初等概率论附随机过程_钟开莱_中文
初等概率论附随机过程_钟开莱_中文内容提本书系根拐施普林格出版社( Springer-Verlag出版的钟开莱著初等慨率论附随机过程》( Elementary Probabilily Theory with Stoch-astic Processes)1975年第二版译出,鳳书是大学教学教科书,可作为我囯高等学校有关挚业的教学参孝书D2.底等擎校教杂考书初等概率论附隋机过程钟开粟著魏宗舒吕乃刚王万中汪振林举于人兵出新华书店北意发行所发行潜江县印刷厂印装开本?87X10921/32的张12.25字数293,01979年8月第1版1980筇莒月湖北第1次印刷印数1—12,400书号13012·0382定价0.89元第一版序言在过去半个世纪中,概率论从一个较小的孤立的课题发展成为一个与数学许多其它分支相互影响内容宽广而深入的学科,同时,它对各种应用科学,诸如统计学、运筹学、生物学、经济学和心理学的数学化赶着中心作用—这里仅举几个在它们的名种前早已牢固地安上“数理这个前缀词的科学.就率成年的标志反映在该学科教科书内容的改变上,在过去的日子里,这类书的大多数明显分成两种不同的类型,一种是组合的随机游戏,另一种是以正态分布为中心的“误差论”在费勒的经典著作〔见[ Feller11④)于1950年问世后,这一时期就告终止,我第一次讲授的有点份量的穊率论教程就是取材于这部书的原稿.随着时间的推移,概率论及其应用在大学课程中赢得了一个位置,成为许多领域中必修的一门数学学科,现在:这一理论的要点在不同的水上讲授,有时甚至在微积分之前讲授.这本教科书是作为大学二年级水平的门课程而写的,它并不要求对这一学科有任何事先了解,并且头上三章射大部分无需微积分的帮助就可以阅读.接下来的三章则要求懂得如何使用无穷级数及其有关课题的识而对于涉及具有密度的随机变量的讨论,当然要求有某些微积分知识.那些讲解“连续情况”的部分,是很容易与“离散情况”的部分分开的并且可以留到以后去读.头上六章的内容应该成为任何有意义的概率论初级导论的主要部分,在这以后,一个合理的选择包括:7.1普哇松分布,它可插在本课程较前的部分},对3,74,7.6(正方括号内的名字清查阅书术的一般参考文献威席·费勸 Willam Fell〔1906~1970)a11((/868态分布和大数定律)作某种不太深入的阅读,和§8.1(简单随机动,这既有启发性又很有用),所有这些,在二分制学校(→学年分灯两个学期)可以一学期内完成,但对四分制学校(一学年分为四个学期〕要一学期完成的话,就必须作一些削减.明确地说,对这样个短课,第一和第三章可以粗读一下并把打星号的材料路去.无论哪种情况;例如在一个二分之一学年的课程或两个四分之一学年的课程中,只要时间允许,就务必对第七章的正态近似定理作扎实的讲解.最后的第八章,给出马尔可夫链一个完整而初等的描述并且是课程主要郣分在较成熟的水平上的一个推广正态近似定理,连同打星号的§5.3,5.4(序贯抽样和卜耶坛子模型),以及§7.2(普哇松过程),或者再包括附录中的某些补充,这些材料提供了由浅入深、稳步地进人随机过程领城的途径,把这些课题包括在内,本书适合于一→门两个四分之一学年的课程,这也就是我多次对数学科学和学工程的學生讲授的内容,但是,经过头上六章的训练后,读者可以进入如上面提到的费勒专著中一些更深的专题,如果读者具有足够的数学基础,他也有资格选读门严谨的课程,其内容有如我那本较深书 Chung1]中所提供的为了适合课堂之用,如何选择、组织和讲解材料,我确是动了些脑筋,但我却没有试图提供一个装璜精美、适合精确的时间表或程序表的内容,就象大众对快速服务框台要求提供的商品那样因为教师对他的班级恰好需要什么,能作出最好的决定,所以应留給他一定程度的伸缩性和选择性,为了说明主旨和解释清楚,每章开头总包含一些容易阅读的部分,因此教师可以集中注意课文中较严格的方面。每章还包含一些略具挑戕性的课题(例如§.425)以供选择,它们并不是为了刁难初学者,而是想引导他们作进一步的研究,本书始终着重于初等概率论中基本概念和方法透◆2彻和细致的讨论,而修饰或复杂的技巧极少,由于预见到初学者的困难,特地选择许多例题以引起更好的思考这常常是用提和回答一些诱导性的问题来实现的.加入一些历史的、哲学的和个人的注释,可以给这一生动学科增添一总趣味,我希望读者不但从这本书中学到一些东西,还在阅读过程中享受到一定的乐趣头上六章有二百多个习题,最后两章有八十多个习题.许多是容易的,较难的都打上星号,书末附有全部答案.带星号的背和段处理较专门或较细致的内容,可以跳过它们但浏览一下还是值得的任何初等教科书的作者总得感谢无数前人.我个人特别应该致谢的如下: Michel nadzela写出了我1970年在斯坦福大学的饼课笔记, Gian-Carlo Rota见了这份笔记后,推动我把它改写为一本书.DG. Kendall对某几初稿提了意见并进一步给予道义上的支持,JL,Dob自愿阅读大部分手稿并提供许多有益的建议.K.B. Erickson在他所教的课程中用了一部分材料,AA. Halkema审阅了最后一稿并作了许多改进, Dan Rudolph和我一赶看了校样, Perfecto Mary画了讨人喜欢的所有插图Gail Lemmoud用她一贯的高效率和可信任的态度担负打字工作.