pin-(1)
于 2014-12-06 发布
文件大小:424KB
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代码说明：
Characteristic Analysis of p-i-n Thin-Film Phototransistor Using Device Simulation.The optoelectronic characteristic of a p-i-n thin-film phototransistor is analyzed by comparing an actual device with device simulation. It is found using the actual device that the detected current is maximized when the control voltage is equal to the applied voltage.
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