matlab

Yule—Walker方程构造信号的AR模型,Burg递推算法计算不同阶数的预测器系数(Yule-Walker equation for constructing the signal of AR model, Burg recursive algorithm to calculate the number of different order predictor coefficient)

光栅尺，随意改变光栅尺的长度，光栅缝宽随着光栅尺长度的变化而变化(Grating, grating arbitrarily change the length of the grating with the grating length slit width varies)

说明：  Matlab与有限元程序设计的一篇文献，里面有具体的网格剖分程序(Matlab and design a finite element program literature, there are specific procedures mesh)

说明：  遗传算法的实数编码MATLAB程序，不是工具箱，有助于理解遗传算法的编程实现(Genetic algorithm written by maltab)

经典的50例电机仿真，包括磁路与变压器篇、直流电机篇、异步电机篇、同步电机篇等(50 cases of classic motor simulation, including circuit and transformer articles, articles DC motor, induction motor papers, articles, such as synchronous motor)

hi matlab code for the pdf

说明：  改进神经网络程序，可处理信号，提取谐波频率和幅值，检测精度较高(Improved neural network program, which can process signals, extract harmonic frequency and amplitude, and has high detection accuracy)

基于MATLAB的8ASK数字调制系统设计的程序设计,别人编写的.(MATLAB-based digital modulation system design 8ASK the program design, others prepared.)

The effects of multipath include constructive and destructive interference, and phase shifting of the signal. This causes Rayleigh fading, named after Lord Rayleigh. The standard statistical model of this gives a distribution known as the Rayleigh distribution. Rayleigh fading with a strong line of sight content is said to have a Rician distribution, or to be Rician fading.

说明：  若锗中含有一定数量的杂质元素Sb，试根据要求分析杂质浓度与电离度以及电离温度之间的关系： （1）当Sb浓度分别为 和 时，计算杂质99％，90％和50％电离时的温度各为多少？ （2）根据一定杂质类型和杂质浓度，画出电离度和温度的关系图线，并确定半导体处于强电离区（电离度>90％）的温度范围。 设计要求：（1）具有友好输入输出界面； （2）调整输入数据，得出相应结果，并进行分析。 (If the germanium containing a certain number of impurity elements Sb, test analysis in accordance with the requirements of impurity concentration and ionization degree, as well as the relationship between the ionization temperature: (1) When the Sb concentration and time were calculated 99 percent of impurities, 90 and 50 ionization When the temperature of each number? (2) according to certain types of impurities and impurity concentration, ionization degree and temperature to draw the relationship between the graph lines, and to determine the semiconductor in a strong ionization zone (ionization degree)