extended-kalman-filter

关于自相关函数的载波估计，以归一化估计标准差为性能量度源码(With regard to the autocorrelation function of the carrier estimated that, with the normalized standard deviation of the performance measure is estimated source)

乒乓球弹跳模型主程序，能够在仿真过程中动态显示球的坠落和反弹过程，在仿真过程结束后输出小球位移和速度的变化曲线！(Table bouncing model main program that can display dynamic simulation of the falling ball and the rebound process, after the end of the simulation output and speed of the ball displacement curve!)

在matlab环境下旅行商问题的遗传算法(In the traveling salesman problem matlab environment genetic algorithm)

电力电子电路matlab仿真程序，丰富实用，即学即会。(Matlab power electronic circuit simulation program, rich in practical, that will learn.)

MMSE Detection 2x2 with BER Plot

PLS分类，主要用于多数类与少数类的分类。(pls classifier)

MATLAB MLP Backprop Code

说明：  输入一个样值电平,对它进行13折线编码,画出编码波形.(Enter a sample value level, its 13-line code, draw the waveform coding.)

first derivative for edge detection

基于MATLAB利用Particle-in-cell模型,对梯形管内壁等离子体离子注入过程,进行了二维数值模拟.计算结果表明在中心电极附近出现了“阳极鞘层”,该鞘层内部不存在离子,而且在鞘层边缘离子密度最高.在上下管壁上的离子注入剂量呈现“m”形分布.通过对注入过程中等离子体密度分布和不同时间段管壁不同位置离子注入剂量的跟踪,发现“阳极鞘层”扩展行为是导致“m”形分布的原因.由于梯形管形状的不对称性,“阳极鞘层”的边缘向梯形长底方向扩展较快.在注入初始时刻离子注入的能量很低,随着时间延长离子能量逐渐升高,这是由离子初始位置决定的.可见梯形管自身形状决定了鞘层形状和最终的离子注入能量和剂量分布.(Based on MATLAB use Particle-in-cell model, the trapezoidal pipe wall plasma ion implantation process, the numerical simulation of two-dimensional calculation results show that in the vicinity of the center electrode to a "anode sheath," which does not exist inside the plasma sheath, and the highest in the sheath edge ion density ion implantation dose showing the upper and lower walls of the "m"-shaped distribution through the process of injecting the plasma density distribution and the wall at different locations in different time periods ion implantation dose tracking, found that "anode sheath "extension behavior is leading to" m "-shaped distribution of the reasons due to the asymmetry of the trapezoidal shape of the tube," Edge anode sheath "extension to the end of a long trapezoid direction quickly in the initial moment of implantation energy ion implantation is low ion energy with time gradually increased, which is determined by the initial position of the ion. visible trapezoida)