watermaking

This m file performs the QPSK transmission and reception.

flow simulation with 2D mesh

GPS时间基准转换，利用matlab来实现的一个小程序(GPS time reference conversion, using matlab to achieve a small program)

滑膜变结构控制与matlab仿真，先进的控制方法的仿真应用(Synovial variable structure control and matlab simulation)

某统计局欲了解第三产业总产出、中间消耗、增加值、劳动者报酬、生产税净额、固定资产折旧、营业盈余之间的关系，根据下面给出的数据建立相应的模型并进行分析，同时又因为变量数目过多影响对其的综合分析，要求对他们进行主成分分析；(Bureau of Statistics For a third of total industrial output, intermediate consumption, value added, workers compensation, production, net of tax, depreciation of fixed assets, the relationship between the operating surplus, in accordance with the following data given by the model and the corresponding analysis, at the same time, because too many variables affect the number of comprehensive analysis of its request for them to carry out principal component analysis )

用logistics法拟合数据，并达到预测的作用，数据文件未上传(Fitting with logistics data and forecasts to achieve the role of the data file did not upload)

说明：  matlab期望信号到达方向是0度，干扰方向20度，通过RLS算法画出波束成形的方向图(matlab desired signal arrival direction is 0 degrees, 20 degrees the direction of interference by the RLS algorithm to draw beamforming direction map)

2010年WCCI会议发表的二型模糊系统EIA降型方法(Presented in 2010 World Congress on Computational Intelligence, as the latest type reduction algorithm of type-2 fuzzy logic systems. EIA)

语音信号采集的matlab仿真（需自己采集音频信号）(Matlab simulation of audio signal acquisition)

说明：  若锗中含有一定数量的杂质元素Sb，试根据要求分析杂质浓度与电离度以及电离温度之间的关系： （1）当Sb浓度分别为 和 时，计算杂质99％，90％和50％电离时的温度各为多少？ （2）根据一定杂质类型和杂质浓度，画出电离度和温度的关系图线，并确定半导体处于强电离区（电离度>90％）的温度范围。 设计要求：（1）具有友好输入输出界面； （2）调整输入数据，得出相应结果，并进行分析。 (If the germanium containing a certain number of impurity elements Sb, test analysis in accordance with the requirements of impurity concentration and ionization degree, as well as the relationship between the ionization temperature: (1) When the Sb concentration and time were calculated 99 percent of impurities, 90 and 50 ionization When the temperature of each number? (2) according to certain types of impurities and impurity concentration, ionization degree and temperature to draw the relationship between the graph lines, and to determine the semiconductor in a strong ionization zone (ionization degree)