索尼 imx274 datesheet
imx274 datesheet，可以对接Hi3519V101，4K，分享一下SONYIMX274LQC-CAbsolute Maximum RatingsItemSymbolRatingsUnitSupply voltage(Analog)1ADD0.3to+3.3VSupply voltage(Digital 1)-0.5to+2.0Supply voltage(Digital 2)DDD20.5to+3.3VInput voltage(Digital)0.3toV。Dp+0.3VOutput voltage(Digital)-0.3toVD2+0.3Guaranteed operating temperature TOPR-30to+75°CStorage guarantee temperatureTSTG30to+80CPerformance guarantee temperature TsPEC10to+60Recommended Operating ConditionsItemSymbolRatingSupply voltage(Analog)VADD2.8±0.1Supply voltage(Digital 1)1.2±0.1VSupply voltage(Digital 2)1.8±0.1Input voltage(Digital)-0.1 to Vopp2+0.11 VADD: VDDSUB, VoDHCM, VoDHPX, VDDHDA, VDDHCP (2.8V power supplyVDDD1: VDDLCN, VDDLSC1 to 2, VDDLPA, VDDLPL1, VoDLPL2 to 3. VDDLIF (1.2V power supply)VDDD2: VDDMIO, VDDMIF (1.8V power supply)SONYIMX274LQC-CUSE RESTRICTION NOTICEThis USE RESTRIC TION NOTICE (Notice )is for customers who are considering or currently using theimage sensor products("Products")set forth in this specifications book. Sony Corporation Sony")mayat any time, modify this Notice which will be available to you in the latest specifications book for theProducts. You should abide by the latest version of this Notice. If a Sony subsidiary or distributor has itsown use restriction notice on the Products, such a use restriction notice will additionally apply betweerou and the subsidiary or distributor. You should consult a sales representative of the subsidiary ordistributor of sony on such a use restriction notice when you consider using the ProductsUse restrictionsThe Products are intended for incorporation into such general electronic equipment as office productscommunication products, measurement products, and home electronics products in accordance withthe terms and conditions set forth in this specifications book and otherwise notified by sony from timeYou should not use the Products for critical applications which may pose a life-or injury-threateningrisk or are highly likely to cause significant property damage in the event of failure of the products. Youshould consult your sales representative beforehand when you consider using the products for suchcritical applications. In addition, you should not use the products in weapon or military equipmentSony disclaims and does not assume any liability and damages arising out of misuse improper usemodification, use of the Products for the above-mentioned critical applications, weapon and militaryequipment, or any deviation from the requirements set forth in this specifications booklesign for SafetySony is making continuous efforts to further improve the quality and reliability of the products howeverfailure of a certain percentage of the products is inevitable. Therefore, you should take sufficient careto ensure the sate design of your products such as component redundancy, anti-contlagration featuresand features to prevent mIs-operation in order to avoid accidents