MicroElectronic Circuit Design
微电子电路设计第五版,Richard C. Jaeger, Traveis N. Blalock编著。FIETH EDITIONMICROELECTRONICHM-M- CIRCUIT DESIGNRICHARD C. JAEGERAuburn UniversityTRAVIS N. BLALOCKUniversity of VirginiaMcGrawEducationGrawEducationMICROELECTRONIC CIRCUIT DESIGN. FIFTH EDITIOPublished by McGraw-Hill Education, 2 Penn Plaza, New York, NY 10121 CopyrightC 2016 by McGraw-Hill EducationAll rights reserved. Printed in the United States of America. Previous editions 2011, 2008, and 2004. No part of thispublication may be reproduced or distributed in any form or by any means, or stored in a database or retrieval system,without the prior written consent of McGraw-Hill Education, including, but not limited to, in any network or otherelectronic storage or transmission, or broadcast for distance learninSome ancillaries, including electronic and print components, may not be available to customers outside the United StatesThis book is printed on acid-free pape1234567890DOw/DOw1098765ISBN978-0-07-352960-8MHID0-07-352960-5sident Products markets Kurt LVice President, General Manager, Products Markets: Marty Langece President, Content Design Delivery: Kimberly Meriwether DavidManaging director: Thomas TimpGlobal Publisher Raghu srinivasanDirector. Prodrelopment: RoDirector, Digital Content Development: Thomas Scaife, Ph DProduct develoVincent brashMarketing manager: Nick Mc faddenDirector, Content Design Delivery: Linda avenariusProgram meSchillingContent Project Managers: Jane Mohr, Tammy Juran, and Sandra M. SchneeBuyer: Jennifer PickelDesign: Studio Montage, St Louis, MOContent Licensing Specialist: DeAnna DausenerCompositor: MPS LimitedPrinter.R. DonnellAll credits appearing on page or at the end of the book are considered to be an extension of the copyright pageLibrary of Congress Cataloging-in-Publication DataJaeger. Richard cMicroelectronic circuit design/Richard C. Jaeger, Auburn University,Travis N. Blalock, University of Virginia. --Fifth editionpages cmIncludes bibliographical references and indexISBN978-0-07-352960-8(alk. paper)-ISBN0-07-338045-8(alk. paper)d 1. Integrated circuits--Design and construction. 2. Semiconductors--Design and construction. 3. Electronic circuitesign. I. Blalock, Travis N. Il. TitleTK7874.J3332015621.3815-dc232014040020The Internet addresses listed in the text were accurate at the time of publication. The inclusion of a website does not indicatean endorsement by the authors or McGraw-Hill Education, and McGraw-Hill Education does not guarantee the accuracy ofthe information presented at these siteswww.mhhe.comTOTo Joan, my loving wife and life