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Flash-ROM（闪存）已经成为了目前最成功、流行的一种固态内存，与 EEPROM 相比具有读写速度快，而与 SRAM 相比具有非易失、以及价廉等优势。而基于 NOR 和 NAND 结构的闪存是现在市场上两种主要的非易失闪存技术。 Intel 于 1988 年首先开发出 NOR flash 技术，彻底改变了原先由 EPROM 和 EEPROM 一统天下的局面。紧接着，1989 年东芝公司发表了 NAND flash 技术（后将该技术无偿转让给韩国　Samsung　公司），强调降低每比特的成本，更高的性能，并且象磁盘一样可以通过接口轻松升级。-Flash-ROM (flash memory) has become the most successful and popular form of solid-state memory, Compared with the EEPROM with faster read and write, compared with SRAM and nonvolatile, and the advantages of cheap. For the NOR, and NAND flash memory structure of the market is now two main nonvolatile flash memory technology. Intel in 1988 to develop the first NOR flash technology, completely changed from the original EPROM and EEPROM dominate the market situation. Then, 1989 Toshiba Corporation issued a NAND flash technology (free after the technology transfer to the South Korean Sam sung), stressing the lower cost per bit, higher performance, and the same as the disk interface can be easily upgraded.

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