resulting in injury or death fire orother social damage as a result of such failureExport ControlIf the Products are controlled items under the export control laws or regulations of various countriesapproval may be required for the export of the products under the said laws or regulationsYou should be responsible for compliance with the said laws or regulationsNo License Impliedo The technical information shown in this specifications book is for your reference purposes only. theavailability of this specifications book shall not be construed as giving any indication that sony and itscensors will license any intellectual property rights in such information by any implication or otherwiseSony will not assume responsibility for any problems in connection with your use of such information orfor any infringement of third-party rights due to the same. It is therefore your sole legal and financialresponsibility to resolve any such problems and infringementGoverning lawThis notice shall be governed by and construed in accordance with the laws of Japan, without referenceto principles of conflict of laws or choice of laws. All controversies and disputes arising out of or relatingto this Notice shall be submitted to the exclusive jurisdiction of the Tokyo district Court in Japan as thecourt of first instanceOther Applicable Terms and ConditionsThe terms and conditions in the Sony additional specifications, which will be made available to you whenyou order the Products, shall also be applicable to your use of the Products as well as to thisspecifications book. You should review those terms and conditions when you consider purchasingand/or using the ProductsGeneral-0.0. 8SONYIMX274LQC-CContentsDescription---FeaturesDevice structureOptical Black Array and Readout Scan Direction---Absolute Maximum Ratings2233Recommended Operating Conditions---------------USE RESTRICTION NOTICEContentsOptical CePin Configuration------------------Pin description-------------------------458899hen using csl-2When using Sub-LVDS1210 Equivalent Circuit Diagram15Peripheral Circuit19System OutlineWhen using CSl-2When using Sub-LVDSElectrical Characteristics when using cs1-2--------------------------m---------------------------------21. DC Characteristics(CS1-2)a.8..4Current Consumption and Gain Variable Range(CSl-2Supply Voltage and l/O Voltage(CS1-2)2. AC Characteristics(CS1-222INCK, XCLR(CSl-2)22XHS, XVS(Output)(CSI-2)22IC Communication (CSI-2)23DMCKP/DMCKN, DMO(CSl-2Electrical Characteristics When Using Sub-LVDs-------------------m--------------------------1. DC Characteristics(Sub-LVDs)……Current Consumption and gain Variable Range sub-LVDS24Supply Voltage and l/o Voltage(Sub-LVDSLVDS Output DC Characteristics(Sub-LVDS2. AC Characteristics ( Sub-LVDS).........25INCK, XCLR, XVS(input), XHS (input)(Sub-LVDS25Serial Communication(Sub-LVDS)Sub-LVDS Output(Sub-LVDS)26Spectral Sensitivity Characteristics(CS1-2 and Sub-LVDS27Image Sensor