long partnerRichard C. JaegerIn memory of my father, Professor Theron vaughnBlalock, an inspiration to me and to the countlessstudents whom he mentored both in electronicdesign and in life.Travis n blalockBRIEF CONTENTSPreface xxChapter-by-Chapter Summary XXV12 Operational Amplifier Applications 685PART ONE13 Small-Signal Modeling and LinearSOLID-STATE ELECTRONICS AND DEVICESAmplification 77014 Single-Transistor Amplifiers 8411 Introduction to Electronics 32 Solid-State Electronics 4115 Differential Amplifiers and Operational Amplifier3 Solid-state Diodes and Diode circuits 72Design 9524 Field-Effect Transistors 14416 Analog Integrated Circuit Design Techniques 10315 Bipolar Junction Transistors 21517 Amplifier Frequency Response 111318 Transistor Feedback Amplifiers andPART TWOOscillators 1217DIGITAL ELECTRONICSAPPENDICES6 Introduction to Digital Electronics 2837 Complementary MOS (CMOS) Logic Design 359A Standard Discrete Component Values 12918 MOS Memory Circuits 414B Solid-State Device Models and sPIce simulationParameters 12949 Bipolar Logic Circuits 455C TWo-Port Review 1299PART THREIndex 1303ANALOG ELECTRONICS10 Analog Systems and Ideal OperationalAmplifiers 51711 Nonideal Operational Amplifiers and FeedbackAmplifier Stability 587CONTENTSPreface xxCHAPTER 2Chapter-by-Chapter Summary XXVSOLID-STATE ELECTRONICS 41PART ONE2.1 Solid-State Electronic materials 432.2 Covalent bond model 44SOLID-STATE ELECTRONICS2.3 Drift Currents and mobility inAND DEVICES 1Semiconductors 472.3.1 Drift Currents 47CHAPTER 12.3.2 Mobility 48INTRODUCTION TO ELECTRONICS 32.3.3 Velocity Saturation 482.4 Resistivity of Intrinsic Silicon 491.1 A Brief History of Electronics: From2.5 Impurities in Semiconductors 50Vacuum Tubes to Giga-Scale Integration 52.5.1 Donor Impurities in silicon 511.2 Classification of Electronic Signals 82.5.2 Acceptor Impurities in Silicon 511.2.1 Digital signals 92.6 Electron and hole concentrations in1.2.2 Analog Signals 9Doped semiconductors 511.2.3 A/D and D/A Converters--Bridging2.6.1Type Material (ND >NA)52the analog and Digital2.6.2 p-Type Material (N,A>ND)53Domains 102.7 Mobility and Resistivity in Doped1.3 Notational conventions 12Semiconductors 541.4 Problem-Solving Approach 132.8 Diffusion currents 581.5 Important Concepts from Circuit2. 