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说明：  若锗中含有一定数量的杂质元素Sb，试根据要求分析杂质浓度与电离度以及电离温度之间的关系： （1）当Sb浓度分别为 和 时，计算杂质99％，90％和50％电离时的温度各为多少？ （2）根据一定杂质类型和杂质浓度，画出电离度和温度的关系图线，并确定半导体处于强电离区（电离度>90％）的温度范围。 设计要求：（1）具有友好输入输出界面； （2）调整输入数据，得出相应结果，并进行分析。 (If the germanium containing a certain number of impurity elements Sb, test analysis in accordance with the requirements of impurity concentration and ionization degree, as well as the relationship between the ionization temperature: (1) When the Sb concentration and time were calculated 99 percent of impurities, 90 and 50 ionization When the temperature of each number? (2) according to certain types of impurities and impurity concentration, ionization degree and temperature to draw the relationship between the graph lines, and to determine the semiconductor in a strong ionization zone (ionization degree)