Characteristics(CSl-2 and Sub-LVDS)-281. Zone Definition of Image Sensor Characteristics28mage Sensor Characteristics Measurement Method(CSl-2 and Sub-LVDS)1. Measurement conditions2. Color Coding of this Image Sensor and Readout..293. Definition of Standard Imaging Conditions29Setting Registers Using I"C Communication(When Using CSl-2Description of Setting Registers When Using I C communication31Pin Connection of Serial Communication Operation Specifications When Using I"C CommunicationRegister Communication Timing When Using I-C Communication12C Communication Protocol32Register Write and Read33Single Read from Random Location33Single read from current location; iidaiaii:;aaaa“Sequential Read Starting from Random LocationSequential Read Starting from Current Location34Single Write to Random Location35Sequential Write Starting from Random Location35Register Value Reflection Timing to Output Data(CSl-2)36SONYIMX274LQC-CSetting Registers Using Serial Communication (When Using Sub-LVDS)----------------37Setting Registers Using Serial Communication(Sub-LVDS).37Register Value Reflection Timing to Output Data( Sub-LVDS38Register Map…391. Description of Register2. Register Setting for Each Readout Drive Modeeadout Drive Modes( csl-2 and Sub-LVDS)---------------------551. Readout drive modes552. Relationship between Arithmetic Processing and the Number of Output bits in Each Readout Drive ModeImage Data Output Format When Using CSI-2--------------------------58Frame Format (CSI-2)58Frame Structure(CSl-258Embedded Data Line(CSl-2)59CSl-2 serial Output Setting(CSl-2)MIPI Transmitter(CSl-2)62Detailed Specification of Each Mode(CSl-2)---------------631. Horizontal/ Vertical Operation Period in Each Readout Drive Mode(CSl-22. Frame Rate Adjustment(CSl-23. Image Data Output Format CSl-265Vertical Arbitrary Cropping Function(CSl-2)-69Horizontal Arbitrary Cropping Function(CSl-272Electronic Shutter Timing When Using CSI-2------741. SHR, SVR, SMD Setting When Using CSl-2741-1. SHR, SVR Setting(CSl-2)741-2. Electronic Shutter Drive Mode(Csl-2)752. Integration Time in Each Readout Drive Mode and Mode Changes When Using CSl-2762-1. Integration Time in Each Readout Drive Mode(CSl-2762-2. Operation when Changing the Readout Drive Mode(CSl-2772-3. Low Power Consumption Drive in Integration Time When Using Roll ing Shutter Operation(CSl-2)78Image Data Output Format When Using Sub-LVDS--791. Sync Signals and Data Output Timing(Sub-LVDS)““792. Output Range of LVDS Output Data(Sub-LVDS)Detailed Specification of Each Mode(Sub-LVDS)删mHorizontal/Vertical Operation Period in Each Readout Drive Mode(sub-LVDs)..........2. Frame Rate Adjus咖ment(Sub-LVDS)……3. Image Data Output Format ( Sub-LVDS)Vertical Arbitrary Cropping(Sub-LVDS)Horizontal arbitrary cropping function(Sub-LVDS)----m94Electronic Shutter Timing When Using Sub-LVDS961. SHR, SVR Setting(Sub-LVDS)...962. SVR Operation (Sub-LVDS3. Electronic Shutter Drive