9 Total Current 59Theory 152.10 Energy Band Model 601.5.1 Voltage and current Division 152.10.1 Electron-Hole pair generation in1.5.2 Thevenin and norton circuitan intrinsic semiconductor 60Representations 162.10.2 Energy Band Model for a Doped1.6 Frequency Spectrum of ElectronicSemiconductor 61Signals 212.10.3 Compensated semiconductors 611.7 Amplifiers 222.11 Overview of Integrated circuit1.7.1 Ideal operational amplifiers 23Fabrication 631.7.2 Amplifier Frequency Response 25Summary 661.8 Element Variations in Circuit Design 26Key Terms 671.8.1 Mathematical modeling ofReference 68Tolerances 26Additional Reading 681.8.2 Worst-Case Analysis 27Problems 688.3 Monte Carlo analysis 291.8.4 Temperature Coefficients 32CHAPTER 31.9 Numeric Precision 34SOLID-STATE DIODES AND DIODE CIRCUITS 72Summary 34Key Terms 353.1 The pn Junction Diode 73References 363.1.1 pn Junction Electrostatics 73Additional Reading 363.1.2 nternal diode currents 77Problems 363.2 The i-v Characteristics of the diode 78VIllContents3.3 The Diode Equation: A Mathematica3.15 Full-Wave Bridge Rectification 123Model for the diode 803.16 Rectifier Comparison and Design3.4 Diode Characteristics under reverse, ZeroTradeoffs 124and forward bias 833.17 Dynamic Switching Behavior of the Diode 1283.4.1 Reverse bias 833.18 Photo diodes, solar cells, and3. 4.2 Zero bias 83Light-Emitting Diodes 1293.4.3 Forward Bias 843.18.1 Photo diodes and3.5 Diode Temperature Coefficient 86Photodetectors 1293.6 Diodes under reverse bias 863.18.2 Power Generation from Solar Cells 1303.6.1 Saturation Current in real3.18. 3 Light-Emitting Diodes(LEDs)13Diodes 87Summary 1323.6.2 Reverse Breakdown 89Key Terms 1333.6.3 Diode model for the breakdownReference 134Region 90Additional Reading 1343.7 pn Junction Capacitance 90Problems 1343.7.1 Reverse bias 903.7.2 Forward Bias 91CHAPTER 43.8 Schottky Barrier Diode 933.9 Diode SPICE Model and layout 93FIELD-EFFECT TRANSISTORS 1443.9.1 Diode Layout 944.1 Characteristics of the MOS Capacitor 1453.10 Diode Circuit Analysis 954.1.1 Accumulation Region 1463.10.1 Load-Line Analysis 964.1.2 Depletion Region 1473.10.2 Analysis Using the Mathematical4.1.3 Inversion Region 147Model for the diode 974.2 The nmos transistor 1473.10.3 The Ideal diode model 1014.2.1 Qualitative i-v Behavior of the3.10.4 Constant Voltage Drop Model 103NMOS Transistor 1483.10.5 Model Comparison and4.2.2 Triode Region Characteristics ofDiscussion 104the nmos transistor 1493.11 Multiple-Diode Circuits 1054.2.3 On Resistance 1523.12 Analysis of Diodes Operating in the4.2.4 Transconductance 153Breakdown Region 1084.2.5 Saturation of the i-v3.12.1 Load-Line Analysis 108Characteristics 1543.12.2 Analysis with the Piecewise4.2.6 Mathematical model in theLinear model 108Saturation (Pinch-off)3.12.3 Voltage regulation 109Region 1553.12.4 Analysis Including Zener4.2.7 Transconductance in saturation 156Resistance 1104.2.8 Channel-Length Modulation 1563.12.5 Line and Load Regulation 1114.2.9 Transfer characteristics and3.13 Half-Wave Rectifier Circuits 112Depletion-Mode MosFETs 1573.13.1 Half-Wave Rectifier with resistor4.2.10 Body Effect or SubstrateLoad 112Sensitivity 1593.13.2 Rectifier Filter Capacitor 1134.3 PMOS Transistors 1603.13.3 Half-Wave Rectifier with rc load 1144.4 MOSFET Circuit Symbols 1623. 