205-GHz-AlInN-HEMT-EDL_05545347-(2)
于 2014-12-06 发布
文件大小:260KB
0 215
下载积分: 1
下载次数: 13
代码说明：
205-GHz (Al,In)N/GaN HEMTs.more than 15 years of development, AlGaN/GaN high-electron-mobility transistors (HEMTs) have become the most technologically mature form of GaNbased HEMTs. There is, however, growing evidence that the total strain (i.e., the lattice-mismatch and piezoelectric contributions) limits the reliability of conventional AlGaN/GaN HEMTs
下载说明：请别用迅雷下载，失败请重下，重下不扣分！
发表评论