Mode( Sub-LVDS)974. Integration Time in Each Readout Drive Mode and mode changes When Using Sub-LVDS984-1. Integration Time in Each Readout Drive Mode(Sub-LVDS984-2. Operation when Changing the Readout Drive Mode(Sub-LVDS994-3. Recommended Global Reset Shutter Operation Sequence(Sub-LVDS)1004-4. Interruptive Mode Change(Sub-LVDS4-5. Low Power Consumption Drive in Exposure Time (Sub-LVDS)…102Power-on/off Sequence when using CSI-2---1031. Power-on Sequence(CS2)……1032. Slew Rate Limitation of Power-on Sequence( CSI-21033. Power-off Sequence(CSl-2104Standby cancel sequence when using csl-2--------------------------105Power-on/off Sequence when using Sub-LVDS1161. Power-on Sequence(Sub-LVDS)1062. Slew Rate Limitation of Power-on Sequence(Sub-LVDS).........1063. Power-off Sequence(Sub-LVDS)107Standby Cancel Sequence(Sub-LVDs)------------108SONYIMX274LQC-CSpot Pixel specifications--109Spot Pixel Zone Definition109Notice on White Pixels SpecificationsMeasurement Method for Spot Pixels1111. Black or white pixels at high light1112. White pixels in the dark.3. Black pixels at signal saturated111Spot Pixel Pattern Specifications----------------m---------------------------------------------------112Stain Specifications---113Stain Zone definition113Stain Measurement method.113Relation between Image height and target Cra-----Marking---------mm---------------115Notes on Handling116Package outline ---118List of Trademark Logos and Definition Statements-------------119SONYIMX274LQC-COptical Center(Top View)Package outline10.70±0.1mmPKG lpinM1A1Optical centerM1010See page TBD Package Outl ine" for detailsOptical CenterPin ConfigurationBottom View)lpin index6666δ画δ尚画○●Bottom viewQ§③¤¤意○○○○○○○○10○o⑦A b CE F GMPin configurationSONYIMX274LQC-CPin DescriptionWhen using CS1-2Pin descriptionState inSymbolOADRemarks(CS|-2Standby modeLeave openA2TEST4ATest(No connectionA3VDDHDa Power a Analog power supply (2.8V)A4VDD SUB PowerAnalog power supply(2.8VA5VDDLSC1PowerD Digital power supply(1.2v)A6VssLSC1GNDDDigital GND(1.2V)A7VDDLPL3 Power D Digital power supply (1.2 V)A8VDDLIFowerDigital power supply(1.2v)Leave openB1TEST5ATest(No connectionB2ssHDA GND A Analog GND (2.8V)B3BIASRESResister connectionB4/BGRCapacitor connectionB5GNDD Digital GND (1B6XCLRReset pulse inputB7VssLPL3GNDDigital GND (1.2VB8 VsSLIF1 GND D Digital GND (1.2V)B9DMO4NDigital MiPl outputLow LevelData lane 4connectionB10DMO4P。DDigital MIPl outputLow LevelData lane 4connectionC1TESt3TestLeave open(No connectionC2XCECannect to 1.8 V power supplyLeave openC3TEST1D(No connectionC4TEST2estLeave open(No connectionC5VDDLPAPowerDDigital power supply(1.2v)C6 VDDLPL2 Power D Digital power supply (1.2V)C7 VssLPL2 GND D Digital GND(1.2V)c9DMO2NDigital MIPl outputLow LevelData lane 2connectionData lane 2C10DMO2PDigital MIPl outputLow LevelconnectionD1XHSDDDDHorizontal sync signal outputIf unused xHsleave openD2SDOlest outputLow Leve/ Leave openNo connectionVertical sync signal