13.4 Ripple Voltage and Conduction4.5 Capacitances in MOS Transistors 165Interval 1154.5.1 NMOs Transistor Capacitances in3.13.5 Diode Current 117the Triode region 1653.13.6 Surge Current 1194.5.2 Capacitances in the Saturation3.13.7 Peak-Inverse-Voltage(PlV)Rating 119Region 1663.13.8 Diode Power Dissipation 1194.5.3 Capacitances in Cutoff 1663.13.9 Half-Wave Rectifier with Negative4.6 MOSFET Modeling in SPICE 167Output Voltage 1204.7 MOS Transistor Scaling 1683.14 Full-Wave Rectifier Circuits 1224.7.1 Drain Current 1693. 14.1 Full-Wave Rectifier with Negative4.7.2 Gate Capacitance 169Output Voltage 1234.7.3 Circuit and power densities 169ContentsIX4.7.4 Power-Delay Product 1705.3 The pnp Transistor 2234.7.5 Cutoff Frequency 1705.4 Equivalent Circuit Representations for the4.7.6 High Field Limitations 171Transport Models 2254.7.7 The unified mos transistor model5.5 The i-v Characteristics of the bipolarIncluding High Field Limitations 172Transistor 2264.7.8 Subthreshold conduction 1735.5.1 Output Characteristics 2264.8 MOs Transistor Fabrication and layout5.5.2 Transfer characteristics 227Design Rules 1745.6 The Operating Regions of the Bipolar4.8.1 Minimum Feature size andTransistor 227Alignment Tolerance 1745.7 Transport Model Simplifications 2284.8.2 Mos Transistor Layout 1745.7.1 Simplified Model for the Cutoff4.9 Biasing the NMOS Field-EffectRegion 229Transistor 1785.7.2 Model Simplifications for the4.9.1 Why Do We Need Bias? 178Forward-Active Region 2314.9.2 Four-Resistor Biasing 1805.7.3 Diodes in Bipolar Integrated4.9.3 Constant Gate-Source VoltageCircuits 237Bias 1845.7.4 Simplified Model for the4.9.4 Graphical analysis for theReverse-Active Region 238Q-Point 1845.7.5 Modeling Operation in the4.9.5 Analysis Including Body Effect 184Saturation Region 2404.9.6 Analysis Using the Unified5.8 Nonideal Behavior of the bipolarModel 187Transistor 2434.10 Biasing the PMos Field-Effect Transistor 1885.8.1 Junction Breakdown Voltages 2444.11 The junction Field-Effect Transistor5.8.2 Minority-Carrier Transport in theUFET190Base Region 2444.11.1 The JFET With Bias Applied 195.8.3 Base Transit time 2454.11.2 JFET Channel with Drain-Source5.8.4 Diffusion Capacitance 247Bias 1935.8.5 Frequency Dependence of the4.11.3 