20140114043337585

Gauss-Seidel method for system of equatios, type: Ax=b

Program to do main program 2 with picture Lena

2011年中国大学生数学建模竞赛（高教杯）A题金属浓度中的克里金matlab算法，含数据。(2011 China Mathematical Contest in Modeling (Higher Education cup) A Question metal concentration kriging algorithm, containing the data.)

create B-spline in 2D and 3D space Matlab

Physical Principles of Sedimentary Basin Analysis源代码和书(Physical Principles of Sedimentary Basin Analysis)

五子棋代码，智能实现人机对战。欢迎下载观看(The Gobang code, intelligent man-machine battle)

引用 MATLAB 主要函数指令表,引用 MATLAB 主要函数指令表(MATLAB,MATLABMATLABMATLAB)

zigzag，此程式是运用在影像上面的工具，简单的作业程式。(zigzag, this program is a tool used in the image above, a simple job application.)

matlab 中具体OFDM过程，包含各种QAM调制方式，以及信道，编码，还有大量仿真图(OFDM matlab specific process, including various QAM modulation and channel coding, as well as a large number of simulation map)

基于MATLAB利用Particle-in-cell模型,对梯形管内壁等离子体离子注入过程,进行了二维数值模拟.计算结果表明在中心电极附近出现了“阳极鞘层”,该鞘层内部不存在离子,而且在鞘层边缘离子密度最高.在上下管壁上的离子注入剂量呈现“m”形分布.通过对注入过程中等离子体密度分布和不同时间段管壁不同位置离子注入剂量的跟踪,发现“阳极鞘层”扩展行为是导致“m”形分布的原因.由于梯形管形状的不对称性,“阳极鞘层”的边缘向梯形长底方向扩展较快.在注入初始时刻离子注入的能量很低,随着时间延长离子能量逐渐升高,这是由离子初始位置决定的.可见梯形管自身形状决定了鞘层形状和最终的离子注入能量和剂量分布.(Based on MATLAB use Particle-in-cell model, the trapezoidal pipe wall plasma ion implantation process, the numerical simulation of two-dimensional calculation results show that in the vicinity of the center electrode to a "anode sheath," which does not exist inside the plasma sheath, and the highest in the sheath edge ion density ion implantation dose showing the upper and lower walls of the "m"-shaped distribution through the process of injecting the plasma density distribution and the wall at different locations in different time periods ion implantation dose tracking, found that "anode sheath "extension behavior is leading to" m "-shaped distribution of the reasons due to the asymmetry of the trapezoidal shape of the tube," Edge anode sheath "extension to the end of a long trapezoid direction quickly in the initial moment of implantation energy ion implantation is low ion energy with time gradually increased, which is determined by the initial position of the ion. visible trapezoida)