outpuf unusedⅩVSDleave openD9DMCKND Digital MIPl outputLow LevelClock laneconnectionD10DMCKPDigital MIPl outputLow levelClock LaneconnectionE1SCLDDDc communication clock inputC communication dataE2SDAOinput/outputSONYIMX274LQC-CPinPin descriptionSymbolADState inRemarksNoCS-2Stand by modeE3VSSLCBGNDDigital GND(1.2 V)E8VssLlF2GNDDigital GND(1.2 V)E9DMO1NE10DMO1POFVDDLSC2 PowerF2VssLSC3 PowerDDDDDDADData lane 1Digital MIPl outputLow LevelconnectionData lane 1Digital MIPI outputLow LevelconnectionDigital power supply (1.2 V)Digital power supply (1.2 v)F3VopHCMPowerAnalog power supply(2.8 V)F8INCKInput clockDMO3NDigital MIPl outputData lane 3Low LevelconnectionF10 DMO3PData lane 3Digital MIPI outputLow LevelconnectionG3VssHCPGNDAAnalog GND (2.8V)G8VssLSC2 GND D Digital GND(1.2V)G9VssMIF2 GNDD Digital GND (1.8VG10VoDMIFPowerDDigital power supply (1.8V)H1VDDLCN GND D Digital GND(1.2V)VsSLCNGNDDigital GND (1.2 VH3VopHCPPowerAnalog power supply(2.8VDLO2P( Pin for Sub-LVDS)Leave open(No connectionH9DLO2M000(Pin for Sub-LVDS)Leave open(No connectiH10DLOOP(Pin for Sub-LVDS)Leave open(No connection)VssHPX3 GND AAnalog GND(2.8 V)J3VoDHPXPowerDLO3PADDDAADDAnalog power supply(2.8 V)(Pin for Sub-LVDS)Leave open(No connectionDLO3MO00(Pin for Sub-LVDS)Leave open(No connection)J10DLOOMD(Pin for Sub-LVDS)eave open(No connection)K2VssLPL 1GNDDDigital GND(1.2V)K3 VDDLPL1 Power D Digital power supply(1.2V)K4VoDMIO Power D Digital power supply(1.8V)K5DLO1M(Pin for Sub-LVDS)Leave open(No connectionDLCKM0b「(Pin for Sub-LVDS)Leave open(No connection)Leave openK7DLCKPD(Pin for Sub-LVDS(No connectionLeave openK8DLO9PD(Pin for Sub-LVDS)(No connectionLeave openK9DLO9M(Pin for Sub-LVDS)(No connectionK10DLO5P(Pin for Sub-LVDS)Leave openNo connection
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时域有限差分法 (高本庆)
时域有限差分学习书籍，有研究FDTD方法的可以学习学习国防科技图书出版基金第二届评审委员会组成人员名誉主任委员怀国模主任委员黄宁副主任娄员殷鹤龄高景德陈芳允曾铎员尤子平朱森无朵英贤按姓氏笔划为序)刘仁何庆芝何因伟何新贵宋家树张汝果范学虹胡万忱柯有安侯迁候正明莫梧生崔尔东秘书长刘琯德时域有限差分法(Fnte- Differerce Time-Domain Method简称FDTD Method)是求解电磁问题的种数值技术,它是在1966年由K.S.Yee第一次提出的。fDTD法直接将有限差分式代替麦克斯韦时域场旋度方程中的微分式,得到关子场分量的有限差分式,用具有相同电参量的空间网格去模拟被研究体,选取合适的场初始值和计算室间的边界条件,可以得到包括时间变量的麦克斯韦方程的四维数值解。通过傅里叶变换可求得三维空间的频域解20多年来FDTD法历经了一个蓬勃发展的过程。最初是用它来求解金属体上的散射问题,用的是笛卡尔坐标系,使空间单元网格呈直角六面体。鉴于当时的计算机容量水平,特别是FDTD技术本身尚有若重要问题未很好解决,使得早期的数值精度不够高,应用范围也不很广,这种局面大约延续到70年代末期。随着FDTD技术的发展,首先需要解决的是有限计算空间的无反射截断问题,早期采用的一种方法是加大边界与散射体间距离,以在边界上构成外向行波,这种方法精度不高、计算空问亦大。直到将波方程的二阶近似用以处理边界上的场值,得到了较好近似的吸收边界条件,才将这个间题的解决向前推进了一大步在直角坐标系中用FDTD技术进行模拟时,光滑曲线形媒质表面将呈锯齿形状这可能产生沿面的表面波,加大了数值色散误差,解决这个问题的有效方法是“共形”技术的提出,这包括:或是使用曲线坐标系使媒质表面与坐标曲线共形,或是在直角坐标系中改变媒质介面上的网格形状,使二者共形,利用共形网格明显提高了计算精度。在类电磁问题中,当媒质结构尺寸比网格尺寸小时(如细线、窄槽或薄介质层等),将使FDTD模拟变得很困难。近来相继出现以麦克斯韦方程的国路积分形式建立相应FDTD算法式,FDTD与其他方法(如积分方程法或矩量法)的混合技术,以及媒质参数竹网格平均技术等,均提供了解决这类特殊问题的途径。FDTD法的特点是很易得到被研究体的近场,但不易一次直接得到远场值。80年代初期提出的利用等效原理将频城近场变换为远场是解决这个问题的好方法,近几年又将此技术发展到时域这二种路径给求解散射间题和天线问题提供了强有力的工具。值得提出的是,早期fTD方法中没有计及媒质的色散特性,即假定被研究媒质的电参数是与频率无关的。实际上自然界中有很多媒质的电参数具有很强的色散特性,近几年已开始注意研究色散媒质中的FDTD算法,为解决这电磁领域内难题铺平了道路。