n-Channel jfet i-v Characteristics 193Common-Emitter current gain 2484.11.4 The p-Channel JFET 1955.8.6 The Early Effect and Early4.11.5 Circuit Symbols and JFET ModelVoltage 248Summary 1955.8.7 Modeling the Early Effect 2494.11.6 JFET Capacitances 1965.8.8 Origin of the Early Effect 2494.12 JFET Modeling in Spice 1965.9 Transconductance 2504.13 Biasing the JFET and Depletion-Mode5.10 Bipolar Technology and sPiCe Model 251MOSFET 1975.10.1 Qualitative Description 251Summary 2005.10.2 SPICE Model Equations 252Key Terms 2025.10.3 High-Performance BipolarReferences 202Transistors 253Problems 2035.11 Practical bias circuits for the bjt 2545.11.1 Four-Resistor bias network 256CHAPTER 55.11.2 Design Objectives for theBIPOLAR JUNCTION TRANSISTORS 215Four-Resistor bias network 2585.11.3 terative Analysis of the5.1 Physical Structure of the BipolarFour-Resistor bias circuit 262Transistor 2165.12 Tolerances in bias circuits 2625.2 The Transport Model for the npn5. 12.1 Worst-Case Analysis 263Transistor 2175. 12.2 Monte Carlo Analysis 2655.2.1 Forward Characteristics 218Summary 2685.2.2 Reverse Characteristics 220Key Terms 2705.2.3 The Complete Transport ModelReferences 270Equations for Arbitrary BiasProblems 271Conditions 221
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adams仿真案例讲解
adams分析实例，定轴轮系和行星轮系传动模拟和仿真3.5在 ADAMS/view中位置方向库中选择位置旋转( Position: Rotate.)图标一,在角度(Ange一栏中输入90,表示将对象旋转90度。如图3-3所示。在 ADAMS/View窗口中用鼠标左键选择圆柱体,将出来一个白色箭头移动光标,使白色箭头的位置和指向如图3-8所示。然后点击鼠标左键,旋转后的圆柱体如图3-9所示。gravity图3-8圆柱体的位置旋转图3-9旋转90后的圆柱体4.创建旋转副、齿轮副、旋转驱动4.1选择 ADAMS/wiew约束库中的旋转副( Joint: Revolute图标。,参数选择2Bod1loc和 Normal to grid,在ADAMS/view工作窗口中先用鼠标左键选择齿轮(PART2)然后选择机架( ground),接着选择齿轮上的PART2cm如图4-1所示。图中显亮的部分就是所创建的旋转副( JOINT_1该旋转副连接机架和齿轮,使齿轮能相对机架旋转4-1齿轮上的旋转副4.2再次选择 ADAMS/iew约束厍中的旋转副( Joint:Revolute)图标参数选择2Bod-1Loc和 Normal ToGrid。在 ADAMS/wew工作窗口中先月鼠标左键选择齿轮PART3),然后选择机架〔 ground),接着选择齿轮上的PART3.cm,如图4-2所示。图中显亮的部分就是所创建的旋转副( JOINT_2)该旋转副连接机架和齿轮使齿轮能相对机架旋转图42蜗杆上的旋转副43创建完两个定轴齿轮上的旋转副后,还要创建两个定轴齿轮的啮合点( MARKER)。齿轮副的啮合点和旋转刮必须有相同的参考连杆(机架),并且啮合点Z轴的方向与齿轮的传动方向相同。所以在本题中,啮合点( MARKER)必须定义在机架( ground)上,机架可以看作机架选择 ADAMSAVIew工具箱的动态选择( Dynamic Pick)图标,将两个齿轮的啮合处进行放大,再选择动态旋转图标鬥,进行适当的旋转。选择 ADAMS/View零件库中的标记点工具图标数选择如图4-3所示。选择坐标为(100,50,0),如图4-4所示,图中显亮的部分就是所创建的啮合点( MARKER14)。MarkerAdd to groundLyOrientati onlobal xY图4-3标记点的选项图44蜗轮蜗杆的啮合点4.4下面将对上面做出的啮合点进行位置移动和方位旋转,使该啮合点位于两齿轮中心线上,并使啮合点的Z轴方向与齿轮旋转方向相同。在ADAMS/View窗口中,在两个齿轮啮合处点击鼠标右键,运择 - Maker:rr-Clr de: CYLINDER_1MARKER14 Modify,如图45所示。在弹出的对话框中,将 LocationAl: raSelct栏的值1000.50.0,00改为100.0,25,00(位置移动)将 Orientation栏中的值0.0,0.0,0.0修改为0,90,0方位旋转)如图46所示。点击对话椎下而的OKApea『ane键讲行确定,旋转后的啮合点( MARKER_14)如图4-7所不。