾驶(),即自动驾驶系统在连续的特定设计运行工况下执行全部动态驾驶任务和功能保障,不要求任何用户对干预请求做出回应。完全自动驾驶(),即由自动驾驶系统在任意连续的运行环境下,执行全部动态驾驶任务和功能保障,不要求任何用户对自动驾驶系统的干颈请求做出回应。

核心考点

Qt作上位机，接收发送数据，stm32与Qt进行串口通信

包含有一些对图像评价的方法指标： 均值、标准差、信息熵、色彩分量相关性、色彩分量百分比、水下彩色图像质量评价(UCIQE)