上述几方面问题的进展有力推动了FDTD技术的发展和应用,使它在解决复杂形体结构和多种媒质并存的一类呵题中占有重要的一席之地。今天,它不仅在电磁散射、电磁兼容预测、生物电磁学中得到卓有成效的应用,而且在天线做波技术、光电子学等的应用中意益受到重视。本书内容包括三部分:第一部分论述了FDTD法基本知识和各种FDTD算法,包括各种坐标系和特殊结构媒质的算法,以及FDTD与其他方法相结合的混合法等;第二部分介绍了FDTD法在电磁学各领域中的应用情况,内容涉及电磁散射微波传输线、天线、电磁榘容预測及生物电磁学范畴;第三部分讨论近期发展的色散媒质的FDTD算祛原理及其应用情况。本书在给出各种应用实例时,多将FDID法数据与理论值或实验数据或其他数值解数据(如矩量法等)进行比较。除早期发表的少数例子误差稍大外,大多数均与相比较的数据吻合很好。从目前水平看,在分析…般散射问题中,数值误差约在L%~3%附近(RCS的误差略大些),而在求谐振器本征值问题中,FDTD数值解与理论值误差低于百分之,某些情况能小于千分之一,这个精度是很喜人的。可以无夸张地说,FDTD法与其他数值解从精度上讲是可以媲美的,有的则有胜过。加之FDTD法得到的是时域解,通过傅氏变换可得到频域解。即它具有次时域计算代替频域上逐点计算的潜力。这些均L表示FDTD法具有较明显的优势。本书是作者尝试将已发表在不同场合不同时间的有关资料经整理推演、加工编写成专著。内容取材上亦包括作者及同事们近几年在这方面开展的工作结果。编写本书的目的是希望能起到抛砖引玉的效果。希给初学者提供…个入门途径,给从事这方面工作的同行们提供较系统的参考资料,以便更好地促进FDTD技术的发展和更进一步拓宽它的应用。由于作者才疏学浅,加上时间关系,错误和不足在所难免,上述目的恣难如愿敬请各位专家学者和读者多提供宝贵意见。在本书确立大纲的过程中,得到北京理工大学张德齐教授和楼仁海教授、西安交通大学汪文秉教授的帮助,汪文秉教授对内容安排提出了贵意见。要特别提到的是,在本书编写过程中得到中国科学技术大学旅美陈金元博士的大力支持和帮助陈博士及时寄来最新研究资料(见§7.6以充实本书内容。书稿完稿后,张德齐教授通阅了全稿,并提出宝贵意见国防工业出版社在本书出版过程中给予很多帮助,作者在此对他们表示衷心的感谢作者t993年8月于北京内容简介本书重点介绍」时域有限差分(FDTD)法的基本知识及其在电磁学各个领域内的应用。全书包括二部分(共八章),第一部分论述了FDTD法的基本知识(第…章)和各种FDTD算法,包括各种坐标和特殊结构媒质中FDTD算法及混合算法等(第二章);第二部分介绍FDTD法的爷种应用,内容涉及电磁散射(第三章〉微波传输线和谐振腔(第四章)、天线(第五章)、电磁兼容预测第六章)生物电磁学(第七章)等领域;第三部分介绍近期发展的色散媒质屮FDTD算法原及其应用情祝等(第八章〕。木书可供从事时域计算电磁学理论和应用妍究的人员参考,亦可供有关专业教师、研究生及商年级大学生作选修和参考用书目·录第一章时域有根差分法基本知识1.1支克斯韦方程1)].2FTD基本方程■h吾早4中■暑h音h鲁↓ψ中4山■■骨日◆p4白(生)1.3解的稳定性“……““〔l1)1.4边界条件…(13)1.5激励派的类型和设置……………………………(22)816误差分析………*………(29)§1.7近场一远场变换山中■冒↓d4白■■■e40)氵1.8FDTD数值解步骤…………(45〕参考文献■··■跏■·幽自嚞ψ■■·自·■甲血幽b中■●鲁歌●■甲晉『甲●■目■■46第二章FDTD算法变异48)82.1一般曲线坐标系的FDTD算法4甲●鲁ψψ■“ψ晕P山血曾■■■省口_P■口(48)§2.2正交曲线坐标系的PDTD算法(58}2.3非均匀网格尺寸的FDTD算法…(69)2.4细薄结构媒质的FTD算法……………*………(80)2.5FDTD瞬态积分方程的混合算法:(95§2.6FDTD矩量法时混合算法…………………*………(101)参考文献…………………………………………(105)第三章在电磁散射问题中的应用聊司自■电■■悬■■··ψb■■t最聊10883.1二维散射体■■画■·■唱口■■』烟·■口甲■唱■■即■■■口·吾■昌■■■■即■■■晶』h画p■■■昌〔108§3.2三维敢射体……………(114)3.3RCS计算……〔121)§3.4散射体的时域综合……………………**……(134)参考文献(143)第阿章在徽波传输线和谐振腔中的应用…………………(141徵带和共面传输线咖自b·山山山啬■■山■■ψ·;跏·■■“■士鲁■b■口■■■动●咖【41§4.2徼带不均匀性和徼带元件●日日鲁■日聊聊昏目申聊■与;自语↓ψ■ψ口一·↓c自ψb53)氵4.3波导传贛线元件……………………………………(63)8.4谐振腔的本征值……4…(j72)4.5谐振腔的e值(I名1参考文献…………………………………………(185第五章在天线问题中的应用·……(!8?)§5.1圆柱形单极天线………4■·↓■自·h■■■■■■■■甲4■■■▲187)5.2波导口和喇明线………………………………………(196)§5.3徽带贻片天线200)§5.4天线互朝的计算…ra……(210)参考文献1■幽昏p■■◆(215第六章在电磁兼容预测中的应用…(218§6·]瞬变电驚环境下飞机表面效应………“(216)§6.2EMP对连接有尾气焰导弹体的效应…(22)s63EM场透入导弹导引头的预浏■■■非十(230)6.4飞行体上微带贴片天线的EMP效应……a(233)6.5TEM传导胞腔中不均匀性影响的预测…-4…*4(239参考文献昏■■·聊■●■■■·ψ■山幽■如卓■■ψ卩■■中斷鲁晋■■口自■■导画晋■b山1〔241第七章在生物电磁学中的应用……246§7.1生物组织的电磁特性及人体电磁模型……………"……(246)72平面波照射下人体内的电磁效应号昌◆+卓b4即u(z56)7.3工业加热器对人体的作用…………………………(263)7.4动力电的人体效应…sa…(2687.5高压EMP的生物效.…·…(273)N7.6虾篾电话的人体效应…■■■■■↓鲁号↓個山山……(280)参考文………………………………………(2865第八章色教媒质的FDTD算法日■■d十■T■一一會■■『■■■血288)N8.1离散时域卷积建立FDTD方程……〔288N8.2由德拜方程和频域场到吋域的直接变换建立FDTD方程"sr…:…(295)氵8.3由z变换建立FDTD方程日ψ号■自卓自甲ψ吾■■■日■■■道语晶画『4b即44■(298)4色散媒质的吸收边界条件…………………"………(303)8.5(FD)TD法应用举例……(3058.6表面阻抗概念在fDTD法中的应用……(314)s8.了表面阻抗FDT法应用举例………■·■■b■324)参考文献(召30
- 2021-05-06下载
- 积分：1