最后,我非常高兴地感谢我的老出版商 Springer- Verlag米纳我的新书,以开始一套新的大学教程丛书钟开莱1974年3月第二版序言为『改正第一版中的镨误,做了坚决的努力.帮助我完成这工作的有以下各位: Chao Hung-po,J.L.Doob,R.M. Exner,W. H Fleming, A M. Gleason, Karen Kafador, s.H. Polit FhP. van moerbeke. Kafador女士和Poit博土提出了一份特别仔细的建议清单.最使人生气的错误,出现在习题的解答中.我检查了第一至第五章,Chao先生检套了第六至第八章的所这些错误.我强烈地希鲲继线残留在这一范围的镨误不大可能有了.还作了一些小的改进和增加,但在这一点上并不是所有的劝告都可以遵行的.恳切希望使用这本书的人提出批评和意见,以便将来再版中研究采用.我还要感谢 Springer-Verlag的工作人员,他们使这乍书出版后这样快就出了修订版钟开莱目录序■■■↓■■■督■ψ山晉血·■■中■■■血■■■昏4山■■■h■■凸唱昏卿甲噜中自自h唱■■自■第一章集合■自ψ自■■鲁自↓自自鲁■q■_Pψ自卓自卩自自■●■·p■P自卓·■P甲音■号P甲■自白白·音口··血§1.1.祥木集合山中4白■■号司平p■P甲P鲁4p省甲甲■p■甲Pm甲p中甲d◆k中■m§1.2.集合运算§.3.各种关系"甲··d甲m旷音中学中d司甲甲面qmhψb甲ψd面■■日音h暑■"「·■81.4.桁示子h晶甲曾T日甲q甲"甲-甲如■■·P■俨md山h·t血↓包■【■冒习题h日甲日h血■·■幽■b■白■日■■甲■■平曾■「省·甲-l8第二章概率………………………………2§2.1.概率的例了20§2.2.定义和例子了…24§2.3.公理的推论……………………………………………………32豸2.4.独立事供甲噌普P血即白幽备§2.5.算木密度…………………………*44题…5第三计数*…““4933.1.基本法则…493.2,各种取祥方式…………………………………………·5333.分配模型,二项系数…■■■1■甲【■口甲■甲!蚤■■59F3.4,怎样求解………68习题了8第四章随机变量……………………………"“82§4.1.什么是一个随机变量?……■口鲁■甲■■■■82842.随机变量是怎样产生的?……………………"864,3.分布和望………………93§4.4,取整数值的随机变量白■dd4■昏44……………100ε4,5,具存密度的随机变量………4.6.一般情况………参甲"117■鲁■■■b鲁■■■■昏■■■面■鲁4山■【■■■■■…MM…4M]22附录1波雷尔城和一般的随机变虽…■會甲■噜■■鲁?■鲁■血鲁個由[幽噜血_鲁個會■■26第五章条件性和独立性…………………………………………129条件性的例子……………………………………………129§5.2,基木公式血甲嚯噜中■■會會■■血·13585.3.*序贯抽样∵§5.4.*卜里耶的坛子模型………………………………-………15且§5.5.独立性和关联性…………Tψ口山■d聊ψψ司聊■b■■聊血■hbd■4■■面■;聊p159§5.6.*遗传模型……………………………………………171习題………………177第六章平均值,方差和变换…18386.3,期塑的基本性质………………………………r-………………183§6.2,密度的情况『■『■中↓冒4唯中1咽早tT昏中-188§63.乘法定理方差和协方差………193§6.4,多項分布………*…………“…………………………"201落6.5,母函数和其他…………………*…208习题217第七章普咤松分布和正态分布■··『·■·白·ψ司●自■t■·山山2247.1,普哇松分布的模型r…"*…2487z.普哇松过程…………………………………………………23373,由二项分布到正态分布早卜卜吾早4b■444·■!4■■·■已587,4,正态分布會■…………………25375.中心极限定理會■中口血一………-………257§7.6.大数定律…"……"…………264习题………………"…………………272爾录2斯梯林公式和德莫哇佛→拉普拉斯定理276第八章从随机游动到马尔可夫链·279§8、1、流浪者或赌徒朐问题……………………………*……27998,2,板限模型……………………………………………………………286§8.3,转移概率■q『d■跏■卜县啬■警白■■卜■■b冒甲■bP4d■普■中■冒即即……293§8.4,马尔可夫链的基本结构……………………………303§8.5.进一步的发展■凸■Pψ‘■■自■■曾血■血■鲁P■■■日■啁·■4自■日自即■血4自L■血§8.6.意定状态…§8.7,绡束还继续搞下去?4·336习题……………………………*………………………………347附录3鞅甲■dqL■■■■■血■▲dP甲hψ自甲甲■看………36一般参考文献"…."!358只题答案……………359索引…376
- 2020-11-28下载
- 积分：1
MicroElectronic Circuit Design
微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221
- 2020-12-10下载
- 积分：1