从图中可以看出,啮合点的Z轴(蓝色)Z轴的方向与齿轮的啮合方向相同图4-5属性修改对话框Nanedingzhoulaensi two. cround MARKER_ 7Inn n. 25. nLocation Relative Ta. dingzhouluerutitws0.0,90.0,0.0Ori entation Relative Td. dingzhoulueas i twoirer」[spy]a0写糖图4-7旋转后的啮合点图4-6进行坐标轴的旋转45选择 ADAMS/View约束库中的齿轮副(Gear)图标在弹出的对话框中的 Joint Name栏中,点击鼠标右键分别选择 JOINT1、JONr2。如图4-7所示。在 Common Velocity Marker栏中,点击鼠标右键选择啮合点( MARKER14)。如图4-8所示,然后点击对话框下面的OK按钮,两个齿轮的齿轮副创建出来,如图49所示1 Constraint Create Complex Joint Gearme[mhte×1cmmndingrhoulNeni GEAR 1Gear Nemedinczhouluenxi two GEAR_1Adms工dCommentsJoint NameN 1, JOINT 2Common Velocity MarkerCommon veloci ty Markey鬥 AREER1ParameterizedingzhouluenxiApplyCaneelJoINT 247齿轮副的创建对话框图48齿轮副的创建要素图4-9定轴齿轮的齿轮副46在 ADAMS/View驱动库中选择旋转驱动( Rotational joint Motion)按钮,在sped-栏中输入360,360表示旋转驱动每秒钟旋转360度。在 ADAMS/View工作窗口中,两个齿轮中仟选一个作为丰动齿轮,本设计中选择左边的齿轮(红色的),用鼠标左键点击齿轮上的旋转副( JOINT1),一个旋转驱动创建出来,如图4-10所示,图中显亮的部分为旋转驱动。图4-10齿轮上的旋转驱动5仿真模型5.1点击彷真按钮圖设置仿真终止时间〔 End Time冫为1,仿真工作步长( Step Size)为0.01然后点击开始仿真按钮进行仿真52对小齿轮的进行运动分析。因为太齿轮的齿数为x1=50,小齿轮的齿数2=25,模数m=4mm,因此根据机械原理可以知道,对于标准外啮合渐开线直齿圆柱体齿轮传动,小齿轮的转速为大齿轮的2倍。对小齿轮的旋转副 JOINT2进行角位置分析。在 ADAMS/View工作窗口中用鼠标右键点击小齿轮的旋转副JOINT2,选择 Modify命令,如图5-1所示,在弹出的修改对话框中选-CyInder: CYUND-R 2择测量( Measures)图标如图52所示。在弹出的测量对话框中-M=rsr:cri-Marker: MAR ER 5将 Characteristic栏设置为Ax/Ay! Az Projected Rotation,将st gourdComponent栏设置为Z,将From/At栏设置为PART3. MARKER5(或者ground MARKER6),其他的设置如图5-3所示。然后点击对话框下面的Jark::JoI_2OK”确认。生成的时间-角度曲线如图5-4所示。1 Joint MeasureMeasure namedingchouluensi two. JOINT_2 MEA 2JointJUINT 2Characteristic: Art/ Ay/Ar Projected Rotation图5-1旋转副属性修改命令ComponentC(ZFrom/此tC PART 3, MARKER 5tameI 2HARKER 6Crientati onSecond BodyRepresent coordinates inTypel revoluteForce Display Honev Create Strip Chartpose Mations)图5-3测量力对话框的设置团网」」_sy」cd图5-2修改对话框1 J0INT_2_MEA_17500Tine:1.000Current: 72037500.510图54时间和角度的曲线图由图5-4可以知道,当大齿轮每秒逆时针转过360度时,小齿轮顺时针转过的角度为720度符合标准外啮合渐开线直齿圆柱体齿轮传动角速度与齿轮的分度圆半径成反比。ADAMS分析实例-定轴轮系和行星轮系传动模拟有一对外聩合洧开线直圆柱体齿轮传动已知x1=50,32=25,m=4mm,=20°。两个齿轮的厚度都是5mm。1.启动 ADAMS双击桌面上 ADAMS/View的快捷图标,打开 ADAMS/View在欢迎对话框中选择“ Create a new model”,在模型名称( Model name)栏中输入; xingxingchiluen:在重力名称( Gravity)栏巾选择“ Earth normal(- Global y)”;在单位名称( Units)栏中选择“MMKS-mm,kg, N s, deg”。如图1-1所示。How would you l:ke to proceed?C Open an existing databaseImport a fileADAMSStart it D: AllAlS12Model name ing:ingchiluenGravity Earth Normal (-Global r)inits MMES-m,kg趴,degWurkiny Gril Fellingsv Show冒 orkime Grid图1-1欢迎对话框C Rectangular C Folar2.设置工作环境2.1对于这个模型,网格间距需要设置成更高的精度以满足要求。szC750mn)(500mm)在 ADAMS/View菜单栏中,选择设置(〈stim)下拉菜单中的工作sp网格( Working grid)命令。系统弹出设置T作网格对話框,将网格ColorWeight的尺寸Sie)中的X和Y分别设置成750mm和500m,间距( Spacing) Dots Contrast1中的X和Y都设置成50mm。