qamTx

编写针对一个搜索点宏块比较的下面两个匹配函数：均方误差(MSE)、绝对值误差(MAD)。函数名直接使用简写。要求当前帧和参考帧的数据均采用二维数组表示。(Writing for a search point macroblock compare the following two matching functions: the mean square error (MSE), absolute error (MAD). The function name directly using shorthand. Requirements of the current frame and reference frame data are used two-dimensional array.)

有关matlab的一些文章,希望对大家有帮助(Some of the matlab article, we want to help)

说明：  数字信号处理及其Matlab实现.pdf(Digital signal processing using matlab)

伪随机码的模糊函数及其相关特性，用matlab仿真实现(Ambiguity function of pseudo-random code and its related properties, Simulation using matlab)

this is a code for wavelet decomposition

实现了图象匹配的功能，是很不错的编程范例，希望大家会喜欢。(the images matching functions, is a very good example of the programming, I hope you will like.)

newton raphson load flow program

最大功率追踪技术仿真模型，用于学习光伏发电的matlab/simulink模型搭建(Maximum power tracking technology simulation model)

基于MATLAB利用Particle-in-cell模型,对梯形管内壁等离子体离子注入过程,进行了二维数值模拟.计算结果表明在中心电极附近出现了“阳极鞘层”,该鞘层内部不存在离子,而且在鞘层边缘离子密度最高.在上下管壁上的离子注入剂量呈现“m”形分布.通过对注入过程中等离子体密度分布和不同时间段管壁不同位置离子注入剂量的跟踪,发现“阳极鞘层”扩展行为是导致“m”形分布的原因.由于梯形管形状的不对称性,“阳极鞘层”的边缘向梯形长底方向扩展较快.在注入初始时刻离子注入的能量很低,随着时间延长离子能量逐渐升高,这是由离子初始位置决定的.可见梯形管自身形状决定了鞘层形状和最终的离子注入能量和剂量分布.(Based on MATLAB use Particle-in-cell model, the trapezoidal pipe wall plasma ion implantation process, the numerical simulation of two-dimensional calculation results show that in the vicinity of the center electrode to a "anode sheath," which does not exist inside the plasma sheath, and the highest in the sheath edge ion density ion implantation dose showing the upper and lower walls of the "m"-shaped distribution through the process of injecting the plasma density distribution and the wall at different locations in different time periods ion implantation dose tracking, found that "anode sheath "extension behavior is leading to" m "-shaped distribution of the reasons due to the asymmetry of the trapezoidal shape of the tube," Edge anode sheath "extension to the end of a long trapezoid direction quickly in the initial moment of implantation energy ion implantation is low ion energy with time gradually increased, which is determined by the initial position of the ion. visible trapezoida)

model of a three phase rectifier taking into account the current