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基于TI的无线充电资料，QI协议等重要文件SDONGGUAN SELMAG ELECTRONIC CO, LTDStronTogethe实现方法目前,对于在空间实现无线电力传输/供电的形式,主要有三种方案电磁波方案非辐射性谐振磁耦合方案3电磁威应方案SDONGGUAN SELMAG ELECTRONIC CO, LTDStronTogethe无线充电方式送电功率(w)充电使用频10006|率*范围传输距离电场耦合方式村田制作所竹中工务店10W产品接近实用化等正在研发中电磁感应方式已制定完成5以下的iFC开始制定标准并开始5~120实用化的标准多家公司正面92%2232数m数cm向汽车用途推已实现从小型终到产业没备的实用化进研发磁共振方式多家公司正多家公司展示试制机向汽车用户进95%13.56Hz|数cm数m无线电波方式公司展示试制机38|2.45GHz数mSDONGGUAN SELMAG ELECTRONIC CO, LTDStronTogethe电磁感应式无线充电:WPC-Q电源感应线较一般充电接收器放在电后面发射线圈充电圈内部有较多线圈,接收线圈方便在充电时在各个位置都能建立磁场充电板磁力线分布放在充电磁场的感应接收线线圈会产生感应电流充电板SDONGGUAN SELMAG ELECTRONIC CO, LTDStronTogethe电磁感应式无线充电:WPC-Q电源一成熟应用手机无线充电解决方案3D眼镜无线充电方案车载无线充电方案多功能手表无线充电方案日立麦克赛尔的无线充电器匚线圈"共计排列14个线围,可将立麦克赛尔的“ AIR VOLTAGE智能手机放置在充电座的SDONGGUAN SELMAG ELECTRONIC CO, LTDStTogethe电磁感应式无线充电WPcQ电源命命命令命命命any命命日产无线充电技术架命命构争令命命命命命今命命合中中中喝车品图Evatran公司推出新款无线充电站产品日产魔方电动车,一般可在78小时内完成充电SDONGGUAN SELMAG ELECTRONIC CO, LTDStronTogethe发射器无线充电站传统充电站无线充电柜■充电柜G础日l¤¤溢猫益溢发射番同时充电的汽车数目有限户外有线充电桩易受到侵害采用无线充电形式建专用充电站占用大量用地SDONGGUAN SELMAG ELECTRONIC CO, LTDStronTogethe种无线充电器发送和接收原理图BT124VFUSE1_1A C62200uF0.1001IC1S1继电器J3C578L12100uFD2发送AC220VLC4C1c川8LED11003300uFS3TX100KQ1RPR162v3K10KC2(F1,F2&F3)VCcc10R6Q590120191D5-D8mALED2(红)SWJT1接收R5R9vceR11C91MQ327K10KBT210K4.1R8R10

在电力电子装置中的一个重要组成部分,输入连接到控制电路的PWM信号输出端，输出连接到装置各IGBT的门极和发射极，将装置中的控制电路产生的数字PWM信号进行隔离传输和电平转换和功率放大,实现控制电路对IGBT进行开通和关断动作的控制，从而实现装置的功率变换功能。InfineontechnologiesIGBT Gate Drive: Power Suppliesa Gate driving voltage for IGBT+15Vturn-on is normally +15VDriver>□1a Gate driving voltage for IGBTOVturn-off can be oV or negativeWith Single Power Supply5V to-15V)a Negative gate driving voltage+15Vhelps IGBt switch off fasterremain in off state but itDriverneeds dual power suppliesOVWhether to use oV or negativegate driving voltage depends15VWith Dual Power Supplieson the requirement on costZH Liang - Al APperformance05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: InterfaceOpto-couplers is commonly used as interfacingdevices for applications where both signaltransmission and potential isolation are requiredOpto-couplers offers reliable isolation between IGBT(high-potential)& micro-controller(low-potential)Opto-couplers has long signal delay(us)and isexpensiveIsolation +VDpCCMicroDrivercontrollerZH Liang - Al AP05Dec2003Page 6for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Half-bridge DriveStandard configuration: 2 drivers, 2 power supplies, 2 opto-couplersAdvantages: standard, reliableDisadvantages: using opto-couplers, higher system costIsolation +VDDlCC1DriverCC1MicrocontrollerDD2+VCC2DriverCC2ZH Liang - Al AP05Dec2003Page 7for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Half-bridge DriveIn half-bridge IGBT drive, opto-couplers offer two functions(1)safety isolation &(2) shifting the potential of the gatesignal from uc potential to high-side potentialIf safety isolation between IGBT& micro-controller is notneeded, then"Level Shift" can replace opto-coupling andrealize function(2)OptoHigh-sideHigh-sidecouplerDriverIGBTMicro-Opto-LoW-sideLow-sidecontrollercouplerDriverIGBTZH Liang - Al AP05Dec2003Page 8for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive Level shiftI FeaturesHVc(600V/1200V)沿PULSERFILTERShort Signal DelayPULSE■Cost- effectiveGEN■ No Safety Isolationevel Shift Half-bridge DriverI BenefitHigh-side““°IGBTO Saving Opto-couplersLevel(lower system costShiftMicro● Wider range ofcontrollerLevelLow-side■■■■■直■口m留■Switching FrequencyShiftIGBT(higher flexibility)ZH Liang - Al AP05Dec2003Page 9for internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: CLTNEWO CLT-Coreless Transformer (for signal transmissionu Coils(Primary Secondary Side)realized on SiliconO Short Signal Delay (allowing high or low switching frequencyu Lower Cost(compared to 1200V level-shift driver日 Safety IsolationCLT Half-bridge DriverHigh-sideCLT Single DriverIGBTCLTMicro-controllerCLTIGBTMicro-controllerLoW-sideIGBTZH Liang - Al AP05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Boot-strapBoot-strap circuit includes only a diode and a capacitora In half-bridge drive, the boot-strap circuit can replace the high-sidepower supply and make single-supply operation possibleWhen the low-side IGBT (or FWD)is on, the diode is forwardbiased and the capacitor is charged by the low-side power supplyvia the low-side IGBT and stores the energyWhen the low-side IGBt(and FWD)is OFF, the diode is reversebiased and blocks the dc-bus voltage to protect the low-sidecircuit. Meanwhile, the capacitor supplies energy to the high-sidedriverThe boot-strap capacitance should be high enough to keep thesupply voltage stable Capacitance needed can be calculatedbased on the working conditions and device parametersZH Liang - Al AP05Dec2003agefor internal use onlyInfineon Technologies Asia PacificInfineontechnologiesIGBT Gate Drive: Boot-strap circuitConventional2心菲*|■3 high-side power supplies■1|oW- side power supplyUsing boot-strap circuit心体心心●3 diodes& capacitorso 1 low-side power supplyFeaturesa Diode: ultra-fast recoverya Capacitor: general-purposed ITAa Dependent on low-side IGBTBenefitsSaving 3 PS(transformer cost)22ZH Liang - Al AP05Dec2003Reducing wiring connectionPage 12for internal use onlyInfineon Technologies Asia Pacific