然后点击“OK”确定。如图21所表 Ares Contrast1Lines Contrast厂 Triad Solid2.2用鼠标左键点击选择( Select)图标,控制面板出现在| Set location工具箱中。Set orientationQ23用鼠标左键点击动态放大( Dynamic Zo0m)图标Applyance在模型窗口中,点击鼠标左键并按住不放,移动鼠标进行放大或缩小。创建齿轮图2-1设置工作网格对话框3.1在 ADAMS/View零件库中选择圆柱Cylinder体 Cylinder)图标参数选择为“NewNew PartPart”,长度( Length)选择50mm(齿轮Y Length的厚度),半径( Radius)选择100mmm×ZV Radius210))。如图31所示。4×50100图3-1设置圆柱体选项3.2在 ADAMS/view工作窗凵中先用鼠标任意左键选择点(,,0)mm,然后选择点(0,50,0)。则一个圆柱体(PART2)创建出来。如图3-2所示。3-2创建圆柱体(齿轮)33在 ADAMS/iew中位置/方向库中选择位置旋转( Pusillum: Rotate,,)Selectedopy图标,在角度(Ange一栏中输入90.表示将对象旋转90度。如图33| About所示。在 ADAMS/wiew窗口中用鼠标左键选择圆柱体,将出来一个白色箭Angle头,移动光标,使白色箭头的位置和指向如图3-4所示。然后点击鼠标左键旋转后的圆柱体如佟3-5所示。图3-3位置旋转选项图3-4圆柱体的位置旋转35旋转90后的圆柱体34在 ADAMS/View零件库中选择圆柱体( Cylinder)图标,参数选择为“ New part”,长度( Length)选择50mm(齿轮的厚度),半径( Radius)选择50mm(m×z4×25=50)如图3-1所示。在 ADAMS/iew工作窗口口先用鼠标左键选择点(150,0,0)mm,然后选择点(150,50,0)。则一个圆柱体(PART3)创建出来。如图3-6所小。图3-6创建圆柱体(齿纶)3.5在 ADAMS/View中位置/方向库中选择位置旋转( Position: Rotate.)图标"一,在角度(Ange)一栏中输入90,表示将对象旋转90度。如图3-3所示。在 ADAMS/View窗口中用鼠标左键选择圆柱体,将出来一个自色箭头,移动光标,使白色箭头的位置和指向如图3-7所示。然后点击鼠标左键,旋转后的陨柱体如图3-8所示。3-7圆柱体的位置旋转图3-8旋转90后的圆杜体36在 ADAMS/VIew零件库中选择杆仁ik图标,,参数选择为如图39所示。在 ADAMS/View工作窗口中先用鼠标左键选择点PART2 MARKER1,然后选择点PART3 MARKER2。则一个连杆(PART4)创建出来。如图3-10所示。图3-10创建的连杆4.创建旋转副、齿轮副、固定副、旋转驱动4.1在本改计选择左边的齿轮(红色的)为固定齿轮选择 ADAMSaView约束库中的旋转副( Joint: Revolute)图标参数选择2Bod-1Loc和 Normal to grid。在ADAMS/View工作窗口中先用鼠标左键选择连杆aJ LDr3(PART_4),然后选择机架( ground),接着选择齿轮上的PART4 MARKER3,如图4-1所示。图中显亮的部分就是所创建的旋转副( JOINT1),该旋转副连接机架和连杆,使连杆能相对机架旋转。图4-1连杆的旋转别4.2再次选择 ADAMS/view约東库中的旋转副( Joint: Revolute)图标参数选择2Bod-lIoc和 Normal to grid。在 ADAMS/view工作窗口中先用鼠标左键选择齿轮(PART_2),然后选择连杆(PART_4),接着选择齿轮上的PART2cm(或者PART2 MARKER1),如图42所示。图中显亮的部分就是所创建的旋转副( JOINT2),该旋转副连接连杆和固定齿轮,使连杆能对固定齿轮旋转。因为 JOINT1和JOINT2重合在一起,所以从图4-2中区分不出来图4-2固定齿轮的旋转副43再次选择 ADAMS/view约束库中的旋转副( Joint: Revolute)饜标",参数近择2Bod-1Loc和Normal to grid。在 ADAMS/view工作窗口中先用鼠标左键选择齿轮(PART3),然后选择连杆(PART4),接着选择齿轮上的PART3cm(或者PART3 MARKER2),如图43所示。图中显亮的部分就是所创建的旋转副( JOINT3),该旋转副连接连杆和行星轮使迕杆能带动行星轮旋转。图4-3行星轮的旋转副44创建完两个齿轮和连杆上的旋转副后,还要创建两个齿轮的啮合点( MARKER)。因为行星轮要在定齿轮上做圆周运动,所以行星轮和固定齿轮的啮合点不是匝定不动的,它随着行星轮的运动而不断地变化,因此,可以把啮合点固定在连杆上,因为迕杆和行星轮一起做园周运动,并且两齿轮旋转中心的连线一定经过啮合点。下面我们将把啮合点围在连杆,并且使啮合点Z轴的方向与齿轮的传动方向相同。选择 ADAMS/view零件库中的标记点工具图标参数选择如图44所示。选择连杆(PART4)在选择连杆上点PART4cm,如图45所示,图中显亮的部分就是所创建的啮合点( MARKER_11)arherAdd to partOrientationGlobal xY图44标记点的选项图4-5固定齿轮和行星轮之间的啮合点45上面所创建的啮合点不在两个齿轮的分度圆的交线上,下面将对上面做出的啮合点进行位置移动和方位旋转使该啮合点位于两齿轮交线上,并仅啮合点的Z轴方向与齿轮旋转方向相同。在 ADAMS/VIew窗口中,在两个齿轮啮合处点击鼠标右键,选拦- Maker: MARKER14→ Modify,如图4-5所示。在弹出的对话框中,将 Location栏的值75.0.25.0,-25.改为100.0,25.0.-250(位置移动),将 Orientation栏中的值0.0.0.0.
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