205-GHz-AlInN-HEMT-EDL_05545347-(2)
于 2014-12-06 发布
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205-GHz (Al,In)N/GaN HEMTs.more than 15 years of development, AlGaN/GaN high-electron-mobility transistors (HEMTs) have become the most technologically mature form of GaNbased HEMTs. There is, however, growing evidence that the total strain (i.e., the lattice-mismatch and piezoelectric contributions) limits the reliability of conventional AlGaN/GaN HEMTs
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