IPMSM_sensorless

可用于计算齿轮（包括变位齿轮）在不同传递转矩下的时变啮合刚度(It can be used to calculate the time-varying meshing stiffness of gears (including modified gears) at different transmission torque)

H-infinity Control Example, robust control

matlab神经网络代码，由大名鼎鼎的西蒙.哈克编写(Matlab neural network code from the infamous Simon. Hack prepared)

不适用任何库函数，自己用matlab编写的直方图均衡化，可以看到结果图片(realize the Histogram Equalization without extant function)

microprocessor basic theory

说明：  利用非线性动力学的知识研究混沌行为，可以通过画运动的分岔图来研究参数变化对运动的影响，本程序以洛伦兹力为例子实现了分岔图的绘制(Knowledge of the nonlinear dynamics of chaotic behavior, can 通过 Painting Movement of the bifurcation diagram to study the impact of parameters on the movement, this program in order to achieve the Lorentz force as an example of bifurcation diagram drawing)

说明：  这又是一个完整的遗传算法子程序2,里面包含了各个子程序,运行没问题.(This is a complete genetic algorithm subroutine 2, which includes various routines, run no problem.)

基于MATLAB利用Particle-in-cell模型,对梯形管内壁等离子体离子注入过程,进行了二维数值模拟.计算结果表明在中心电极附近出现了“阳极鞘层”,该鞘层内部不存在离子,而且在鞘层边缘离子密度最高.在上下管壁上的离子注入剂量呈现“m”形分布.通过对注入过程中等离子体密度分布和不同时间段管壁不同位置离子注入剂量的跟踪,发现“阳极鞘层”扩展行为是导致“m”形分布的原因.由于梯形管形状的不对称性,“阳极鞘层”的边缘向梯形长底方向扩展较快.在注入初始时刻离子注入的能量很低,随着时间延长离子能量逐渐升高,这是由离子初始位置决定的.可见梯形管自身形状决定了鞘层形状和最终的离子注入能量和剂量分布.(Based on MATLAB use Particle-in-cell model, the trapezoidal pipe wall plasma ion implantation process, the numerical simulation of two-dimensional calculation results show that in the vicinity of the center electrode to a "anode sheath," which does not exist inside the plasma sheath, and the highest in the sheath edge ion density ion implantation dose showing the upper and lower walls of the "m"-shaped distribution through the process of injecting the plasma density distribution and the wall at different locations in different time periods ion implantation dose tracking, found that "anode sheath "extension behavior is leading to" m "-shaped distribution of the reasons due to the asymmetry of the trapezoidal shape of the tube," Edge anode sheath "extension to the end of a long trapezoid direction quickly in the initial moment of implantation energy ion implantation is low ion energy with time gradually increased, which is determined by the initial position of the ion. visible trapezoida)

对图像进行膨胀与腐蚀变化，并与MATLAB自带的函数相比较。(Expansion and erosion of the image changes, and with the MATLAB built-in function compared.)

Evaluation of Objective Quality Measures for Speech Enhancement