DDE-with-matlab-program-

说明：  BP神经网络实线0——9数字识别 MATLAB(BP neural network solid lines 0- 9 Digital Identification MATLAB)

gaotv5,一个著名的遗传算法工具箱.安装在任意目录(gaotv5, a well-known genetic algorithm toolbox. Installed in any directory)

direct sequence spread spectrum technology for secure data tranfer

一个MATLAB gui实例，轻松就学会了MATLAB gui，我们一起进步！(A MATLAB gui instance, easily learned MATLAB gui, we progress together!)

ar模型aic准则,希望对大家有所帮助。(AR model AIC criterion)

为孤立特征值的代数方程摄动法的编程例子，能用于一般的教学或科研使用(It can be used for the education of matrix-perturbation and research.)

Nonlinear model predictive control (planning) for level control in a surge tank

求解整数规划的问题可以解决一般的整数规划模型的解而且效率比较高！在matlab下调试通过(Solving integer programming problems can be solved in the general solution of integer programming model and more efficient! Adopted under the debugger in matlab)

为了研究系统在受到外界干扰情况下的性能，特别从输入端加入了噪声干扰，仿真效果明显。(this progrmme is set to test the system performance .)

基于MATLAB利用Particle-in-cell模型,对梯形管内壁等离子体离子注入过程,进行了二维数值模拟.计算结果表明在中心电极附近出现了“阳极鞘层”,该鞘层内部不存在离子,而且在鞘层边缘离子密度最高.在上下管壁上的离子注入剂量呈现“m”形分布.通过对注入过程中等离子体密度分布和不同时间段管壁不同位置离子注入剂量的跟踪,发现“阳极鞘层”扩展行为是导致“m”形分布的原因.由于梯形管形状的不对称性,“阳极鞘层”的边缘向梯形长底方向扩展较快.在注入初始时刻离子注入的能量很低,随着时间延长离子能量逐渐升高,这是由离子初始位置决定的.可见梯形管自身形状决定了鞘层形状和最终的离子注入能量和剂量分布.(Based on MATLAB use Particle-in-cell model, the trapezoidal pipe wall plasma ion implantation process, the numerical simulation of two-dimensional calculation results show that in the vicinity of the center electrode to a "anode sheath," which does not exist inside the plasma sheath, and the highest in the sheath edge ion density ion implantation dose showing the upper and lower walls of the "m"-shaped distribution through the process of injecting the plasma density distribution and the wall at different locations in different time periods ion implantation dose tracking, found that "anode sheath "extension behavior is leading to" m "-shaped distribution of the reasons due to the asymmetry of the trapezoidal shape of the tube," Edge anode sheath "extension to the end of a long trapezoid direction quickly in the initial moment of implantation energy ion implantation is low ion energy with time gradually increased, which is determined by the initial position of the ion. visible trapezoida)